公开(公告)号：US09209094B2

公开(公告)日：2015-12-08

申请号：US13952993

申请日：2013-07-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kangguo Cheng ,  Ramachandra Divakaruni ,  Ali Khakifirooz ,  Kern Rim

IPC: H01L27/00 ,  H01L21/00 ,  H01L21/84 ,  H01L29/78 ,  H01L27/12

CPC classification number: H01L21/845 ,  H01L27/1211 ,  H01L29/7848

Abstract: A first fin field effect transistor and a second fin field effect transistor are formed on an insulator layer overlying a semiconductor material layer. A first pair of trenches is formed through the insulator layer in regions in which a source region and a drain region of the first fin field effect transistor is to be formed. A second pair of trenches is formed partly into the insulator layer without extending to the top surface of the semiconductor material layer. The source region and the drain region of the first field effect transistor can be epitaxial stressor material portions that are anchored to, and epitaxially aligned to, the semiconductor material layer and apply stress to the channel of the first field effect transistor to enhance performance. The insulator layer provides electrical isolation from the semiconductor material layer to the second field effect transistor.

Abstract translation: 第一鳍状场效应晶体管和第二鳍状场效应晶体管形成在覆盖半导体材料层的绝缘体层上。 在要形成第一鳍式场效应晶体管的源极区域和漏极区域的区域中，通过绝缘体层形成第一对沟槽。 第二对沟槽部分地形成绝缘体层，而不延伸到半导体材料层的顶表面。 第一场效应晶体管的源极区域和漏极区域可以是外延应力材料部分，其被锚定并外延对准半导体材料层，并且将应力施加到第一场效应晶体管的沟道以增强性能。 绝缘体层提供从半导体材料层到第二场效应晶体管的电隔离。