公开(公告)号：US20220278038A1

公开(公告)日：2022-09-01

申请号：US17742816

申请日：2022-05-12

Applicant: Intel Corporation

Inventor： Ji Yong Park ,  Kyu Oh Lee ,  Yikang Deng ,  Zhichao Zhang ,  Liwei Cheng ,  Andrew James Brown ,  Cheng Xu ,  Jiwei Sun

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a core substrate with a first conductive structure having a first thickness on the core substrate, and a second conductive structure having a second thickness on the core substrate, where the first thickness is different than the second thickness.

公开(公告)号：US20210305154A1

公开(公告)日：2021-09-30

申请号：US16829336

申请日：2020-03-25

Applicant: Intel Corporation

Inventor： Ying Wang ,  Yikang Deng ,  Junnan Zhao ,  Andrew James Brown ,  Cheng Xu ,  Kaladhar Radhakrishnan

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L49/02

Abstract: Disclosed herein are magnetic structures in integrated circuit (IC) package supports, as well as related methods and devices. For example, in some embodiments, an IC package support may include a conductive line, a magnetic structure around the conductive line, and material stubs at side faces of the magnetic structure.

公开(公告)号：US20200253037A1

公开(公告)日：2020-08-06

申请号：US16268813

申请日：2019-02-06

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Andrew James Brown ,  Rahul Jain ,  Dilan Seneviratne ,  Praneeth Kumar Akkinepally ,  Frank Truong

IPC: H05K1/02 ,  H05K1/11 ,  H01L23/498

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a substrate layer having a surface, wherein the substrate layer includes a photo-imageable dielectric (PID) and an electroless catalyst; a first conductive trace having a first thickness on the surface of the substrate layer; and a second conductive trace having a second thickness on the surface of the substrate layer, wherein the first thickness is greater than the second thickness.