公开(公告)号：US20230377879A1

公开(公告)日：2023-11-23

申请号：US17747978

申请日：2022-05-18

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Elizabeth Mao ,  Tianyi Huang ,  Tengzhou Ma ,  Chi-Chou Lin ,  Yixiong Yang

IPC: H01L21/02

CPC classification number: H01L21/02362 ,  H01L21/02153 ,  H01L21/02181

Abstract: Embodiments of the present disclosure are related to methods of preventing aluminum diffusion in a metal gate stack (e.g., high-κ metal gate (HKMG) stacks and nMOS FET metal gate stacks). Some embodiments relate to a barrier layer for preventing aluminum diffusion into high-κ metal oxide layers. The barrier layer described herein is configured to reduce threshold voltage (Vt) shift and reduce leakage in the metal gate stacks. Additional embodiments relate to methods of forming a metal gate stack having the barrier layer described herein. The barrier layer may include one or more of amorphous silicon (a-Si), titanium silicon nitride (TiSiN), tantalum nitride (TaN), or titanium tantalum nitride (TiTaN).

公开(公告)号：US20230295804A1

公开(公告)日：2023-09-21

申请号：US18142236

申请日：2023-05-02

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Geetika Bajaj ,  Yixiong Yang ,  Seshadri Ganguli ,  Tuerxun Ailihumaer ,  Yogesh Sharma ,  Tianyi Huang

IPC: C23C16/455 ,  C08G77/26 ,  C08G77/50 ,  C23C16/34 ,  C23C16/46 ,  C23C16/32 ,  H01L21/28

CPC classification number: C23C16/45553 ,  C08G77/26 ,  C08G77/50 ,  C23C16/34 ,  C23C16/466 ,  C23C16/45502 ,  C23C16/32 ,  H01L21/28088

Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III):




wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).