Silicon photonics device for LIDAR sensor and method for fabrication

    公开(公告)号:US11835765B2

    公开(公告)日:2023-12-05

    申请号:US18051337

    申请日:2022-10-31

    Abstract: A structure of a silicon photonics device for LIDAR includes a first insulating structure and a second insulating structure disposed above one or more etched silicon structures overlying a substrate member. A metal layer is disposed above the first insulating structure without a prior deposition of a diffusion barrier and adhesion layer. A thin insulating structure is disposed above the second insulating structure. A first configuration of the metal layer, the first insulating structure and the one or more etched silicon structures forms a free-space coupler. A second configuration of the thin insulating structure above the second insulating structure forms an edge coupler.

    LIDAR with switchable local oscillator signals

    公开(公告)号:US12259477B2

    公开(公告)日:2025-03-25

    申请号:US18160817

    申请日:2023-01-27

    Abstract: A light detection and ranging (LIDAR) sensor system includes a plurality of LIDAR pixels and a local oscillator module. The local oscillator module is coupled to the plurality of LIDAR pixels. The local oscillator module includes a first local oscillator input configured to receive a first local oscillator signal and a second local oscillator input configured to receive a second local oscillator signal. The local oscillator module is configured to provide the first local oscillator signal or the second local oscillator signal to a first LIDAR pixel of the plurality of LIDAR pixels.

    LIDAR sensor system including integrated modulator

    公开(公告)号:US12222447B1

    公开(公告)日:2025-02-11

    申请号:US18516646

    申请日:2023-11-21

    Abstract: A light detection and ranging (LIDAR) system for a vehicle can include: a light source configured to output a beam; a photonics integrated circuit (PIC) including a semiconductor die, the semiconductor die comprising a substrate having two or more semiconductor devices formed on the substrate, the two or more semiconductor devices configured to receive the beam from the light source and modify the beam and at least one photonics die coupled to the semiconductor die, the at least one photonics die comprising at least a transmitter configured to receive the beam from the semiconductor die; and one or more optics configured to receive the beam from the transmitter and emit the beam towards an object in an environment of the vehicle.

    Silicon Photonics Device for LIDAR Sensor and Method for Fabrication

    公开(公告)号:US20230161105A1

    公开(公告)日:2023-05-25

    申请号:US18051337

    申请日:2022-10-31

    CPC classification number: G02B6/136 G01S7/4816 G02B2006/12107

    Abstract: A structure of a silicon photonics device for LIDAR includes a first insulating structure and a second insulating structure disposed above one or more etched silicon structures overlying a substrate member. A metal layer is disposed above the first insulating structure without a prior deposition of a diffusion barrier and adhesion layer. A thin insulating structure is disposed above the second insulating structure. A first configuration of the metal layer, the first insulating structure and the one or more etched silicon structures forms a free-space coupler. A second configuration of the thin insulating structure above the second insulating structure forms an edge coupler.

    Silicon Photonics Device for LIDAR Sensor and Method for Fabrication

    公开(公告)号:US20230161006A1

    公开(公告)日:2023-05-25

    申请号:US17853674

    申请日:2022-06-29

    CPC classification number: G01S7/4813 G01S17/931

    Abstract: A structure of a silicon photonics device for LIDAR includes a first insulating structure and a second insulating structure disposed above one or more etched silicon structures overlying a substrate member. A metal layer is disposed above the first insulating structure without a prior deposition of a diffusion barrier and adhesion layer. A thin insulating structure is disposed above the second insulating structure. A first configuration of the metal layer, the first insulating structure and the one or more etched silicon structures forms a free-space coupler. A second configuration of the thin insulating structure above the second insulating structure forms an edge coupler.

    Silicon-Assisted Packaging of High Power Integrated SOA Array

    公开(公告)号:US20250118948A1

    公开(公告)日:2025-04-10

    申请号:US18985629

    申请日:2024-12-18

    Abstract: A photonic integrated circuit (PIC) assembly comprising a semiconductor optical amplifier (SOA) array and a U-turn chip. The SOA array includes an input SOA and a plurality of SOAs. The input SOA and the plurality of SOAs are arranged parallel to one another. The U-turn chip includes an optical splitter and a waveguide assembly. The optical splitter is configured to receive amplified input light propagating in a first direction from the input SOA, and divide the amplified light into beams. The waveguide assembly guides the beams to a corresponding SOA of the plurality of SOAs, and adjusts a direction of prorogation of each of the guided beams to be substantially parallel to a second direction that is substantially opposite the first direction.

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