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11.发明授权公开(公告)号：US10739607B2
公开(公告)日：2020-08-11
申请号：US16172882
申请日：2018-10-29
Applicant: Industrial Technology Research Institute
Inventor： Hsueh-Chih Chang , Mu-Tao Chu , Hung-Lieh Hu , Jui-Ying Lin
Abstract: A light source module adapted to provide a superposition structured pattern includes a light emitting device adapted to provide a light beam, a light guiding element including a polarizing beam splitter to separate the light beam into a first light beam and a second light beam, a first diffractive element configured to convert the first light beam into a first structured light, and a second diffractive element configured to convert the second light beam into a second structured light. Polarization states of the first light beam and the second light beam are different. The first and second structured lights are projected into a projection region, and overlapped and imaged as a superposition structured pattern. The projection region has sub-projection regions arranged in a matrix and adjacent to each other, and the pattern distribution of the superposition structured pattern in each sub-projection region is different from each other.
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公开(公告)号：US09171779B2
公开(公告)日：2015-10-27
申请号：US14472400
申请日：2014-08-29
Applicant: Industrial Technology Research Institute
Inventor： Jui-Ying Lin , Yen-Hsiang Fang , Chia-Hsin Chao , Yao-Jun Tsai , Yi-Chen Lin
IPC: H01S5/024 , H01L23/48 , H01L21/306 , H01L27/02 , H01L33/20 , H01L33/62 , H01L21/768 , H01L23/00 , H01S5/02 , H01S5/026 , H01S5/34 , G02B6/12 , G02B6/34 , H01L29/861
CPC classification number: H01L23/481 , G02B6/12 , G02B6/34 , G02B2006/12061 , H01L21/30604 , H01L21/486 , H01L21/76898 , H01L23/13 , H01L23/147 , H01L23/49827 , H01L23/60 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/80 , H01L25/167 , H01L27/0255 , H01L29/861 , H01L33/20 , H01L33/62 , H01L2224/04 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/06102 , H01L2224/08148 , H01L2224/08238 , H01L2224/16148 , H01L2224/16238 , H01L2224/29294 , H01L2224/32148 , H01L2224/32238 , H01L2224/48091 , H01L2224/48105 , H01L2224/48148 , H01L2224/48229 , H01L2224/73265 , H01L2224/80801 , H01L2224/80805 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83805 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/01322 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1434 , H01L2933/0066 , H01S5/0208 , H01S5/02469 , H01S5/026 , H01S5/34 , H01L2924/00 , H01L2224/80 , H01L2924/00012 , H01L2224/45099
Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.
Abstract translation: 提供半导体激光器结构。 半导体激光器包括中心热分流器，环形硅波导，连续热分流器，粘合剂层和激光元件。 中心热分流器位于具有围绕中心热分流的掩埋氧化物层的SOI衬底上。 环形硅波导位于掩埋氧化层上并围绕中心热分流。 环形硅波导包括p型材料部分的P-N结，n型材料部分和其间的耗尽区域。 连续的热分流器覆盖一部分掩埋的氧化物层并且环绕着环形硅波导。 粘合剂层覆盖环形硅波导和掩埋氧化物层。 激光元件覆盖中心热分流器，粘合剂层和相邻热分流器。
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公开(公告)号：US20150063745A1
公开(公告)日：2015-03-05
申请号：US14472390
申请日：2014-08-29
Applicant: Industrial Technology Research Institute
Inventor： Jui-Ying Lin , Chia-Hsin Chao , Shu-Mei Yang , Chun-Hsing Lee , Chien-Chun Lu
CPC classification number: H01L23/481 , G02B6/12 , G02B6/34 , G02B2006/12061 , H01L21/30604 , H01L21/486 , H01L21/76898 , H01L23/13 , H01L23/147 , H01L23/49827 , H01L23/60 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/80 , H01L25/167 , H01L27/0255 , H01L29/861 , H01L33/20 , H01L33/62 , H01L2224/04 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/06102 , H01L2224/08148 , H01L2224/08238 , H01L2224/16148 , H01L2224/16238 , H01L2224/29294 , H01L2224/32148 , H01L2224/32238 , H01L2224/48091 , H01L2224/48105 , H01L2224/48148 , H01L2224/48229 , H01L2224/73265 , H01L2224/80801 , H01L2224/80805 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83805 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/01322 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1434 , H01L2933/0066 , H01S5/0208 , H01S5/02469 , H01S5/026 , H01S5/34 , H01L2924/00 , H01L2224/80 , H01L2924/00012 , H01L2224/45099
Abstract: An optical coupling module includes a silicon photonic substrate, and an optical waveguide module. The silicon photonic substrate has a first surface and a first grating on the first surface for diffracting the light which passes through the grating. The optical waveguide module is disposed on the silicon photonic substrate, wherein the optical waveguide module includes an optical waveguide having an end disposed in corresponding to the first grating of the silicon photonic substrate. Otherwise, the optical waveguide module has a reflective surface coupled to the end of the optical waveguide and adapted to reflect the light emerging from or incident into the grating to form an optical path between the silicon photonic substrate and the optical waveguide for transmitting the light.
Abstract translation: 光耦合模块包括硅光子衬底和光波导模块。 硅光子衬底具有在第一表面上的第一表面和第一光栅，用于衍射通过光栅的光。 光波导模块设置在硅光子基板上，其中光波导模块包括光波导，该光波导具有与硅光子基板的第一光栅对应的端部。 否则，光波导模块具有耦合到光波导的端部并且适于反射从光栅出射或入射到光栅中的光的反射表面，以在硅光子基板和用于传输光的光波导之间形成光路。
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公开(公告)号：US20150063386A1
公开(公告)日：2015-03-05
申请号：US14472400
申请日：2014-08-29
Applicant: Industrial Technology Research Institute
Inventor： Jui-Ying Lin , Yen-Hsiang Fang , Chia-Hsin Chao , Yao-Jun Tsai , Yi-Chen Lin
CPC classification number: H01L23/481 , G02B6/12 , G02B6/34 , G02B2006/12061 , H01L21/30604 , H01L21/486 , H01L21/76898 , H01L23/13 , H01L23/147 , H01L23/49827 , H01L23/60 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/80 , H01L25/167 , H01L27/0255 , H01L29/861 , H01L33/20 , H01L33/62 , H01L2224/04 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/06102 , H01L2224/08148 , H01L2224/08238 , H01L2224/16148 , H01L2224/16238 , H01L2224/29294 , H01L2224/32148 , H01L2224/32238 , H01L2224/48091 , H01L2224/48105 , H01L2224/48148 , H01L2224/48229 , H01L2224/73265 , H01L2224/80801 , H01L2224/80805 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83805 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/01322 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1434 , H01L2933/0066 , H01S5/0208 , H01S5/02469 , H01S5/026 , H01S5/34 , H01L2924/00 , H01L2224/80 , H01L2924/00012 , H01L2224/45099
Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.
Abstract translation: 提供半导体激光器结构。 半导体激光器包括中心热分流器，环形硅波导，连续热分流器，粘合剂层和激光元件。 中心热分流器位于具有围绕中心热分流的掩埋氧化物层的SOI衬底上。 环形硅波导位于掩埋氧化层上并围绕中心热分流。 环形硅波导包括p型材料部分的P-N结，n型材料部分和其间的耗尽区域。 连续的热分流器覆盖一部分掩埋的氧化物层并且环绕着环形硅波导。 粘合剂层覆盖环形硅波导和掩埋氧化物层。 激光元件覆盖中心热分流器，粘合剂层和相邻热分流器。
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