公开(公告)号：US20170235217A1

公开(公告)日：2017-08-17

申请号：US15041476

申请日：2016-02-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhengqing John Qi ,  Jed H. Rankin

IPC: G03F1/22 ,  G06F17/50

CPC classification number: G03F1/22 ,  G03F1/24 ,  G03F1/72 ,  G03F1/80 ,  G03F1/84 ,  G03F7/11 ,  G03F7/7065

Abstract: Disclosed are a repairable photomask structure and extreme ultraviolet (EUV) photolithography methods. The structure includes a multilayer stack, a protective layer above the stack and a light absorber layer above the protective layer. The stack includes alternating layers of high and low atomic number materials and a selected one of the high atomic number material layers is different from the others such that it functions as an etch stop layer. This configuration allows the photomask structure to be repaired if/when defects are detected near exposed surfaces of the multilayer stack following light absorber layer patterning. For example, when a defect is detected near an exposed surface of the stack in a specific opening in the light absorber layer, the opening can be selectively extended down to the etch stop layer or all the openings can be extended down to the etch stop layer in order to remove that defect.

公开(公告)号：US09508578B2

公开(公告)日：2016-11-29

申请号：US14171874

申请日：2014-02-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shawn A. Adderly ,  Samantha D. DiStefano ,  Jeffrey P. Gambino ,  Max G. Levy ,  Max L. Lifson ,  Jed H. Rankin ,  Timothy D. Sullivan

IPC: H01L21/67 ,  H01L21/00 ,  G01F1/76

CPC classification number: H01L21/67288 ,  G01F1/76 ,  H01L21/00 ,  H01L21/67109

Abstract: An apparatus and method for leak detection of coolant gas from a chuck. The apparatus includes a chuck having a top surface and configured to clamp a substrate to the top surface, the chuck having one or more recessed regions in the top surface, the recessed regions configured to allow a cooling gas to contact a backside of the substrate; a cooling gas inlet and a cooling gas outlet connected to the one or more recessed regions; a first measurement device connected to the cooling gas inlet and configured to measure a first amount of cooling gas entering the cooling gas inlet and a second measurement device connected to the cooling gas outlet and configured to measure a second amount of cooling gas exiting from the cooling gas outlet; and a controller configured to determine a difference between the first amount of cooling gas and the second amount of cooling gas.

Abstract translation: 一种用于从卡盘泄漏检测冷却剂气体的装置和方法。 该装置包括具有顶表面并被配置为将基板夹持到顶表面的卡盘，卡盘在顶表面中具有一个或多个凹陷区域，凹陷区域被配置为允许冷却气体接触基板的背面; 连接到所述一个或多个凹陷区域的冷却气体入口和冷却气体出口; 连接到冷却气体入口并被配置成测量进入冷却气体入口的第一量的冷却气体的第一测量装置和连接到冷却气体出口的第二测量装置，其被配置成测量从冷却出口排出的第二量的冷却气体 气体出口; 以及控制器，被配置为确定所述第一冷却气体量与所述第二冷却气体量之间的差。

公开(公告)号：US10816483B2

公开(公告)日：2020-10-27

申请号：US16233336

申请日：2018-12-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jed H. Rankin ,  Guoxiang Ning ,  Paul W. Ackmann ,  Jung-Yu Hsieh ,  Ming Lei

IPC: G01N21/956 ,  G03F7/20 ,  G06T7/00

Abstract: A reticle inspection system and related method are disclosed. The system includes a concave spherical mirror positioned adjacent a side of the reticle that is configured to reflect inspection light transmitted through the reticle back towards and through the reticle. A sensor is configured to create at least one of: a first inspection image representative of a circuit pattern of the reticle based on transmission of the inspection light through the first side of the reticle and a reflection thereof by the concave spherical mirror through the second side of the reticle, and a second inspection image representative of the circuit pattern of the reticle based on the reflection of the inspection light from the first side of the reticle. A controller is configured to identify a defect in the reticle based on at least one of the first inspection image and the second inspection image.

公开(公告)号：US09436789B2

公开(公告)日：2016-09-06

申请号：US14517292

申请日：2014-10-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brent A. Anderson ,  Edward J. Nowak ,  Jed H. Rankin

IPC: G06F17/50 ,  H01L27/12 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L27/092 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/84

CPC classification number: G06F17/5072 ,  G06F17/5081 ,  H01L21/8228 ,  H01L21/823412 ,  H01L21/8238 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/1203

Abstract: A structure, method and system for complementary strain fill for integrated circuit chips. The structure includes a first region of an integrated circuit having multiplicity of n-channel and p-channel field effect transistors (FETs); a first stressed layer over n-channel field effect transistors (NFETs) of the first region, the first stressed layer of a first stress type; a second stressed layer over p-channel field effect transistors (PFETs) of the first region, the second stressed layer of a second stress type, the second stress type opposite from the first stress type; and a second region of the integrated circuit, the second region not containing FETs, the second region containing first sub-regions of the first stressed layer and second sub-regions of the second stressed layer.

公开(公告)号：US09276002B2

公开(公告)日：2016-03-01

申请号：US14734310

申请日：2015-06-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kangguo Cheng ,  Ali Khakifirooz ,  Qizhi Liu ,  Edward J. Nowak ,  Jed H. Rankin

IPC: H01L27/108 ,  H01L29/66 ,  H01L29/78 ,  H01L27/12 ,  H01L29/06 ,  H01L29/161

CPC classification number: H01L27/10826 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/161 ,  H01L29/6653 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/785 ,  H01L29/7851

Abstract: The present disclosure generally provides for an integrated circuit (IC) structure with a bulk silicon finFET and methods of forming the same. An IC structure according to the present disclosure can include: a bulk substrate; a finFET located on a first region of the bulk substrate; and a layered dummy structure located on a second region of the bulk substrate, wherein the layered dummy structure includes a first crystalline semiconductive layer, a second crystalline semiconductive layer positioned on the first crystalline semiconductive layer, wherein the first crystalline semiconductive layer comprises a material distinct from the second crystalline semiconductive layer, and a third crystalline semiconductive layer positioned on the second crystalline semiconductive layer, wherein the third crystalline semiconductive layer comprises the material distinct from the second crystalline semiconductive layer.

Abstract translation: 本公开通常提供具有体硅片finFET的集成电路（IC）结构及其形成方法。 根据本公开的IC结构可以包括：体基板; 位于所述本体衬底的第一区域上的鳍状物FET; 以及分层虚拟结构，其位于所述本体衬底的第二区域上，其中所述分层虚拟结构包括第一晶体半导体层，位于所述第一晶体半导体层上的第二晶体半导体层，其中所述第一晶体半导体层包括不同的材料 以及位于所述第二晶体半导体层上的第三晶体半导体层，其中所述第三晶体半导体层包括与所述第二晶体半导体层不同的材料。

公开(公告)号：US10712498B2

公开(公告)日：2020-07-14

申请号：US16216321

申请日：2018-12-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Mark D. Jaffe ,  Kirk D. Peterson ,  Jed H. Rankin

IPC: G02B27/01 ,  A61B3/113 ,  G02B6/34 ,  G02B6/42 ,  G02F1/29 ,  G02F1/313 ,  G06K9/00 ,  G06K9/62 ,  G02B27/00 ,  G02F1/31 ,  G02B6/122 ,  G02B6/136 ,  G02B6/125 ,  G02B6/132 ,  G02B6/12 ,  G02B1/04

Abstract: Methods and structures for shielding optical waveguides are provided. A method includes forming a first optical waveguide core and forming a second optical waveguide core adjacent to the first optical waveguide core. The method also includes forming an insulator layer over the first optical waveguide core and the second optical waveguide core. The method further includes forming a shielding structure in the insulator layer between the first optical waveguide core and the second optical waveguide core.

公开(公告)号：US20200209166A1

公开(公告)日：2020-07-02

申请号：US16233336

申请日：2018-12-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jed H. Rankin ,  Guoxiang Ning ,  Paul W. Ackmann ,  Jung-Yu Hsieh ,  Ming Lei

IPC: G01N21/956 ,  G06T7/00 ,  G03F7/20

Abstract: A reticle inspection system and related method are disclosed. The system includes a concave spherical mirror positioned adjacent a side of the reticle that is configured to reflect inspection light transmitted through the reticle back towards and through the reticle. A sensor is configured to create at least one of: a first inspection image representative of a circuit pattern of the reticle based on transmission of the inspection light through the first side of the reticle and a reflection thereof by the concave spherical mirror through the second side of the reticle, and a second inspection image representative of the circuit pattern of the reticle based on the reflection of the inspection light from the first side of the reticle. A controller is configured to identify a defect in the reticle based on at least one of the first inspection image and the second inspection image.

公开(公告)号：US09927698B2

公开(公告)日：2018-03-27

申请号：US15234078

申请日：2016-08-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jed H. Rankin ,  Adam C. Smith

IPC: G03F1/70 ,  G03F1/78 ,  G03F1/20 ,  G03F7/20 ,  H01L21/027 ,  B82Y10/00 ,  G06F17/50 ,  B82Y40/00 ,  H01J37/317

CPC classification number: G03F1/70 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/76 ,  G03F1/78 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/2037 ,  G03F7/2063 ,  G03F7/7025 ,  G06F17/50 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  H01J37/3174 ,  H01L21/0274 ,  Y10S430/143

Abstract: A method and system for: forming a first rectangular shape with photomask writing equipment, using a first sub-threshold dosage on a photoresist layer of a photomask substrate; forming an overlapping second rectangular shape with the photomask writing equipment using a second sub-threshold dosage on the photoresist layer, the second rectangular shape being rotated relative to the first rectangular shape to form one of: a hexagonal overlap area and an octagonal overlap area, that exposes the photoresist layer to at least a threshold dosage; and forming a photomask, based on developing the exposed photoresist layer, to provide optical transmission corresponding to the one of: the hexagonal overlap area of at least the threshold dosage and the octagonal overlap area of at least the threshold dosage, for use by a photolithography system to write any of a contact, a via, or a curvilinear shape on an integrated circuit substrate.