公开(公告)号：US12057158B1

公开(公告)日：2024-08-06

申请号：US18021177

申请日：2022-08-12

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao Tong ,  Binhao Wang ,  Xiangshui Miao

IPC: G11C11/4093 ,  G11C11/406 ,  G11C11/4096

CPC classification number: G11C11/4096 ,  G11C11/40603 ,  G11C11/4093 ,  G11C2211/4068

Abstract: A method for operating a dynamic memory is provided, and the method includes the following steps. A refresh operation is performed on the dynamic memory according to predetermined interval time T, an operation command is received in real time at the same time, a read operation is performed on a selected memory cell according to position information of the selected memory cell in the operation command when the operation command is received, and state data read in the read operation is temporarily stored in a read buffer. The interval time T is less than time t required for a voltage value of a capacitor in the memory cell to drop to a critical capacitor voltage value for the read operation to correctly read the state data of the memory cell during a write operation. According to operation command type information in the operation command, corresponding operations are performed on the selected memory cell.

公开(公告)号：US11659781B2

公开(公告)日：2023-05-23

申请号：US16655191

申请日：2019-10-16

Applicant: Huazhong University of Science and Technology

Inventor： Xiangshui Miao ,  Qi Lin ,  Hao Tong

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/141 ,  H01L27/24 ,  H01L45/1253 ,  H01L45/1608 ,  H01L45/1675

Abstract: A selector device including a first metal electrode layer, a second metal electrode layer and a switching layer disposed between the first metal electrode layer and the second metal electrode layer. The switching layer is a stacked assembly of ABA, BAB, AB or BA, where A is an ion supply layer, and B is a conversion layer. The ion supply layer includes a chalcogenide metal material having a metal atomic content of more than 0% and not more than 50% with respect to the chalcogenide metal material. The conversion layer includes a chalcogenide material.

公开(公告)号：US11233198B2

公开(公告)日：2022-01-25

申请号：US17040998

申请日：2018-08-09

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiangshui Miao ,  Hao Tong ,  Yushan Shen

IPC: H01L45/00 ,  H01L27/24

Abstract: The disclosure discloses a three-dimensional stacked memory and a preparation method thereof. The storage unit adopts a constrained structure phase change storage unit, and uses a crossbar storage array structure to build a large-capacity storage array. The preparation method includes: preparing N first strip-shaped electrodes along a crystal direction on a substrate; preparing a first insulating layer with M*N array of through holes; filling the M*N array of through holes of the first insulating layer with a phase change material to form first phase change units; preparing M second strip-shaped electrodes; preparing a second insulating layer, using spin-coated photoresist as a sacrificial material, performing a local planarization on the surface of the second insulating layer; forming M*N array of through holes on the second insulating layer; filling a phase change material to form second phase change units; preparing N third strip-shaped electrodes to form a two-layer stacked phase change memory.