公开(公告)号：US10481484B2

公开(公告)日：2019-11-19

申请号：US15829090

申请日：2017-12-01

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Takahiro Onoue ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/26 ,  G03F1/38 ,  G03F1/48 ,  G03F7/20 ,  C23C14/06 ,  C23C14/18

Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.

公开(公告)号：US09864267B2

公开(公告)日：2018-01-09

申请号：US15106919

申请日：2014-11-26

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Takahiro Onoue ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/26 ,  G03F1/48 ,  G03F1/38 ,  G03F7/20 ,  C23C14/06 ,  C23C14/18

CPC classification number: G03F1/24 ,  C23C14/0641 ,  C23C14/185 ,  G03F1/26 ,  G03F1/38 ,  G03F1/48 ,  G03F7/2004

Abstract: To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, the phase-shift film 16 has a tantalum-based material layer comprising tantalum, and an anti-diffusion layer 15 comprising ruthenium and oxygen is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern.

公开(公告)号：US09740091B2

公开(公告)日：2017-08-22

申请号：US14906288

申请日：2014-07-15

Applicant: HOYA CORPORATION

Inventor： Takahiro Onoue ,  Hirofumi Kozakai

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/76 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/48 ,  G03F1/76 ,  G03F7/2004

Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film, which gives a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.

公开(公告)号：US20140370424A1

公开(公告)日：2014-12-18

申请号：US14373715

申请日：2013-03-21

Applicant: HOYA CORPORATION

Inventor： Takahiro Onoue ,  Toshihiko Orihara

IPC: G03F1/24 ,  H01L21/033

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/48 ,  H01L21/0332 ,  H01L21/0337 ,  Y10T428/31678

Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film and the like used in the manufacturing of a reflective mask blank for EUV lithography which is to be subjected to dry etching with a Cl-based gas, wherein in the substrate with the multilayer reflective film, the loss of protective films by the dry etching and subsequent wet cleaning is very limited. The present invention is a substrate with a multilayer reflective film used in the manufacturing of a reflective mask blank for EUV lithography, comprising a substrate, a multilayer reflective film disposed on the substrate to reflect EUV light, and a protective film disposed on the multilayer reflective film to protect the multilayer reflective film, the protective film includes an alloy containing at least two metals, the alloy being an all-proportional solid solution.

Abstract translation: 本发明的目的是提供一种用于制造用于EUV光刻的反射掩模坯料的多层反射膜等的衬底，其将用Cl基气体进行干蚀刻，其中在衬底 通过多层反射膜，通过干蚀刻和随后的湿法清洁的保护膜的损失非常有限。 本发明是一种具有用于制造用于EUV光刻的反射掩模板的多层反射膜的基板，包括基板，设置在基板上以反射EUV光的多层反射膜以及设置在多层反射层上的保护膜 膜保护多层反射膜，保护膜包括含有至少两种金属的合金，该合金是全比例的固溶体。