公开(公告)号：US10432179B1

公开(公告)日：2019-10-01

申请号：US15928910

申请日：2018-03-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： See Taur Lee ,  Abdellatif Bellaouar

IPC: H03K5/00 ,  H03K17/687 ,  H03D7/14 ,  H03K19/21 ,  H01L27/12 ,  G01S7/03 ,  H01L23/66 ,  H01L21/84 ,  G01S13/93 ,  G01S7/35 ,  H01L29/78

Abstract: We disclose frequency doublers for use in millimeter-wave devices. One such frequency doubler comprises at least one passive mixer comprising at least one of the following: at least one transistor configured to receive a back gate voltage; at least one first input driver circuit; and two second input driver circuits. We also disclose a method comprising determining a target output voltage of a frequency doubler comprising at least one passive mixer comprising at least one transistor configured to receive a back gate voltage; determining an output voltage of the frequency doubler; increasing a back gate voltage of the at least one transistor, in response to determining that the output voltage is below the target output voltage; and decreasing the back gate voltage of the at least one transistor, in response to determining that the output voltage is above the target output voltage.

公开(公告)号：US10038413B2

公开(公告)日：2018-07-31

申请号：US15377580

申请日：2016-12-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： See Taur Lee ,  Abdellatif Bellaouar

IPC: H03F1/34 ,  H03F1/52 ,  H03F1/22 ,  H03F3/195 ,  H03F3/213 ,  H03F3/45 ,  H03F3/30 ,  H03F1/30

CPC classification number: H03F1/523 ,  H03F1/22 ,  H03F1/307 ,  H03F3/195 ,  H03F3/213 ,  H03F3/265 ,  H03F3/3022 ,  H03F3/45 ,  H03F3/45071 ,  H03F3/45183 ,  H03F3/45188 ,  H03F2200/451 ,  H03F2203/45154 ,  H03F2203/45228 ,  H03F2203/45311 ,  H03F2203/45481 ,  H03F2203/45662 ,  H03F2203/45686 ,  H03F2203/45731

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to a fully depleted silicon on insulator power amplifier with unique biases and voltage standing wave ratio protection and methods of manufacture. The structure includes a pseudo-differential common source amplifier; first stage cascode devices connected to the pseudo-differential common source amplifier and protecting the pseudo-differential common source amplifier from an over stress; second stage cascode devices connected to the first stage cascode devices and providing differential outputs; and at least one loop receiving the differential outputs from the second stage cascode devices and feeding back the differential outputs to the second stage cascode devices.