公开(公告)号：US20210343550A1

公开(公告)日：2021-11-04

申请号：US16865860

申请日：2020-05-04

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/02

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.

公开(公告)号：US20200118790A1

公开(公告)日：2020-04-16

申请号：US16156434

申请日：2018-10-10

Applicant: APPLIED Materials, Inc.

Inventor： Tsung-Liang Chen ,  Kevin R. Anglin ,  Simon Ruffell

IPC: H01J37/244 ,  H01J37/20

Abstract: A system for determining various parameters of an ion beam is disclosed. A test workpiece may be modified to incorporate a detection pattern. The detection pattern may be configured to measure the height of the ion beam, the uniformity of the ion beam, or the central angle of the ion beam. In certain embodiments, the amount of current striking the detection pattern may be measured using an optical emission spectrometer (OES) system. In other embodiments, a power supply used to bias the workpiece may be used to measure the amount of current striking the detection pattern. Alternative, the detection patterns may be incorporated into the workpiece holder.