公开(公告)号：US20230008986A1

公开(公告)日：2023-01-12

申请号：US17861395

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Prahallad Iyengar ,  Sanjeev Baluja ,  Kartik Shah ,  Chaowei Wang ,  Janisht Golcha ,  Eric J. Hoffmann ,  Joseph AuBuchon ,  Ashutosh Agarwal ,  Lin Sun ,  Cong Trinh

IPC: C23C16/455

Abstract: Gas injector with a vacuum channel having an inlet opening in the front face and an outlet opening in the back face of the injector are described. The vacuum channel comprises a first leg extending a first length from the inlet opening in the front face at a first angle relative to the front face and a second leg extending a second length from the first leg to the outlet opening in the back face at a second angle relative to the front face. Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

公开(公告)号：US20220389571A1

公开(公告)日：2022-12-08

申请号：US17825229

申请日：2022-05-26

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Philip A. Kraus ,  Thai Cheng Chua ,  James Canducci ,  Hanhong Chen ,  Zhejun Zhang ,  Hao Zhang ,  Xiankai Yu

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/04 ,  H01L21/02 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

Abstract: Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam and partially etching the film in the same processing chamber. Methods and apparatus allow for the same hardware to be used for PEALD deposition of a film as well as plasma etch of the film.

公开(公告)号：US11520358B2

公开(公告)日：2022-12-06

申请号：US17521469

申请日：2021-11-08

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Ashley M. Okada ,  Alexander Fernandez ,  Ming Xu ,  Marcel E. Josephson ,  Sushant Suresh Koshti ,  Kenneth Le ,  Kevin M. Brashear

IPC: G05D7/06 ,  G01F25/00 ,  G01F25/17

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

公开(公告)号：US20220327262A1

公开(公告)日：2022-10-13

申请号：US17224545

申请日：2021-04-07

Applicant: Applied Materials, Inc.

Inventor： Dhritiman Subha Kashyap ,  Chaowei Wang ,  Kartik Shah ,  Kevin Griffin ,  Karthik Ramanathan ,  Hanhong Chen ,  Joseph AuBuchon ,  Sanjeev Baluja

IPC: G06F30/27 ,  G06F30/10

Abstract: Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.

公开(公告)号：US20220316061A1

公开(公告)日：2022-10-06

申请号：US17845191

申请日：2022-06-21

Applicant: Applied Materials, Inc.

Inventor： Kevin Griffin ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Mario D. Silvetti ,  Hari Ponnekanti

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

公开(公告)号：US20200090978A1

公开(公告)日：2020-03-19

申请号：US16664487

申请日：2019-10-25

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

公开(公告)号：US20250087477A1

公开(公告)日：2025-03-13

申请号：US18367136

申请日：2023-09-12

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Kenneth S. Collins ,  Hanhong Chen ,  Philip A. Kraus ,  Michael Rice

IPC: H01L21/02

Abstract: Methods of depositing improved quality silicon nitride (SixNy) films are disclosed. Exemplary methods include exposing a semiconductor substrate in a semiconductor processing chamber to a silicon-containing precursor, to a first plasma produced from a first gas mixture comprising helium (He) and nitrogen (N2), the first gas mixture comprising a ratio of helium:nitrogen in a range of from 20:1 to 1000:1, and exposing the semiconductor substrate to a second plasma produced from a second gas mixture comprising helium (He), nitrogen (N2), and ammonia (NH3).

公开(公告)号：US20250037978A1

公开(公告)日：2025-01-30

申请号：US18225454

申请日：2023-07-24

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Chaowei Wang ,  Kevin Griffin ,  Kenneth Brian Doering ,  Hanhong Chen ,  Joseph AuBuchon

IPC: H01J37/32 ,  H01L21/67

Abstract: Gas distribution assemblies for semiconductor devices are described. The gas distribution assemblies include a backplate, a faceplate, a counterbored hole, and at least one orifice. The at least one orifice includes, for example, at least one straight orifice, or at least two angled orifices. Some embodiments of the gas distribution assemblies provide for reduced plasma damage in a processing chamber. Some embodiments of the gas distribution assemblies provide for reduced jetting on a substrate in a processing chamber. Methods of reducing plasma damage in gas distribution assemblies are also described.

公开(公告)号：US12060638B2

公开(公告)日：2024-08-13

申请号：US17120186

申请日：2020-12-13

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Ashutosh Agarwal

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/4412 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/68764

Abstract: Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

公开(公告)号：US11978625B2

公开(公告)日：2024-05-07

申请号：US17503599

申请日：2021-10-18

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0228 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0234 ,  H01L21/31111 ,  H01J2237/332 ,  H01J2237/334

Abstract: Embodiments of the disclosure include methods of forming a film comprising conformally depositing a first film on a substrate; treating the first film with a first plasma to form a second film; treating the second film with a second plasma to form a third film; and selectively removing the first film, a portion of the second film, and the third film.