公开(公告)号：US12239416B2

公开(公告)日：2025-03-04

申请号：US17617058

申请日：2020-06-02

Applicant: KANEKA CORPORATION

Inventor： Toshihiko Uto

IPC: A61B5/00 ,  A61N5/06 ,  A61N5/067

Abstract: A light therapy diagnostic device comprising a shaft, and an optical waveguide disposed in a lumen of the shaft and being movable forward and backward in a longitudinal direction, wherein: the optical waveguide guides a first light and a second light; the shaft has a lateral emission window which allows the first light and the second light to be emitted toward a lateral direction and a distal emission window which allows the first light to be emitted toward a distal direction; a first mirror is provided on a distal end part of the optical waveguide and reflects the first light toward a lateral direction of the shaft; and a second mirror is provided on an inner surface of the shaft, located distal to a distal end of the lateral emission window, and reflects the first light reflected by the first mirror toward a distal direction of the shaft.

公开(公告)号：US20200028003A1

公开(公告)日：2020-01-23

申请号：US16585038

申请日：2019-09-27

Applicant: KANEKA CORPORATION

Inventor： Toshihiko Uto ,  Daisuke Adachi

IPC: H01L31/0236 ,  H01L31/0747 ,  H01L31/20

Abstract: A solar cell includes a crystal substrate which has a major surface on a light reception side provided with a first texture surface and a major surface on a non-light reception side provided with a second texture surface. The second texture surface occupies 20% or more of the area of the major surface on the non-light reception side.

公开(公告)号：US10388821B2

公开(公告)日：2019-08-20

申请号：US15971744

申请日：2018-05-04

Applicant: Kaneka Corporation

Inventor： Daisuke Adachi ,  Toru Terashita ,  Toshihiko Uto

IPC: H01L31/18 ,  H01L21/288 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/0236 ,  H01L31/20

Abstract: A method for manufacturing a crystalline silicon-based solar cell includes forming a first intrinsic silicon-based thin-film on a first principal surface and a lateral surface of an n-type crystalline silicon substrate, forming a p-type silicon-based thin-film on the first intrinsic silicon-based thin-film, forming a first transparent electrode layer on an entire region of the first principal surface except for a peripheral portion, forming a second intrinsic silicon-based thin-film on a second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming an n-type silicon-based thin-film on the second intrinsic silicon-based thin-film, forming a second transparent electrode layer on an entire region of the second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming a patterned collecting electrode on the first transparent electrode layer, and forming a plated metal electrode on the second transparent electrode layer by an electroplating method.

公开(公告)号：US10333012B2

公开(公告)日：2019-06-25

申请号：US15560596

申请日：2016-01-22

Applicant: KANEKA CORPORATION

Inventor： Toshihiko Uto ,  Takashi Suezaki ,  Wataru Yoshida

IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/0747

Abstract: The method for manufacturing a crystalline silicon substrate for a solar cell includes: forming a texture on the surface of a single-crystalline silicon substrate by bringing an alkali solution and the surface of the single-crystalline silicon substrate into contact with each other; bringing an acidic solution and the surface of the single-crystalline silicon substrate into contact with each other to perform an acid treatment thereon; and then by bringing ozone water and the surface of the single-crystalline silicon substrate into contact with each other to perform an ozone treatment thereon. One aspect of embodiment is that the acidic solution used for the acid treatment is hydrochloric acid. Another aspect of embodiment is that the ozone treatment is performed by immersing the single-crystalline silicon substrate into the ozone water bath.

公开(公告)号：US20170200852A1

公开(公告)日：2017-07-13

申请号：US15473045

申请日：2017-03-29

Applicant: KANEKA CORPORATION

Inventor： Toshihiko Uto ,  Daisuke Adachi

IPC: H01L31/18 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/0236

CPC classification number: H01L31/1804 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/0747 ,  H01L31/1868 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: A manufacturing method includes steps of forming a texture on a surface of a single-crystalline silicon substrate, cleaning the surface of the single-crystalline silicon substrate using ozone, depositing an intrinsic silicon-based layer on the texture on the single-crystalline silicon substrate, and depositing a conductive silicon-based layer on the intrinsic silicon-based layer, in this order. The single-crystalline silicon substrate before deposition of the intrinsic silicon-based layer has a texture size of less than 5 μm. A recess portion of the texture has a curvature radius of less than 5 nm. After deposition of at least a part of the intrinsic silicon-based layer and before deposition of the conductive silicon-based layer, the intrinsic silicon-based layer is subjected to a plasma treatment in an atmosphere of a gas mainly composed of hydrogen.