公开(公告)号：US20230219171A1

公开(公告)日：2023-07-13

申请号：US18180495

申请日：2023-03-08

Applicant: Gigaphoton Inc.

Inventor： Yasufumi KAWASUJI ,  Akira SUWA ,  Yasuhiro ADACHI

IPC: B23K26/382 ,  H01S3/225 ,  G02F1/35 ,  H01S3/109 ,  H01S3/00 ,  B23K26/0622 ,  B23K26/402 ,  C03B33/08

CPC classification number: B23K26/382 ,  H01S3/2256 ,  G02F1/354 ,  H01S3/109 ,  H01S3/0057 ,  B23K26/0622 ,  B23K26/402 ,  C03B33/082 ,  B23K2103/54

Abstract: A glass processing method according to a viewpoint of the present disclosure includes generating a pulse laser beam by using a laser oscillator, and irradiating alkali-free glass to be processed with the pulse laser beam. The wavelength of the pulse laser beam ranges from 248 nm to 266 nm, and the pulse laser beam has an energy ratio greater than or equal to 91% but smaller than or equal to 99% in the region from 5 ns after a pulse rises to 400 ns.

公开(公告)号：US20210046584A1

公开(公告)日：2021-02-18

申请号：US17088704

申请日：2020-11-04

Applicant: Gigaphoton Inc.

Inventor： Akira SUWA ,  Osamu WAKABAYASHI ,  Masashi SHIMBORI ,  Masakazu KOBAYASHI

IPC: B23K26/14 ,  B23K26/12

Abstract: A laser processing apparatus according to the present disclosure includes a placement base on which a processing receiving object is placed, an optical system that guides laser light to the processing receiving object, a gas supply port via which a gas is supplied to a laser light irradiated region of the processing receiving object, a gas recovery port via which the supplied gas is recovered, a mover that moves the irradiated region, and a controller that controls, in accordance with the moving direction of the irradiated region, the direction of the flow of the gas flowing from the gas supply port to the gas recovery port, and the controller changes the direction of the gas flow in response to a change in the moving direction of the irradiated region in such a way that the gas flows in the direction opposite the moving direction of the irradiated region.

公开(公告)号：US20200266105A1

公开(公告)日：2020-08-20

申请号：US16855427

申请日：2020-04-22

Applicant: Gigaphoton Inc. ,  KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION

Inventor： Hiroshi IKENOUE ,  Osamu WAKABAYASHI ,  Hiroaki OIZUMI ,  Akira SUWA

IPC: H01L21/78 ,  G02F1/01 ,  G02B27/09 ,  H01S3/11 ,  H01S3/225 ,  H01S3/23 ,  H01L21/223 ,  H01L21/268 ,  H01L21/67

Abstract: A laser irradiation method of irradiating, with a pulse laser beam, an irradiation object in which an impurity source film is formed on a semiconductor substrate includes: reading fluence per pulse of the pulse laser beam with which a rectangular irradiation region set on the irradiation object is irradiated and the number of irradiation pulses the irradiation region is irradiated, the fluence being equal to or larger than a threshold at or beyond which ablation potentially occurs to the impurity source film when the irradiation object is irradiated with pulses of the pulse laser beam in the irradiation pulse number and smaller than a threshold at or beyond which damage potentially occurs to the surface of the semiconductor substrate; calculating a scanning speed Vdx; and moving the irradiation object at the scanning speed Vdx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f.