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公开(公告)号：US20190052058A1
公开(公告)日：2019-02-14
申请号：US16051547
申请日：2018-08-01
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tadataka EDAMURA , Atsushi SUGIYAMA , Tatsuo DOUGAKIUCHI
IPC: H01S5/14 , H01S5/34 , H01S5/0625
Abstract: An external resonance type laser module includes a quantum cascade laser, a MEMS diffraction grating configured to include a diffraction/reflection portion configured to diffract and reflect light emitted from the quantum cascade laser and return a part of the light to the quantum cascade laser by swinging the diffraction/reflection portion, and a controller configured to control driving of the quantum cascade laser. The controller is configured to pulse-drive the quantum cascade laser such that pulsed light of a second frequency higher than a first frequency at which the diffraction/reflection portion swings is emitted from the quantum cascade laser and a phase of the pulsed light changes each time the diffraction/reflection portion reciprocates m times (m: an integer of 1 or more).
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公开(公告)号：US20130322479A1
公开(公告)日：2013-12-05
申请号：US13909611
申请日：2013-06-04
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Naota AKIKUSA , Tadataka EDAMURA
IPC: H01S5/34
CPC classification number: H01S5/3401 , B82Y20/00 , H01S5/0071 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/12 , H01S5/141 , H01S5/3402
Abstract: A quantum cascade laser includes a semiconductor substrate, and an active layer that is provided on the substrate, and has a cascade structure in which emission layers and injection layers are alternately laminated by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, the active layer generates light by intersubband transition in a quantum well structure. Further, in a laser cavity structure for light with a predetermined wavelength to be generated in the active layer, reflection control films including at least one layer of CeO2 film are formed on a first end face and a second end face facing each other. Thereby, it is possible to realize a quantum cascade laser capable of preferably realizing reflectance control for light within a mid-infrared wavelength region on the laser device end face.
Abstract translation: 量子级联激光器包括半导体衬底和设置在衬底上的有源层，并且具有级联结构，其中发射层和注入层通过多级层压单元层叠结构交替层叠，每个层叠结构由量子阱发射层 和注入层，有源层通过量子阱结构中的子带间跃迁产生光。 此外，在有源层中产生具有预定波长的光的激光腔结构中，在彼此相对的第一端面和第二端面上形成包括至少一层CeO 2膜的反射控制膜。 由此，能够实现能够优选实现激光装置端面的中红外波长区域内的光的反射率控制的量子级联激光器。
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公开(公告)号：US20230291180A1
公开(公告)日：2023-09-14
申请号：US18108177
申请日：2023-02-10
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA
CPC classification number: H01S5/3401 , H01S5/04254 , H01S5/32391
Abstract: A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate including an active layer having a quantum cascade structure; a first electrode formed on a surface on an opposite side of the semiconductor laminate from the semiconductor substrate; a second electrode; and an insulating film formed on at least one end surface of a first end surface and a second end surface of the semiconductor laminate. The first electrode includes a first metal layer made of a first metal, and a second metal layer made of a second metal having a higher ionization tendency than that of the first metal. The first metal layer has a first region exposed to an outside. The second metal layer has a second region located on one end surface side with respect to the first region. The insulating film reaches the second region from the one end surface.
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公开(公告)号：US20230139139A1
公开(公告)日：2023-05-04
申请号：US17914806
申请日：2021-03-25
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Shinichi FURUTA , Kazuue FUJITA
Abstract: A quantum-cascade laser element includes: an embedding layer including a first portion formed on a side surface of a ridge portion, and a second portion extending from an edge portion of the first portion on a side of a semiconductor substrate along a width direction of the semiconductor substrate; and a metal layer formed at least on a top surface of the ridge portion and on the first portion. A surface of the second portion on a side opposite to the semiconductor substrate is located between a surface of an active layer on a side opposite to the semiconductor substrate and a surface of the active layer on a side of the semiconductor substrate. When viewed in the width direction of the semiconductor substrate, a part of the metal layer on the first portion overlaps the active layer. The metal layer is directly formed on the first portion.
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公开(公告)号：US20230132974A1
公开(公告)日：2023-05-04
申请号：US17914525
申请日：2021-03-25
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Tadataka EDAMURA , Naota AKIKUSA
Abstract: A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor mesa formed on the semiconductor substrate to include an active layer having a quantum-cascade structure and to extend along a light waveguide direction; an embedding layer formed to interpose the semiconductor mesa along a width direction of the semiconductor substrate; a cladding layer formed over the semiconductor mesa and over the embedding layer; and a metal layer formed on the cladding layer. A pair of groove portions extending along the light waveguide direction are formed in a surface on an opposite side of the cladding layer from the semiconductor substrate. The pair of groove portions are disposed in two respective outer regions when the cladding layer is equally divided into four regions in the width direction of the semiconductor substrate. The metal layer enters the pair of groove portions.
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Patent Agency Ranking
公开(公告)号：US20230087419A1
公开(公告)日：2023-03-23
申请号：US17945252
申请日：2022-09-15
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Takahide OCHIAI , Tadataka EDAMURA
IPC: H01S5/14 , H01S5/34 , H01S5/023 , H01S5/02253 , H01S5/0236
Abstract: The laser module includes a QCL element, a diffraction grating unit, a first lens holder, a second lens holder, and a mount member. The first mounting portion has a first top surface on which the first lens holder is mounted via an adhesive layer. The third mounting portion has a third top surface on which the second lens holder is mounted via an adhesive layer. The second mounting portion has a second top surface located higher than the first top surface and the third top surface, a first side surface connecting the second top surface and the first top surface, and a second side surface connecting the second top surface and the third top surface. A notch extending from the second top surface to the first top surface or the third top surface is formed in at least one of the first side surface and the second side surface.
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公开(公告)号：US20220271506A1
公开(公告)日：2022-08-25
申请号：US17672768
申请日：2022-02-16
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Takahide OCHIAI , Tadataka EDAMURA , Naota AKIKUSA
IPC: H01S5/14 , H01S5/02345 , H01S5/02325
Abstract: The laser module includes a QCL element, a MEMS diffraction grating, a lens holder holding a lens disposed between the QCL element and the MEMS diffraction grating, a package, an electrode terminal disposed along an inner wall surface of the package, and a wire for electrically connecting the electrode terminal and a coil. The top wall of the package faces the bottom wall of the package in a direction orthogonal to the optical axis direction of the lens. The MEMS diffraction grating includes an electrode pad electrically connected to the coil. The electrode pad is connected to the electrode terminal via the wire. A height position of the electrode pad with respect to the bottom wall is equal to or higher than a height position of the electrode terminal with respect to the bottom wall.
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公开(公告)号：US20220271505A1
公开(公告)日：2022-08-25
申请号：US17672772
申请日：2022-02-16
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Takahide OCHIAI , Tadataka EDAMURA , Naota AKIKUSA
IPC: H01S5/14 , H01S5/02253
Abstract: The laser module includes a QCL element, a MEMS diffraction grating, a lens holder for holding a lens disposed between the QCL element and the MEMS diffraction grating, and a package. The package includes a bottom wall, a side wall erected on the bottom wall and formed in an annular shape so as to surround a region in which the QCL element is accommodated, and a top wall closing an opening of the side wall on a side opposite to a side where the bottom wall is disposed. The top wall faces the bottom wall in a direction orthogonal to the optical axis direction of the lens, and the distance between the top wall and a surface of the lens holder on a side where the top wall is disposed is smaller than a thickness of the lens holder along the optical axis direction of the lens.
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19.发明申请公开(公告)号：US20240413604A1
公开(公告)日：2024-12-12
申请号：US18811057
申请日：2024-08-21
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Akio ITO , Tadataka EDAMURA
Abstract: A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.
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公开(公告)号：US20240283213A1
公开(公告)日：2024-08-22
申请号：US18438687
申请日：2024-02-12
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Keita FURUOKA , Satoru OKAWARA , Takehito NAGAKURA
IPC: H01S5/02
CPC classification number: H01S5/0203 , H01S5/0206
Abstract: A method for manufacturing a semiconductor laser device of an embodiment includes a first step of preparing a wafer, a second step of forming a device dividing groove by etching, a third step of forming a cleavage introducing groove at a position overlapping a cleavage line, a fourth step of obtaining a plurality of laser bars by cleaving the wafer along the cleavage line, and a fifth step of cleaving each of the plurality of laser bars along the device dividing line. In the second step, the device dividing groove is not formed on the cleavage line. In the third step, the cleavage introducing groove is formed only outside a device region, or a length of a portion of the cleavage introducing groove included outside the device region is longer than a length of a portion of the cleavage introducing groove included inside the device region.
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