LITHOGRAPHICALLY DEFINED VERTICAL INTERCONNECT ACCESS (VIA) IN DIELECTRIC POCKETS IN A PACKAGE SUBSTRATE

    公开(公告)号:US20190304889A1

    公开(公告)日:2019-10-03

    申请号:US15941903

    申请日:2018-03-30

    Abstract: Techniques for fabricating a package substrate comprising a via, a conductive line, and a pad are described. The package substrate can be included in a semiconductor package. For one technique, a package substrate includes: a pad in a dielectric layer; a via; and a conductive line. The via and the conductive line can be part of a structure. Alternatively, the conductive line can be adjacent to the via. The dielectric layer can include a pocket above the pad. One or more portions of the via may be formed in the pocket above the pad. Zero or more portions of the via can be formed on the dielectric layer outside the pocket. In some scenarios, no pad is above the via. The package substrate provides several advantages. One exemplary advantage is that the package substrate can assist with increasing an input/output density per millimeter per layer (IO/mm/layer) of the package substrate.

    ORGANIC FILM STRESS BUFFER FOR INTERFACE OF METAL AND DIELECTRIC

    公开(公告)号:US20230098501A1

    公开(公告)日:2023-03-30

    申请号:US17485375

    申请日:2021-09-25

    Abstract: A system includes a metallic contact integrated onto a semiconductor integrated circuit substrate with a stress buffer dielectric between the contact and the bulk dielectric. The bulk dielectric typically covers an integrated circuit metal layer to provide electrical isolation of the circuitry. The semiconductor circuit can include a trace that connects the contact to a package pad to enable external access to the signal from off the semiconductor circuit. The stress buffer dielectric has higher elongation and lower filler loading relative to the bulk dielectric, which makes the stress buffer more pliable. The stress buffer is disposed between the contact and the bulk dielectric to improve stress response, reducing the possibility of delamination of the contact from the bulk dielectric.

    NON-ROUGHENED CU TRACE WITH ANCHORING TO REDUCE INSERTION LOSS OF HIGH SPEED IO ROUTING IN PACKAGE SUBSTRATE

    公开(公告)号:US20190295937A1

    公开(公告)日:2019-09-26

    申请号:US15927047

    申请日:2018-03-20

    Abstract: Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a trace disposed on a conductive layer. The semiconductor package has one or more adhesion anchoring points and a plurality of portions on the trace. An adhesion anchoring point is between two portions on the trace. A surface roughness of an adhesion anchoring point is greater than a surface roughness of a portion on the trace. The trace may be a high-speed input/output (HSIO) trace. The semiconductor package may include via pads disposed on each end of the trace, and a dielectric disposed on the trace. The dielectric is patterned to form openings on the dielectric that expose second portions on the trace. The dielectric remains over the portions. The semiconductor package may have a chemical treatment disposed on the exposed openings on the trace to form the adhesion anchoring points.

    METHOD TO ENABLE 30 MICRONS PITCH EMIB OR BELOW

    公开(公告)号:US20190027431A1

    公开(公告)日:2019-01-24

    申请号:US15654399

    申请日:2017-07-19

    Abstract: A package substrate and package assembly including a package substrate including a substrate body including electrical routing features therein and a surface layer and a plurality of first and second contact points on the surface layer including a first pitch and a second pitch, respectively, wherein the plurality of first contact points and the plurality of second contact points are continuous posts to the respective ones of the electrical routing features. A method including forming first conductive vias in a package assembly, wherein the first conductive vias include substrate conductive vias to electrical routing features in a package substrate and bridge conductive vias to bridge surface routing features of a bridge substrate; forming a first surface layer and a second surface layer on the package substrate; and forming second conductive vias through each of the first surface layer and the second surface layer to the bridge conductive vias.

    ARCHITECTURE TO MANAGE FLI BUMP HEIGHT DELTA AND RELIABILITY NEEDS FOR MIXED EMIB PITCHES

    公开(公告)号:US20210366860A1

    公开(公告)日:2021-11-25

    申请号:US16880483

    申请日:2020-05-21

    Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate and a bridge substrate embedded in the package substrate. In an embodiment, first pads are over the package substrate, where the first pads have a first pitch, and second pads are over the bridge substrate, where the second pads have a second pitch that is smaller than the first pitch. In an embodiment, a barrier layer is over individual ones of the second pads. In an embodiment, reflown solder is over individual ones of the first pads and over individual ones of the second pads. In an embodiment, a first standoff height of the reflown solder over the first pads is equal to a second standoff height of the reflown solder over the second pads.

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