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    METHOD FOR PRODUCING QUANTUM CASCADE LASER ELEMENT
    1.
    发明公开
    METHOD FOR PRODUCING QUANTUM CASCADE LASER ELEMENT 审中-公开

    公开(公告)号：US20230143711A1

    公开(公告)日：2023-05-11

    申请号：US17914836

    申请日：2021-03-25

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Atsushi SUGIYAMA ,  Yuji KANEKO ,  Yasufumi TAKAGI

    IPC: H01S5/34 ,  H01S5/227 ,  H01S5/0234

    CPC classification number: H01S5/3401 ,  H01S5/2275 ,  H01S5/0234

    Abstract: A method for manufacturing a quantum cascade laser element includes: a step of forming a semiconductor layer on a first major surface of a semiconductor wafer; a step of removing a part of the semiconductor layer by etching such that each of portions of the semiconductor layer includes a ridge portion; a step of forming an insulating layer such that at least a part of a surface of the ridge portion is exposed; a step of embedding the ridge portion in each of metal plating layers; a step of flattening a surface of the metal plating layers by polishing in a state where a protective member is disposed; a step of forming an electrode layer on a second major surface of the semiconductor wafer; and a step of cleaving the semiconductor wafer and the semiconductor layer in a state where the protective member is removed.

    SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER ELEMENT
    2.
    发明申请
    SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER ELEMENT 有权

    公开(公告)号：US20230114599A1

    公开(公告)日：2023-04-13

    申请号：US17960281

    申请日：2022-10-05

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Atsushi SUGIYAMA ,  Kousuke SHIBATA

    IPC: H01S5/042 ,  H01S5/22 ,  H01S5/34 ,  H01S5/02

    Abstract: A semiconductor laser element includes: a semiconductor substrate; a semiconductor laminate; a first electrode in which a ridge portion of the semiconductor laminate is embedded; and a second electrode. A first region of a side surface of the first electrode is separated from a first end surface in such a manner to extend away from the first end surface as the first region extends away from the ridge portion to both sides. A shortest distance between a first side surface and the first region is smaller than each of a shortest distance between a third side surface and a third region and a shortest distance between a fourth side surface and a fourth region. The first region does not include a corner in a range satisfying D1 ≤ S1 and D1 ≤ S2.

    LASER MODULE
    5.
    发明公开
    LASER MODULE 审中-公开

    公开(公告)号：US20240356306A1

    公开(公告)日：2024-10-24

    申请号：US18630166

    申请日：2024-04-09

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Takahide OCHIAI ,  Atsushi SUGIYAMA ,  Tadataka Edamura

    IPC: H01S5/34 ,  H01S5/02216 ,  H01S5/02253 ,  H01S5/14

    CPC classification number: H01S5/3402 ,  H01S5/02216 ,  H01S5/02253 ,  H01S5/141

    Abstract: A laser module includes a QCL element, a diffraction grating portion, a first lens member configured to be disposed between the first end face and the diffraction grating portion, and a second lens member configured to be disposed at a position facing a second end face of the QCL element, and a package configured to house the QCL element, the diffraction grating portion, and the first lens member. A distance in an X-axis direction between an incident surface of the first lens member on which the first light is incident and the first end face is shorter than a distance in the X-axis direction between an incident surface of the second lens member on which the third light is incident and the second end face.

    LASER MODULE
    6.
    发明公开
    LASER MODULE 审中-公开

    公开(公告)号：US20240356301A1

    公开(公告)日：2024-10-24

    申请号：US18630238

    申请日：2024-04-09

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Atsushi SUGIYAMA ,  Takahide Ochiai ,  Tadataka Edamura

    IPC: H01S5/02253 ,  H01S5/02216 ,  H01S5/14 ,  H01S5/34

    CPC classification number: H01S5/02253 ,  H01S5/02216 ,  H01S5/141 ,  H01S5/3402

    Abstract: A laser module according to an embodiment includes a QCL element, a diffraction grating portion configured to diffract and reflect first light emitted from a first end face of the QCL element and return second light to the first end face, and a first portion configured to be disposed between the first end face and the diffraction grating portion, allow the first light and the second light to pass therethrough, and collimate the first light. When viewed from a Y-axis direction, the diffraction grating portion is inclined with respect to a Z-axis direction. A position of a beam waist of the first light collimated by the first portion in an X-axis direction is located between a position of one end of the diffraction grating portion in the Z-axis direction and a position of the other end of the diffraction grating portion in the Z-axis direction.

    METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE, AND SEMICONDUCTOR LASER DEVICE
    7.
    发明公开
    METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE, AND SEMICONDUCTOR LASER DEVICE 审中-公开

    公开(公告)号：US20240283212A1

    公开(公告)日：2024-08-22

    申请号：US18438567

    申请日：2024-02-12

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Keita FURUOKA ,  Atsushi SUGIYAMA ,  Takehito NAGAKURA ,  Satoru OKAWARA

    IPC: H01S5/02

    CPC classification number: H01S5/0203 ,  H01S5/0206

    Abstract: A method for manufacturing a semiconductor laser device of an embodiment includes a first step of preparing a wafer and a second step of forming a device dividing groove by etching along a device dividing line. The device dividing groove has a first portion and a second portion. At least a portion of an inner surface of the device dividing groove formed by the first portion is inclined with a Z-axis direction such that a width of the device dividing groove in a Y-axis direction decreases from a first primary surface side toward a second primary surface side. An inclination angle of an inner surface of the first portion with respect to the Z-axis direction is larger than an inclination angle of an inner surface of the second portion with respect to the Z-axis direction.

    QUANTUM-CASCADE LASER ELEMENT AND QUANTUM-CASCADE LASER DEVICE
    8.
    发明公开
    QUANTUM-CASCADE LASER ELEMENT AND QUANTUM-CASCADE LASER DEVICE 审中-公开

    公开(公告)号：US20230148134A1

    公开(公告)日：2023-05-11

    申请号：US17914552

    申请日：2021-03-25

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Atsushi SUGIYAMA ,  Yuji KANEKO ,  Kazuma TANIMURA

    IPC: H01S5/34 ,  H01S5/22

    CPC classification number: H01S5/3401 ,  H01S5/2202

    Abstract: A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor mesa formed on the semiconductor substrate to include an active layer having a quantum-cascade structure and to extend along a light waveguide direction; an embedding layer formed to interpose the semiconductor mesa along a width direction of the semiconductor substrate; a cladding layer formed at least on the semiconductor mesa; and a metal layer formed at least on the cladding layer. A thickness of the cladding layer is thinner in a second region located outside a first region in the width direction of the semiconductor substrate than in the first region of which at least a part overlaps the semiconductor mesa when viewed in a thickness direction of the semiconductor substrate. The metal layer extends over the first region and the second region.

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