公开(公告)号：US12057158B1

公开(公告)日：2024-08-06

申请号：US18021177

申请日：2022-08-12

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao Tong ,  Binhao Wang ,  Xiangshui Miao

IPC: G11C11/4093 ,  G11C11/406 ,  G11C11/4096

CPC classification number: G11C11/4096 ,  G11C11/40603 ,  G11C11/4093 ,  G11C2211/4068

Abstract: A method for operating a dynamic memory is provided, and the method includes the following steps. A refresh operation is performed on the dynamic memory according to predetermined interval time T, an operation command is received in real time at the same time, a read operation is performed on a selected memory cell according to position information of the selected memory cell in the operation command when the operation command is received, and state data read in the read operation is temporarily stored in a read buffer. The interval time T is less than time t required for a voltage value of a capacitor in the memory cell to drop to a critical capacitor voltage value for the read operation to correctly read the state data of the memory cell during a write operation. According to operation command type information in the operation command, corresponding operations are performed on the selected memory cell.

公开(公告)号：US12249373B2

公开(公告)日：2025-03-11

申请号：US18033075

申请日：2022-01-25

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao Tong ,  Binhao Wang ,  Xiangshui Miao

IPC: G11C11/16 ,  G11C13/00

Abstract: Disclosed are an OTS-based dynamic storage structure and an operation method thereof. The OTS-based dynamic storage structure includes a plurality of storage units distributed in an array, and each storage unit includes an OTS gating transistor and a storage capacitor. The OTS gating transistor has two states, namely, high resistance state and low resistance state. When the voltage across the OTS gating transistor exceeds the threshold voltage Vth, the OTS gating transistor is switched from the high resistance state to the low resistance state. When the voltage across the OTS gating transistor in the low resistance state is lower than the holding voltage Vhold, the OTS gating transistor is switched from the low resistance state to the high resistance state.

公开(公告)号：US20240379159A1

公开(公告)日：2024-11-14

申请号：US18033075

申请日：2022-01-25

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao TONG ,  Binhao Wang ,  Xiangshui MIAO

IPC: G11C13/00

Abstract: Disclosed are an OTS-based dynamic storage structure and an operation method thereof. The OTS-based dynamic storage structure includes a plurality of storage units distributed in an array, and each storage unit includes an OTS gating transistor and a storage capacitor. The OTS gating transistor has two states, namely, high resistance state and low resistance state. When the voltage across the OTS gating transistor exceeds the threshold voltage Vth, the OTS gating transistor is switched from the high resistance state to the low resistance state. When the voltage across the OTS gating transistor in the low resistance state is lower than the holding voltage Vhold, the OTS gating transistor is switched from the low resistance state to the high resistance state.