公开(公告)号：US09776409B2

公开(公告)日：2017-10-03

申请号：US15305026

申请日：2014-04-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Kevin Dooley ,  John Larkin ,  Liam Cheevers ,  Kenneth Hickey ,  Graeme Scott

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1433 ,  B41J2/1603 ,  B41J2/162 ,  B41J2/1631

Abstract: A method for forming a fluidic ejection device is described. The method includes depositing a first layer on a silicon wafer, the first layer including a first photoresist, and exposing, at a first energy level, a portion of the first photoresist. The method also includes depositing a second layer on the first layer, the second layer including a second photoresist that is more sensitive to light than the first photoresist, and exposing, at a second energy level, a portion of the second photoresist. The second energy level is less than the first energy level. The method also includes developing unexposed portions of the first photoresist and the second photoresist to form an enclosed firing chamber and a nozzle.

公开(公告)号：US20170151781A1

公开(公告)日：2017-06-01

申请号：US15305026

申请日：2014-04-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Kevin Dooley ,  John Larkin ,  Liam Cheevers ,  Kenneth Hickey ,  Graeme Scott

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1433 ,  B41J2/1603 ,  B41J2/162 ,  B41J2/1631

Abstract: A method for forming a fluidic ejection device is described. The method includes depositing a first layer on a silicon wafer, the first layer including a first photoresist, and exposing, at a first energy level, a portion of the first photoresist. The method also includes depositing a second layer on the first layer, the second layer including a second photoresist that is more sensitive to light than the first photoresist, and exposing, at a second energy level, a portion of the second photoresist. The second energy level is less than the first energy level. The method also includes developing unexposed portions of the first photoresist and the second photoresist to form an enclosed firing chamber and a nozzle.

公开(公告)号：US20170146475A1

公开(公告)日：2017-05-25

申请号：US15218952

申请日：2016-07-25

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Kevin Dooley ,  Richard Coull ,  Graeme Scott ,  Lorraine Byrne

IPC: G01N27/07

CPC classification number: G01N27/07 ,  B82Y30/00 ,  C25D3/12 ,  C25D5/022 ,  G01N27/048 ,  G01N27/126 ,  G01N27/127

Abstract: A structure for a chemical sensing device includes a plurality of recesses and a plurality of electrically conductive elements located in, and protruding from, the plurality of recesses.

公开(公告)号：US20140314624A1

公开(公告)日：2014-10-23

申请号：US13868435

申请日：2013-04-23

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Kevin Dooley ,  Richard Coull ,  Graeme Scott ,  Lorraine Byrne

IPC: G01N27/07 ,  C25D5/02

CPC classification number: G01N27/07 ,  B82Y30/00 ,  C25D3/12 ,  C25D5/022 ,  G01N27/048 ,  G01N27/126 ,  G01N27/127

Abstract: A structure for a chemical sensing device, the structure comprising at least one electrically conductive element located in, and protruding from, at least one recess. A method of manufacturing the structure includes: (a) providing a template comprising at least one recess having a recess depth; (b) providing an electrically conductive material in the at least one recess; and (c) removing part of the template to decrease the recess depth of the at least one recess, thereby forming said protruding at least one electrically conductive element.

Abstract translation: 一种用于化学感测装置的结构，所述结构包括位于至少一个凹部中并从其突出的至少一个导电元件。 一种制造该结构的方法包括：（a）提供包含至少一个具有凹陷深度的凹部的模板; （b）在所述至少一个凹部中提供导电材料; 和（c）去除所述模板的一部分以减小所述至少一个凹部的凹陷深度，由此形成所述突出的至少一个导电元件。

公开(公告)号：US20140209469A1

公开(公告)日：2014-07-31

申请号：US13752868

申请日：2013-01-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Graeme Scott ,  Kevin Dooley ,  Lorraine Byrne ,  Pat J. Reilly

IPC: C25D1/04 ,  B29C41/02

CPC classification number: C25D1/04 ,  B82B3/0033 ,  B82Y40/00 ,  C23C18/1633 ,  C25D1/006 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2037 ,  G03F7/2039 ,  H05K1/09 ,  H05K3/0023 ,  H05K3/007 ,  H05K3/20 ,  H05K2203/0548 ,  H05K2203/1142 ,  Y10S977/762 ,  Y10S977/882 ,  Y10S977/932

Abstract: Controlling dimensions of nanowires includes lithographically forming a trench in a layer of a polymer resin with a width less than one micrometer where the polymer resin has a thickness less than one micrometer and is deposited over an electrically conductive substrate, depositing a nanowire material within the trench to form a nanowire, and obtaining the nanowire from the trench with a removal mechanism.

Abstract translation: 纳米线的控制尺寸包括在宽度小于1微米的聚合物树脂层中光刻形成沟槽，其中聚合物树脂具有小于1微米的厚度并沉积在导电衬底上，在沟槽内沉积纳米线材料 形成纳米线，用去除机构从沟槽获得纳米线。

公开(公告)号：US20140199522A1

公开(公告)日：2014-07-17

申请号：US13744187

申请日：2013-01-17

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Richard Coull ,  Kevin Dooley ,  David Fitzpatrick

IPC: B32B3/30 ,  B32B5/16

CPC classification number: H05K3/1258 ,  G03F7/0002 ,  H05K1/097 ,  H05K2201/09036 ,  H05K2201/09045 ,  Y10T428/24479 ,  Y10T428/24579

Abstract: Devices with nanosized particles deposited on shaped surface geometries include a substrate with an active material of nanosized particles deposited on a surface of the substrate. The active material has an edge formed at a position determined with a shaped geometry of the surface.

Abstract translation: 沉积在成形表面几何上的纳米尺寸颗粒的装置包括具有沉积在基底表面上的纳米尺寸颗粒的活性材料的基底。 活性材料具有形成在由表面的成形几何形状确定的位置处的边缘。