公开(公告)号：US20060275711A1

公开(公告)日：2006-12-07

申请号：US11446111

申请日：2006-06-05

Applicant: Chien-Chung Fu ,  Heng-Chi Huang

Inventor： Chien-Chung Fu ,  Heng-Chi Huang

IPC: G03F7/20

CPC classification number: G03F7/0017 ,  G03F7/2002

Abstract: A method of manufacturing a LIGA mold by backside exposure includes the steps of: disposing a mask layer at a side of a first substrate, wherein the first substrate is transparent to a predetermined light source and has a front side and a backside; forming a photoresist layer on the front side of the first substrate; providing the predetermined light source to illuminate the backside of the first substrate so as to expose the photoresist layer to form an exposed portion and an unexposed portion; removing the unexposed portion to form a patterned structure on the photoresist layer; forming a metal layer on the patterned structure of the photoresist layer and the first substrate; and removing the photoresist layer and the first substrate to remain the metal layer as the LIGA mold, which is good in a de-molding procedure of a hot embossing process.

Abstract translation: 通过背面曝光制造LIGA模具的方法包括以下步骤：在第一衬底的侧面设置掩模层，其中第一衬底对于预定光源是透明的，并且具有正面和背面; 在所述第一基板的前侧形成光致抗蚀剂层; 提供所述预定光源以照亮所述第一基板的背面，以暴露所述光致抗蚀剂层以形成暴露部分和未曝光部分; 去除未曝光部分以在光致抗蚀剂层上形成图案化结构; 在所述光致抗蚀剂层和所述第一基板的图案化结构上形成金属层; 并且除去光致抗蚀剂层和第一基板以保留金属层作为LIGA模具，其在热压花加工的脱模过程中是良好的。

公开(公告)号：US06809028B2

公开(公告)日：2004-10-26

申请号：US10282386

申请日：2002-10-29

Applicant: Chao-Cheng Chen ,  Chien-Chung Fu

Inventor： Chao-Cheng Chen ,  Chien-Chung Fu

IPC: H01L214763

CPC classification number: H01L21/76801 ,  H01L21/31056 ,  H01L21/76807

Abstract: An improved and new process for fabricating dual damascene copper, in which trench/via liner removal from porous low-k dielectric, is performed using a new RIE chemistry of CF4/H2, to etch SiN and SiC liners. Prior to the new process, convention liner etching produced the following deleterious results: a) Cu re-deposition by sputtering, b) polymer deposits, and c) surface roughening of the porous low-k IMD dielectric. Process details are: CF4/H2 based with approximate gas flow ratios of greater than 10 to 1, hydrogen to carbon tetra-fluoride. A nominal flow ratio of 300 to 20, hydrogen to carbon tetra-fluoride, or 15 to 1, was developed.

公开(公告)号：US07947430B2

公开(公告)日：2011-05-24

申请号：US12007018

申请日：2008-01-04

Applicant: Chien-Chung Fu ,  Heng-Chi Huang ,  Wen-Cheng Yang

Inventor： Chien-Chung Fu ,  Heng-Chi Huang ,  Wen-Cheng Yang

IPC: G03F7/20

CPC classification number: G03F7/2032

Abstract: A method of forming 3D micro structures with high aspect ratios includes the steps of: disposing a mask, which has a plurality of through holes having at least two different sizes, on a substrate to expose the substrate through the through holes; forming a negative photoresist layer on the mask and the substrate; providing a light source to illuminate the negative photoresist layer through the substrate and the through holes of the mask so as to form a plurality of exposed portions and an unexposed portion; and removing the unexposed portion and leaving the exposed portions to form a plurality of pillars each having a bottom portion contacting the substrate and a top portion opposite to the bottom portion. A top area of the top portion is slightly smaller than a bottom area of the bottom portion, and the pillars are allowed to have at least two different heights.

Abstract translation: 形成具有高纵横比的3D微结构的方法包括以下步骤：在衬底上设置具有至少两个不同尺寸的多个通孔的掩模，以通过通孔露出衬底; 在掩模和基板上形成负性光致抗蚀剂层; 提供光源以通过衬底和掩模的通孔照射负性光致抗蚀剂层，以形成多个暴露部分和未曝光部分; 并且去除未曝光部分并留下暴露部分以形成多个柱体，每个柱体具有接触基板的底部部分和与底部部分相对的顶部部分。 顶部的顶部区域略小于底部的底部区域，并且柱子被允许具有至少两个不同的高度。

公开(公告)号：US07384729B2

公开(公告)日：2008-06-10

申请号：US11446111

申请日：2006-06-05

Applicant: Chien-Chung Fu ,  Heng-Chi Huang

Inventor： Chien-Chung Fu ,  Heng-Chi Huang

IPC: G03F7/20

CPC classification number: G03F7/0017 ,  G03F7/2002

Abstract: A mold manufacturing method includes the steps of: disposing a mask layer on a front side and a backside of a first substrate, wherein the first substrate is transparent to a predetermined light source and the mask layer has a top portion and a bottom portion, which are respectively disposed on the front side and the backside and arranged alternately; forming a photoresist layer on the front side of the first substrate; providing the predetermined light source to illuminate the backside of the first substrate so as to expose the photoresist layer to form an exposed portion and an unexposed portion; and removing the unexposed portion to form a patterned structure having trenches and micro-holes arranged alternately; forming a metal layer on the patterned structure of the photoresist layer and the first substrate; and removing the photoresist layer and the first substrate; to remain the metal layer.

Abstract translation: 一种模具制造方法包括以下步骤：在第一基板的正面和背面设置掩模层，其中第一基板对于预定光源是透明的，并且掩模层具有顶部和底部， 分别设置在前侧和后侧并交替布置; 在所述第一基板的前侧形成光致抗蚀剂层; 提供所述预定光源以照亮所述第一基板的背面，以暴露所述光致抗蚀剂层以形成暴露部分和未曝光部分; 并且去除未曝光部分以形成具有交替布置的沟槽和微孔的图案化结构; 在所述光致抗蚀剂层和所述第一基板的图案化结构上形成金属层; 以及去除所述光致抗蚀剂层和所述第一基板; 保留金属层。

公开(公告)号：US20050106856A1

公开(公告)日：2005-05-19

申请号：US10714304

申请日：2003-11-14

Applicant: Chao-Cheng Chen ,  Chen-Nan Yeh ,  Chien-Chung Fu

Inventor： Chao-Cheng Chen ,  Chen-Nan Yeh ,  Chien-Chung Fu

IPC: H01L21/316 ,  H01L21/768 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/311

CPC classification number: H01L21/76808 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31695

Abstract: A method of forming a dual damascene opening comprising the following steps. A structure having an overlying exposed conductive layer formed thereover is provided. A dielectric layer is formed over the exposed conductive layer. An anti-reflective coating layer is formed over the dielectric layer. The anti-reflective layer and the dielectric layer are etched using a via opening process to form an initial via exposing a portion of the conductive layer. A protective film portion is formed over at least the exposed portion of the conductive layer. The anti-reflective coating layer and the dielectric layer are patterned to reduce the initial via to a reduced via and to form a trench opening substantially centered over the reduced via. The trench opening and the reduced via comprising the dual damascene opening.

Abstract translation: 一种形成双镶嵌开口的方法，包括以下步骤。 提供一种其上形成有上覆的暴露的导电层的结构。 在暴露的导电层上形成电介质层。 在电介质层上形成抗反射涂层。 使用通孔打开工艺蚀刻抗反射层和电介质层，以形成暴露导电层的一部分的初始通孔。 至少在导电层的暴露部分上形成保护膜部分。 将抗反射涂层和电介质层图案化以将初始通孔减小到减小的通孔，并形成基本上位于经过还原通孔的中心的沟槽开口。 沟槽开口和通孔包括双镶嵌开口。

公开(公告)号：US06505520B1

公开(公告)日：2003-01-14

申请号：US09235301

申请日：1999-01-22

Applicant: Chien-Chung Fu ,  Cheng-Kuo Lee ,  Ching-Yi Wu

Inventor： Chien-Chung Fu ,  Cheng-Kuo Lee ,  Ching-Yi Wu

IPC: G01F1708

CPC classification number: G01F1/7084 ,  G01F1/6845 ,  G01F1/7044

Abstract: Disclosed is a method for preparing a thermal pulsed micro flow sensor comprising determining positions to allocate a plurality of thermal sensors along a microchannel, relatively to a heater positioned in said microchannel, and positioning said thermal sensors at the determined positions, respectively. In the invented flow sensor, the distance (Ln) between the thermal sensor (So) nearest to the thermal sensors (Sn) is determined according to the following equation: &Dgr;F=(A*Ln)*{1/Tn−1/(Tn+&Dgr;T)}; wherein &Dgr;F represents accuracy in velocity measurement; A represents cross sectional area of the fluid channel; Tn is flying time and Tn=(A*Ln)/F wherein F represents full scale of measurable velocity of no thermal sensor and n represents number of thermal sensor counting from the most downstream one; and AT represents tolerance of the thermal pulse signals;

Abstract translation: 公开了一种制备热脉冲微流量传感器的方法，包括确定相对于位于所​​述微通道中的加热器沿着微通道分配多个热传感器的位置，以及将所述热传感器分别定位在所确定的位置。 在本发明的流量传感器中，最接近热传感器（Sn）的热传感器（So）之间的距离（Ln）根据以下等式确定：其中DELTAF表示速度测量的精度; A表示流体通道的横截面面积; Tn是飞行时间，Tn =（A * Ln）/ F，其中F表示无热传感器的可测量速度的满刻度，n表示从最下游的热传感器计数的数量; AT表示热脉冲信号的公差;