公开(公告)号：US10038033B2

公开(公告)日：2018-07-31

申请号：US14983445

申请日：2015-12-29

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang

IPC: H01L27/30 ,  H01L51/00 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/0034 ,  H01L51/0036 ,  H01L51/005 ,  H01L51/422 ,  H01L51/424 ,  H01L51/441 ,  H01L2251/301 ,  H01L2251/303 ,  Y02E10/549

Abstract: An image sensor is provided. The image sensor includes a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent to each other, a pixel electrode disposed on the pixel sensing circuit, and a opto electrical conversion layer including a photo sensing layer and a carrier transport layer disposed on the pixel sensing circuit and the pixel electrode. The pixel electrode is electrically connected to the pixel sensing circuit and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes and the second electrodes are coplanar and have different polarities. The first electrode or the second electrode located in the first pixel region is adjacent to the first electrode or the second electrode having the same polarity located in the second pixel region.

公开(公告)号：US20240110968A1

公开(公告)日：2024-04-04

申请号：US18334387

申请日：2023-06-14

Applicant: Industrial Technology Research Institute

Inventor： Yan-Rung Lin ,  Chung-Lun Kuo ,  Chia-Liang Yeh

IPC: G01R31/26 ,  G01R31/44

CPC classification number: G01R31/2635 ,  G01R31/44

Abstract: An inspection system includes an excitation light source, a voltage-sensing film, an illumination light source, an image capture device. The excitation light source provides an excitation beam to light-emitting diodes to generate open-circuit voltages. The voltage-sensing film is at a top side of the light-emitting diodes and includes a voltage-sensing medium layer and a first electrode layer. The first electrode layer is in the voltage-sensing medium layer to provide a gain effect of the open-circuit voltages, so that the voltage-sensing medium layer senses the open-circuit voltages, and a display of the voltage-sensing medium layer is changed with a portion or all of the open-circuit voltages. The illumination light source provides an illumination beam to the voltage-sensing film to generate a sensing image according to a display change. The image capture device is on a transmission path of the sensing image and receives the sensing image to generate an inspection result.

公开(公告)号：US11656181B2

公开(公告)日：2023-05-23

申请号：US17135874

申请日：2020-12-28

Applicant: Industrial Technology Research Institute

Inventor： Yan-Rung Lin ,  Chih-Hsiang Liu ,  Chung-Lun Kuo ,  Hsiang-Chun Wei ,  Yeou-Sung Lin ,  Chieh-Yi Lo

IPC: G01N21/66 ,  G01N21/88

CPC classification number: G01N21/66 ,  G01N21/8806 ,  G01N2201/062

Abstract: An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer. An inspection method for inspecting light-emitting diodes is also provided.

公开(公告)号：US20210231570A1

公开(公告)日：2021-07-29

申请号：US17135874

申请日：2020-12-28

Applicant: Industrial Technology Research Institute

Inventor： Yan-Rung Lin ,  Chih-Hsiang Liu ,  Chung-Lun Kuo ,  Hsiang-Chun Wei ,  Yeou-Sung Lin ,  Chieh-Yi Lo

IPC: G01N21/66 ,  G01N21/88

Abstract: An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer. An inspection method for inspecting light-emitting diodes is also provided.

公开(公告)号：US10418392B2

公开(公告)日：2019-09-17

申请号：US16015307

申请日：2018-06-22

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang ,  Sheng-Min Yu

IPC: H01L27/146

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

公开(公告)号：US10038019B2

公开(公告)日：2018-07-31

申请号：US15394712

申请日：2016-12-29

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang ,  Sheng-Min Yu

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14683

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

公开(公告)号：US20230184819A1

公开(公告)日：2023-06-15

申请号：US18075431

申请日：2022-12-06

Applicant: Industrial Technology Research Institute

Inventor： Yan-Rung Lin ,  Chih-Hsiang Liu ,  Chung-Lun Kuo

IPC: G01R31/26 ,  G06T7/00

CPC classification number: G01R31/2635 ,  G06T7/0004 ,  G06T2207/30148

Abstract: A method for inspecting LED dies includes the following steps. First electrodes and second electrodes of LED dies to be inspected are short-circuited via a conductive layer on an inspection substrate, or an inspection bias voltage is applied between the first electrodes and the second electrodes of the LED dies. An excitation light is irradiated on the LED dies to be inspected on the inspection substrate such that the LED dies to be inspected emit a secondary light. When the first electrodes and the second electrodes of the LED dies to be inspected are open, short-circuited, and/or subjected to the inspection bias voltage, the secondary light is captured via an optical sensor. An output of the optical sensor is received via a computer and a spectrum difference of the secondary light is calculated to determine whether the LED dies are abnormal or to classify the LED dies to be inspected.

公开(公告)号：US10403657B2

公开(公告)日：2019-09-03

申请号：US15813088

申请日：2017-11-14

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang ,  Sheng-Min Yu

IPC: H01L27/146

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

公开(公告)号：US20170186818A1

公开(公告)日：2017-06-29

申请号：US14983445

申请日：2015-12-29

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang

IPC: H01L27/30 ,  H01L51/00 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/0034 ,  H01L51/0036 ,  H01L51/005 ,  H01L51/422 ,  H01L51/424 ,  H01L51/441 ,  H01L2251/301 ,  H01L2251/303 ,  Y02E10/549

Abstract: An image sensor is provided. The image sensor includes a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent to each other, a pixel electrode disposed on the pixel sensing circuit, and a opto electrical conversion layer including a photo sensing layer and a carrier transport layer disposed on the pixel sensing circuit and the pixel electrode. The pixel electrode is electrically connected to the pixel sensing circuit and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes and the second electrodes are coplanar and have different polarities. The first electrode or the second electrode located in the first pixel region is adjacent to the first electrode or the second electrode having the same polarity located in the second pixel region.