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公开(公告)号:US12237454B2
公开(公告)日:2025-02-25
申请号:US17529166
申请日:2021-11-17
Applicant: InnoLux Corporation
Inventor: Ming-Chang Lin
Abstract: An electronic device and a manufacturing method thereof are disclosed. The manufacturing method of the electronic device includes following steps: providing a substrate; forming a first compressible layer on the substrate; forming a first bonding pad on the first compressible layer; providing an electronic component; forming a second bonding pad on the electronic component; and bonding the electronic component with the substrate by contacting the second bonding pad with the first bonding pad.
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公开(公告)号:US12191277B2
公开(公告)日:2025-01-07
申请号:US17692047
申请日:2022-03-10
Applicant: Innolux Corporation
Inventor: Ming-Chang Lin
IPC: H01L23/00 , H01L25/075 , H01L25/16
Abstract: A manufacturing method of an electronic apparatus is provided, and the manufacturing method includes following steps. A substrate is provided. A plurality of first bonding pads are formed on the substrate. A plurality of electronic devices are provided, and each of the electronic devices includes at least one second bonding pad. The second bonding pads of the electronic devices corresponding to the first bonding pads are laminated onto the corresponding first bonding pads on the substrate, so as to bond the electronic devices to the substrate. The corresponding first and second bonding pads respectively have bonding surfaces with different surface topographies. The manufacturing method of the electronic apparatus is capable of reducing short circuit during a bonding process or improving a bonding yield.
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公开(公告)号:US11004753B2
公开(公告)日:2021-05-11
申请号:US16244484
申请日:2019-01-10
Applicant: InnoLux Corporation
Inventor: Tung-Kai Liu , Tsau-Hua Hsieh , Wei-Cheng Chu , Chun-Hsien Lin , Chandra Lius , Ting-Kai Hung , Kuan-Feng Lee , Ming-Chang Lin , Tzu-Min Yan , Hui-Chieh Wang
IPC: G06F1/00 , H01L21/66 , H01L33/62 , H01L25/16 , H01L27/12 , H01L33/38 , H01L21/288 , H01L21/67 , B65G43/08 , G01R31/26 , H01L33/00 , G09G3/32 , H01L25/075 , H01L33/50
Abstract: A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate. The transistor is disposed on the substrate, and includes a drain electrode, a gate electrode, and a semiconductor layer. The drain electrode is electrically connected to the light-emitting element. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The light-emitting element does not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.
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公开(公告)号:US10686158B2
公开(公告)日:2020-06-16
申请号:US15916643
申请日:2018-03-09
Applicant: InnoLux Corporation
Inventor: Shun-Yuan Hu , Tsau-Hua Hsieh , Tzu-Min Yan , Ming-Chang Lin , Yu-Hsin Liu , Shu-Ming Kuo , Ming-I Chao
IPC: H01L33/46 , H01L33/58 , H01L33/32 , H01L33/44 , H01L51/52 , H01L25/075 , H01L33/62 , H05B45/00 , H01L25/16 , H01L33/54 , H01L33/20
Abstract: A display device is provided. The display device includes a light-emitting unit. The light-emitting unit includes a light-emitting part, wherein a light extraction structure is disposed on a first surface of the light-emitting part. The light-emitting unit also includes a connective part disposed on a second surface opposite to the first surface of the light-emitting part. The light-emitting unit further includes a protective part surrounding the light-emitting part and the connective part. In addition, the display device includes a substrate having a plurality of active elements and at least one bonding pad, wherein the bonding pad is electrically connected to the corresponding connective part of the light-emitting unit. The roughness of the light extraction structure is greater than or equal to 0.2 μm and less than or equal to 5 μm.
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公开(公告)号:US10312268B2
公开(公告)日:2019-06-04
申请号:US15876383
申请日:2018-01-22
Applicant: InnoLux Corporation
Inventor: Tzu-Min Yan , Ming-Chang Lin , Kuan-Feng Lee
IPC: H01L27/12 , H01L29/786 , G02F1/1333
Abstract: A display device is provided, which includes a substrate including a pixel region; a metal oxide semiconductor transistor disposed over the substrate and including: a metal oxide semiconductor layer, a first gate electrode overlapping with the metal oxide semiconductor layer; and a gate insulating layer disposed between the metal oxide semiconductor layer and the first gate electrode, and the gate insulating layer having a first opening, wherein the first opening and the pixel region overlap; a second insulating layer disposed over the metal oxide semiconductor layer and having a via and a second opening, wherein the second opening and the pixel region overlap; and a pixel electrode electrically connected to the metal oxide semiconductor layer through the via.
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公开(公告)号:US10217678B2
公开(公告)日:2019-02-26
申请号:US15617191
申请日:2017-06-08
Applicant: InnoLux Corporation
Inventor: Tung-Kai Liu , Tsau-Hua Hsieh , Wei-Cheng Chu , Chun-Hsien Lin , Chandra Lius , Ting-Kai Hung , Kuan-Feng Lee , Ming-Chang Lin , Tzu-Min Yan , Hui-Chieh Wang
IPC: G02F1/00 , H01L21/66 , H01L33/62 , H01L25/16 , H01L27/12 , H01L33/38 , H01L21/288 , H01L33/00 , H01L21/67 , B65G43/08 , G01R31/26 , G09G3/32
Abstract: A display device includes a substrate, a first transistor, a second transistor and a conductive connection portion disposed on the substrate. The first transistor is electrically connected to the gate electrode of the second transistor through the conductive connection portion. An insulating layer is disposed on the conductive connection portion. A pixel electrode is disposed on the insulating layer and is electrically connected to the second transistor. The pixel electrode is at least partially overlapped with the conductive connection portion. A light-emitting element is disposed on the pixel electrode. The conductive connection portion and the pixel electrode form a capacitor. The capacitor has an equivalent permittivity and a thickness. The ratio of the equivalent permittivity to the thickness is in a range from 0.4*(1E+5)F/m^2 to 296.48*(1E+5)F/m^2.
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公开(公告)号:US09606407B2
公开(公告)日:2017-03-28
申请号:US14962796
申请日:2015-12-08
Applicant: InnoLux Corporation
Inventor: Kuan-Feng Lee , Ming-Chang Lin , Ying-Tong Lin
IPC: G02F1/136 , G02F1/1368 , H01L27/12 , G02F1/1362 , G02F1/1333
CPC classification number: G02F1/1368 , G02F1/133345 , G02F1/136227
Abstract: A display panel includes a thin film transistor substrate, an opposite substrate and a liquid crystal layer. A thin film transistor is disposed on a substrate and has a drain. A first insulating layer is disposed on the drain and has a first via above the drain. A planarization layer is disposed on the first insulating layer and has a second via above the drain. The first via and the second via are partially overlapped to form an overlap portion. A second insulating layer is disposed on the planarization layer. A pixel electrode layer is disposed on the second insulating layer and in the overlap portion to connect to the drain. The opposite substrate is disposed opposite to the thin film transistor substrate. The liquid crystal layer is disposed between the thin film transistor substrate and the opposite substrate.
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公开(公告)号:US11978678B2
公开(公告)日:2024-05-07
申请号:US17817715
申请日:2022-08-05
Applicant: InnoLux Corporation
Inventor: Tung-Kai Liu , Tsau-Hua Hsieh , Wei-Cheng Chu , Chun-Hsien Lin , Chandra Lius , Ting-Kai Hung , Kuan-Feng Lee , Ming-Chang Lin , Tzu-Min Yan , Hui-Chieh Wang
IPC: G09G3/32 , B65G43/08 , G01R31/26 , H01L21/288 , H01L21/66 , H01L21/67 , H01L25/16 , H01L27/12 , H01L33/00 , H01L33/38 , H01L33/50 , H01L33/62 , H01L25/075
CPC classification number: H01L22/20 , B65G43/08 , G01R31/26 , H01L21/288 , H01L21/67144 , H01L25/167 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1259 , H01L27/1262 , H01L33/0093 , H01L33/38 , H01L33/505 , H01L33/62 , G09G3/32 , G09G2300/0426 , H01L22/14 , H01L25/0753 , H01L33/50 , H01L2933/0066
Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.
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公开(公告)号:US20240135846A1
公开(公告)日:2024-04-25
申请号:US18468752
申请日:2023-09-17
Applicant: Innolux Corporation
Inventor: Kai Cheng , Fang-Ying Lin , Ming-Chang Lin , Tsau-Hua Hsieh
IPC: G09G3/00 , H01L25/075 , H01L33/62
CPC classification number: G09G3/006 , H01L25/0753 , H01L33/62 , G09G2330/12
Abstract: An electronic device and a manufacturing method thereof are provided. The manufacturing method of the electronic device includes the following. A substrate is provided. A plurality of electronic units are transferred to the substrate. The electronic units are inspected to obtain M first defect maps. The M first defect maps are integrated into N second defect maps, where N
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公开(公告)号:US11527688B2
公开(公告)日:2022-12-13
申请号:US16860040
申请日:2020-04-27
Applicant: InnoLux Corporation
Inventor: Ming-Chang Lin , Tzu-Min Yan
Abstract: An electronic device is provided in the present disclosure. The electronic device includes a substrate and a light emitting diode. The light emitting diode is bonded to the substrate through a solder alloy. The solder alloy includes tin and a metal element M, and the metal element M is one of the indium and bismuth. The atomic percentage of tin in the sum of tin and the metal element M ranges from 60% to 90% in the solder alloy.
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