Abstract:
A semiconductor die package is disclosed. In one embodiment, the die package includes a semiconductor die including a first surface and a second surface, and a leadframe structure having a die attach region and a plurality of leads extending away from the die attach region. The die attach region includes one or more apertures. A molding material is around at least portions of the die attach region of the leadframe structure and the semiconductor die. The molding material is also within the one or more apertures.
Abstract:
Embodiments of the invention are directed to semiconductor die packages. One embodiment of the invention is directed to a semiconductor die package including, (a) a semiconductor die including a first surface and a second surface, (b) a source lead structure including protruding region having a major surface, the source lead structure being coupled to the first surface, (c) a gate lead structure being coupled to the first surface, and (d) a molding material around the source lead structure and the semiconductor die, where the molding material exposes the second surface of the semiconductor die and the major surface of the source lead structure.
Abstract:
A method for processing a semiconductor substrate is disclosed. The method includes providing a mask having an aperture on a semiconductor substrate having a conductive region. An aperture in the mask is disposed over the conductive region. A pre-formed conductive column is placed in the aperture and is bonded to the conductive region.
Abstract:
Semiconductor die packages are disclosed. An exemplary semiconductor die package includes a premolded substrate. The premolded substrate can have a semiconductor die attached to it, and an encapsulating material may be disposed over the semiconductor die.
Abstract:
A multichip module package uses bond wire with plastic resin on one side of a lead frame to package an integrated circuit and flip chip techniques to attach one or more mosfets to the other side of the lead frame. The assembled multichip module 30 has an integrated circuit controller 14 on a central die pad. Wire bonds 16 extend from contact areas on the integrated circuit to outer leads 2.6 of the lead frame 10. On the opposite, lower side of the central die pad, the sources and gates of the mosfets 24, 26 are bump or stud attached to the half etched regions of the lead frame. The drains 36 of the mosfets and the ball contacts 22.1 on the outer leads are soldered to a printed circuit board.
Abstract:
A packaged semiconductor device (a wafer-level chip scale package) containing no UBM between a chip pad and an RDL pattern is described. As well, the device contains only a single non-polymeric insulation layer between the RDL pattern and the solder bump. The single non-polymeric insulation layer does not need high temperature curing processes and so does not induce thermal stresses into the device. As well, manufacturing costs are diminished by eliminating the UBM between the chip pad and the RDL pattern.
Abstract:
Embodiments of the invention are directed to semiconductor die packages. One embodiment of the invention is directed to a semiconductor die package including, (a) a semiconductor die including a first surface and a second surface, (b) a source lead structure including protruding region having a major surface, the source lead structure being coupled to the first surface, (c) a gate lead structure being coupled to the first surface, and (d) a molding material around the source lead structure and the semiconductor die, where the molding material exposes the second surface of the semiconductor die and the major surface of the source lead structure.
Abstract:
A semiconductor die package is disclosed. In one embodiment, the die package includes a semiconductor die including a first surface and a second surface, and a leadframe structure having a die attach region and a plurality of leads extending away from the die attach region. The die attach region includes one or more apertures. A molding material is around at least portions of the die attach region of the leadframe structure and the semiconductor die. The molding material is also within the one or more apertures.
Abstract:
Semiconductor die packages are disclosed. An exemplary semiconductor die package includes a premolded substrate. The premolded substrate can have a semiconductor die attached to it, and an encapsulating material may be disposed over the semiconductor die.
Abstract:
Semiconductor die packages and methods of making them are disclosed. An exemplary package comprises a leadframe having a source lead and a gate lead, and a semiconductor die coupled to the source and gate leads at a first surface of the leadframe. The source lead has a protruding region at a second surface of the leadframe. A molding material is disposed around the semiconductor die, the gate lead, and the source lead such that a surface of the die and a surface of the protruding region are left exposed by the molding material. An exemplary method comprises obtaining the semiconductor die and leadframe, and forming a molding material around at least a portion of the leadframe and die such that a surface of the protruding region is exposed through the molding material.