公开(公告)号：US20140319574A1

公开(公告)日：2014-10-30

申请号：US14330914

申请日：2014-07-14

Applicant: Epistar Corporation

Inventor： Li-Ping JOU ,  Yu-Chen YANG ,  Jui-Hung YEH

IPC: H01L33/36 ,  H01L27/15

CPC classification number: H01L27/156 ,  H01L27/153 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016

Abstract: An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.

Abstract translation: 具有N个发光二极管单元（N≥3）的LED阵列包括永久基板，永久基板上的接合层，接合层上的第二导电层，第二导电层上的第二隔离层，交叉金属 所述第二隔离层上的第一隔离层，所述交叉金属层上的第一隔离层，所述第一隔离层上的导电连接层，所述导电连接层上的外延结构，以及所述外延结构上的第一电极层。 发光二极管单元通过交叉金属层彼此电连接。

公开(公告)号：US20140054631A1

公开(公告)日：2014-02-27

申请号：US14065330

申请日：2013-10-28

Applicant: Epistar Corporation

Inventor： Li-Ping JOU ,  Yu-Chen YANG ,  Jui-Hung YEH

IPC: H01L33/08

CPC classification number: H01L27/156 ,  H01L27/153 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016

Abstract: An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.

Abstract translation: 具有N个发光二极管单元（N> = 3）的LED阵列包括永久基板，永久基板上的接合层，接合层上的第二导电层，第二导电层上的第二隔离层，交叉 第二隔离层上的金属层，交叉金属层上的第一隔离层，第一隔离层上的导电连接层，导电连接层上的外延结构，外延结构上的第一电极层。 发光二极管单元通过交叉金属层彼此电连接。

公开(公告)号：US20170069791A1

公开(公告)日：2017-03-09

申请号：US14847169

申请日：2015-09-08

Applicant: EPISTAR CORPORATION

Inventor： Yu-Chen YANG

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L33/22 ,  H01L33/12 ,  H01L33/20

Abstract: A light-emitting device comprises a transparent substrate and a light-emitting stack formed on a surface of the transparent substrate, wherein the transparent substrate has a substrate thickness satisfying a light-extraction efficiency of the light-emitting device decreased by no more than 0.1% if the substrate thickness is decreased by 30 μm.

Abstract translation: 发光装置包括透明基板和形成在透明基板的表面上的发光叠层，其中透明基板具有满足发光元件的光提取效率的基板厚度减少不超过0.1 如果基板厚度减少30μm，则为％。

公开(公告)号：US20160104744A1

公开(公告)日：2016-04-14

申请号：US14954708

申请日：2015-11-30

Applicant: Epistar Corporation

Inventor： Li-Ping JOU ,  Yu-Chen YANG ,  Jui-Hung YEH

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38

CPC classification number: H01L27/156 ,  H01L27/153 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016

Abstract: An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.

Abstract translation: 具有N个发光二极管单元（N≥3）的LED阵列包括永久基板，永久基板上的接合层，接合层上的第二导电层，第二导电层上的第二隔离层，交叉金属 所述第二隔离层上的第一隔离层，所述交叉金属层上的第一隔离层，所述第一隔离层上的导电连接层，所述导电连接层上的外延结构，以及所述外延结构上的第一电极层。 发光二极管单元通过交叉金属层彼此电连接。

公开(公告)号：US20140191277A1

公开(公告)日：2014-07-10

申请号：US14150418

申请日：2014-01-08

Applicant: Epistar Corporation

Inventor： Hong-Che CHEN ,  Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Yu-Chen YANG ,  Jia-Kuen WANG ,  Chih-Nan LIN

IPC: H01L33/48

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/405 ,  H01L33/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises: a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom and the mesa comprises an upper surface; a first insulating layer in the recess and on a part of the upper surface of the mesa; and a first electrode comprising a first layer and a second layer, wherein the first layer comprises a first conductive material and is on another part of the upper surface of the mesa, and the second layer comprises a second conductive material and is on the first layer.

Abstract translation: 发光装置包括：发光半导体堆叠，其包括凹部和台面，其中所述凹部包括底部，所述台面包括上表面; 在所述凹部中和所述台面的上表面的一部分上的第一绝缘层; 以及包括第一层和第二层的第一电极，其中所述第一层包括第一导电材料并且位于所述台面的上表面的另一部分上，并且所述第二层包括第二导电材料并且位于所述第一层上 。

公开(公告)号：US20140084324A1

公开(公告)日：2014-03-27

申请号：US14093924

申请日：2013-12-02

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

IPC: H01L33/20 ,  H01L33/60

CPC classification number: H01L33/08 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

Abstract translation: 本申请的实施例的发光装置包括设置有第一主侧，第二主侧和有源层的半导体层序列; 形成在半导体层序列中的倾斜沟槽，具有靠近第二主侧的顶端，底端以及连接顶端和底端的内侧壁。 在该实施例中，内侧壁是倾斜表面。 发光装置还包括设置在斜面沟槽和第二主侧的内侧壁上的电介质层; 形成在所述电介质层上的第一金属层; 载体基材; 以及连接载体衬底和半导体层序列的第一连接层。