THERMAL IMPROVEMENTS FOR MEMORY SUB-SYSTEMS
    11.
    发明公开

    公开(公告)号:US20240069581A1

    公开(公告)日:2024-02-29

    申请号:US18235169

    申请日:2023-08-17

    CPC classification number: G05D23/19 G06F1/20 G06F12/0246 G06F2212/7201

    Abstract: Some memory sub-systems are operated in high temperature and low airflow environments. As a safeguard, thermal throttling may limit throughput on a memory sub-system when a predetermined temperature is reached or exceeded. Improving heat dissipation increases the amount of time a memory sub-system can operate without initiating thermal throttling. Adding a phase-change material (PCM) with a melting temperature above the ambient temperature but below the thermal throttling temperature to a memory sub-system increases the amount of heat the memory sub-system can generate before the temperature reaches the thermal throttling temperature. Thermally coupling components with a heat spreading sheet causes the temperature of the components to vary less than when the components transfer heat by air. Thus, a component that generates less heat may be used to absorb heat generated by another component, increasing the amount of time before any component reaches the thermal throttling temperature.

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