公开(公告)号：US11289374B2

公开(公告)日：2022-03-29

申请号：US16467669

申请日：2017-11-29

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Xinliang Lu ,  Srinivas Gandikota ,  Yong Wu ,  Susmit Singha Roy ,  Chia Cheng Chin

IPC: H01L21/76 ,  H01L21/768 ,  C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/285 ,  H01L21/687 ,  H01L23/532

Abstract: Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.

公开(公告)号：US09881787B2

公开(公告)日：2018-01-30

申请号：US15184521

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Benjamin Schmiege ,  Xuesong Lu ,  Juno Yu-Ting Huang ,  Yu Lei ,  Yung-Hsin Lee ,  Srinivas Gandikota ,  Rajkumar Jakkaraju ,  Chikuang Charles Wang ,  Ghazal Saheli ,  Benjamin C. Wang ,  Xinliang Lu ,  Pingyan Lei

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.

公开(公告)号：US09145612B2

公开(公告)日：2015-09-29

申请号：US13930194

申请日：2013-06-28

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Xinliang Lu ,  Shih Chung Chen ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  David Thompson ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Xinyu Fu ,  Yu Lei

IPC: C23C18/00 ,  C23C16/08 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C18/00 ,  C23C16/08 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45553

Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

Abstract translation: 提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。 某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。 其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。