公开(公告)号：US20230220551A1

公开(公告)日：2023-07-13

申请号：US18119406

申请日：2023-03-09

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit B. MALLICK

IPC: C23C16/503 ,  C23C16/458 ,  H01L21/02 ,  C23C16/52 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/503 ,  C23C16/4586 ,  H01L21/02274 ,  C23C16/52 ,  C23C16/505 ,  C23C16/45502 ,  H01L21/02521 ,  H01L21/02115

Abstract: Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process. In particular, the methods described herein utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods described herein provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

公开(公告)号：US20230154726A1

公开(公告)日：2023-05-18

申请号：US18155424

申请日：2023-01-17

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Tza-Jing GUNG ,  Samuel E. GOTTHEIM ,  Timothy Joseph FRANKLIN ,  Pramit MANNA ,  Eswaranand VENKATASUBRAMANIAN ,  Edward HAYWOOD ,  Stephen C. GARNER ,  Adam FISCHBACH

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/02

CPC classification number: H01J37/32082 ,  C23C16/505 ,  C23C16/455 ,  H01L21/3065 ,  H01J37/32623 ,  H01L21/02274 ,  H01J37/32715

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film. In one embodiment, a plurality of retaining brackets is disposed in a rotational magnetic housing of the magnetic housing systems. Each retaining bracket of the plurality of retaining brackets is disposed in the rotational magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets has a plurality of magnets removably disposed therein. The plurality of magnets is configured to travel in a circular path when the rotational magnetic housing is rotated around the round central opening.

公开(公告)号：US20230139431A1

公开(公告)日：2023-05-04

申请号：US18088889

申请日：2022-12-27

Applicant: Applied Materials, Inc.

Inventor： Samuel E. GOTTHEIM ,  Abhijit B. MALLICK ,  Pramit MANNA ,  Eswaranand VENKATASUBRAMANIAN ,  Timothy Joseph FRANKLIN ,  Edward HAYWOOD ,  Stephen C. GARNER ,  Adam FISCHBACH

IPC: H01J37/32 ,  C23C16/509

Abstract: Embodiments described herein provide magnetic and electromagnetic housing systems and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film. In one embodiment, the method includes rotation of the rotational magnetic housing about a center axis of the process volume to create dynamic magnetic fields. The magnetic fields modify the shape of the plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.

公开(公告)号：US20210407801A1

公开(公告)日：2021-12-30

申请号：US16915110

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Pramit MANNA ,  Abhijit Basu MALLICK

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/458 ,  C23C16/27

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide techniques for depositing high-density films for patterning applications. In one or more embodiments, a method of processing a substrate is provided and includes flowing a deposition gas containing a hydrocarbon compound and a dopant compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck, where the processing volume is maintained at a pressure of about 0.5 mTorr to about 10 Torr. The method also includes generating a plasma at the substrate by applying a first RF bias to the electrostatic chuck to deposit a doped diamond-like carbon film on the substrate, where the doped diamond-like carbon film has a density of greater than 2 g/cc and a stress of less than −500 MPa.

公开(公告)号：US20200370177A1

公开(公告)日：2020-11-26

申请号：US16876845

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Timothy Joseph FRANKLIN ,  Adam FISCHBACH ,  Edward HAYWOOD ,  Abhijit B. MALLICK ,  Pramit MANNA ,  Carlaton WONG ,  Stephen C. GARNER ,  Eswaranand VENKATASUBRAMANIAN

IPC: C23C16/458 ,  H01J37/32 ,  C23C16/46 ,  C23C16/455 ,  C23C16/50

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

公开(公告)号：US20250046610A1

公开(公告)日：2025-02-06

申请号：US18364249

申请日：2023-08-02

Applicant: Applied Materials, Inc.

Inventor： Jialiang WANG ,  Guangyan ZHONG ,  Soonil LEE ,  Eswaranand VENKATASUBRAMANIAN ,  Abhijit B. MALLICK

IPC: H01L21/033 ,  C23C16/27 ,  C23C16/507 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311

Abstract: The present disclosure provides a method of processing a substrate. The method includes flowing a deposition gas comprising a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. A plasma is generated at the substrate by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film is doped with a metal dopant to form a doped diamond-like carbon film. The metal dopant is thermally annealed to the doped diamond-like carbon film.

公开(公告)号：US20250046599A1

公开(公告)日：2025-02-06

申请号：US18364260

申请日：2023-08-02

Applicant: Applied Materials, Inc.

Inventor： Jialiang WANG ,  Soonil LEE ,  Eswaranand VENKATASUBRAMANIAN ,  Abhijit B. MALLICK

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/458 ,  C23C16/509 ,  C23C16/56 ,  H01J37/32 ,  H01L21/311

Abstract: The present disclosure provides a method. The method includes positioning a substrate on an electrostatic chuck in a processing volume of a processing chamber. A plasma is generated at the substrate by applying a RF bias to the electrostatic chuck. A first layer of a diamond-like carbon film is deposited in an opening of the substrate by flowing a first deposition gas comprising a hydrocarbon compound into the processing volume. The first layer is etched to remove a portion of the first layer. A second layer of the diamond-like carbon film is deposited in the opening to fill an upper portion of the opening by flowing a second deposition gas into the processing volume.

公开(公告)号：US20240087894A1

公开(公告)日：2024-03-14

申请号：US18507328

申请日：2023-11-13

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Samuel E. GOTTHEIM ,  Pramit MANNA ,  Abhijit B. MALLICK

IPC: H01L21/033 ,  C23C16/27 ,  C23C16/509 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/0337 ,  C23C16/272 ,  C23C16/509 ,  H01J37/32724 ,  H01L21/0332 ,  H01L21/6833 ,  H01J37/32082 ,  H01L21/31105

Abstract: Embodiments of the present disclosure generally relate to deposition of high transparency, high-density carbon films for patterning applications. In one embodiment, a method of forming a carbon film on a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a process chamber having a substrate positioned on an electrostatic chuck, wherein the substrate is maintained at a temperature of about −10° C. to about 20° C. and a chamber pressure of about 0.5 mTorr to about 10 Torr, and generating a plasma by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film containing about 60% or greater hybridized sp3 atoms on the substrate, wherein the first RF bias is provided at a power of about 1800 Watts to about 2200 Watts and at a frequency of about 40 MHz to about 162 MHz.

公开(公告)号：US20210384015A1

公开(公告)日：2021-12-09

申请号：US16896575

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Huiyuan WANG ,  Rick KUSTRA ,  Kaushik ALAYAVALLI ,  Eswaranand VENKATASUBRAMANIAN ,  Jay D. PINSON, II ,  Abhijit B. MALLICK

IPC: H01J37/32 ,  B08B5/00 ,  B08B9/08

Abstract: Embodiments of the present disclosure generally relate to clean methods for processing chambers, and more specifically relate to plasma clean methods for removing carbon films from surfaces within the processing chamber. A method for cleaning includes introducing a cleaning gas into a processing region within a processing chamber, where interior surfaces of the processing chamber have a coating containing amorphous carbon. The cleaning gas contains oxygen gas and a noble gas. The method also includes generating an ion coupled plasma (ICP) from the cleaning gas within an upper portion of the processing region and generating a bias across a substrate support in a lower portion of the processing region. The method further includes exposing the amorphous carbon to atomic oxygen ions produced from the oxygen gas and the ICP and removing the amorphous carbon from the interior surfaces with the atomic oxygen ions during a cleaning process.

公开(公告)号：US20180358222A1

公开(公告)日：2018-12-13

申请号：US15979842

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Samuel E. GOTTHEIM ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOZHIZAWA ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/683 ,  H01J37/32 ,  C23C16/27 ,  C23C16/505 ,  C23C16/56 ,  G03F7/20

CPC classification number: H01L21/02115 ,  C23C16/272 ,  C23C16/505 ,  C23C16/56 ,  G03F7/70033 ,  H01J37/32082 ,  H01J37/32715 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/6831 ,  H01L27/11551 ,  H01L27/11578

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.