公开(公告)号：US20230069476A1

公开(公告)日：2023-03-02

申请号：US17592065

申请日：2022-02-03

Applicant: Micron Technology, Inc.

Inventor： Kelvin Tan Aik Boo ,  Hong Wan Ng ,  Seng Kim Ye ,  Chin Hui Chong

IPC: H01L25/065 ,  H01L25/00

Abstract: Semiconductor devices having three-dimensional bonding schemes and associated systems and methods are disclosed herein. In some embodiments, the semiconductor device includes a package substrate, a stack of semiconductor dies carried by the package substrate, and an interconnect module carried by the package substrate adjacent the stack of semiconductor dies. The stack of semiconductor dies can include a first die carried by the package substrate and a second die carried by the first die. Meanwhile, the interconnect module can include at least a first tier and a second tier. The first tier can be carried by and electrically coupled to the package substrate, and the second tier can be carried by and electrically coupled to the first tier. In turn, the second die can be electrically coupled to the second tier.

公开(公告)号：US20220352052A1

公开(公告)日：2022-11-03

申请号：US17243466

申请日：2021-04-28

Applicant: Micron Technology, Inc.

Inventor： Hong Wan Ng ,  Chin Hui Chong ,  Hem P. Takiar ,  Seng Kim Ye ,  Kelvin Tan Aik Boo

IPC: H01L23/48 ,  H01L23/498 ,  H01L49/02 ,  H01L27/08

Abstract: Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods are disclosed herein. In one embodiment, a substrate includes a first pair and a second of electrical contacts on a first surface of the substrate. The first pair of electrical contacts can be configured to receive a first surface-mount capacitor, and the second pair of electrical contacts can be configured to receive a second surface-mount capacitor. The first pair of electrical contacts can be spaced apart by a first space, and the second pair of electrical contacts can be spaced apart by a second space. The first and second spaces can correspond to corresponding to first and second distances between electrical contacts of first and second surface-mount capacitors.

公开(公告)号：US11101262B2

公开(公告)日：2021-08-24

申请号：US16678195

申请日：2019-11-08

Applicant: Micron Technology, Inc.

Inventor： Hong Wan Ng ,  Seng Kim Ye

IPC: H01L25/00 ,  H01L25/18 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31

Abstract: Stacked semiconductor die assemblies with support members and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first semiconductor die attached to the package substrate, and a plurality of support members also attached to the package substrate. The plurality of support members can include a first support member and a second support member disposed at opposite sides of the first semiconductor die, and a second semiconductor die can be coupled to the support members such that at least a portion of the second semiconductor die is over the first semiconductor die.

公开(公告)号：US20170170149A1

公开(公告)日：2017-06-15

申请号：US15431649

申请日：2017-02-13

Applicant: Micron Technology, Inc.

Inventor： Seng Kim Ye ,  Hong Wan Ng

IPC: H01L25/065 ,  G06F13/16 ,  H01L25/00 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L25/0657 ,  G06F13/1668 ,  G06F13/1694 ,  H01L22/14 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/04 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/03 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/13083 ,  H01L2224/1319 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/2939 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/81855 ,  H01L2224/81856 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/83874 ,  H01L2224/92227 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/14 ,  H01L2924/143 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/1443 ,  H01L2924/15184 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/83101 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2224/83

Abstract: Semiconductor devices with controllers under stacks of semiconductor packages and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate, a controller attached to the package substrate, and at least two semiconductor packages disposed over the controller. Each semiconductor package includes a plurality of semiconductor dies. The semiconductor device further includes an encapsulant material encapsulating the controller and the at least two semiconductor packages.

公开(公告)号：US20240282751A1

公开(公告)日：2024-08-22

申请号：US18440444

申请日：2024-02-13

Applicant: Micron Technology, Inc.

Inventor： Ling Pan ,  Seng Kim Ye ,  Kelvin Aik Boo Tan ,  Hong Wan Ng ,  See Hiong Leow ,  Chong C. Hui

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L25/0657 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/08 ,  H01L24/48 ,  H01L2224/08146 ,  H01L2224/08225 ,  H01L2224/48132 ,  H01L2224/48147 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/182 ,  H01L2924/3511

Abstract: A variety of applications can include systems with packaged electronic devices having multiple dies arranged on a substrate with a downset design. A substrate with a downset design can include an upper portion and a lower portion with a downset portion connecting the upper portion to the lower portion. The downset portion can include through vias to provide conductive paths between the lower portion and the upper portion. Dies can be positioned with a region defined by walls of the downset portion with a non-conductive film covering the dies in the region defined by walls of the downset portion. Additional dies can be positioned on the non-conductive film and the upper portion of the substrate. A packaged electronic device having a substrate with a downset design can be implemented to raise the neutral axis of the packaged electronic device to near the top surface of the dies.

公开(公告)号：US20240071980A1

公开(公告)日：2024-02-29

申请号：US17899550

申请日：2022-08-30

Applicant: Micron Technology, Inc.

Inventor： Kelvin Tan Aik Boo ,  Seng Kim Ye ,  Hong Wan Ng ,  Ling Pan ,  See Hiong Leow

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L24/48 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/32 ,  H01L24/73 ,  H01L25/0657 ,  H01L23/49816 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48235 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06562 ,  H01L2924/1434 ,  H01L2924/3512

Abstract: Stacked semiconductor devices, and related systems and methods, are disclosed herein. In some embodiments, the stacked semiconductor device includes a package substrate having at least a first layer and a second layer, an interconnect extending through the package substrate, a stack of dies carried by the package substrate, and one or more wirebonds electrically coupling the stack of dies to package substrate. Each of the layers of the package substrate can include a section of the interconnect with a frustoconical shape. Each of the sections can be directly coupled together. Further, the section in an uppermost layer of the package substrate is exposed at an upper surface of the package substrate. The wirebonds can be directly coupled to the exposed surface of the uppermost section.

公开(公告)号：US20230378129A1

公开(公告)日：2023-11-23

申请号：US17750225

申请日：2022-05-20

Applicant: Micron Technology, Inc.

Inventor： Chin Hui Chong ,  Seng Kim Ye ,  Kelvin Tan Aik Boo ,  Hong Wan Ng

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L25/0652 ,  H01L25/50 ,  H01L24/48 ,  H01L24/49 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06562 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48147 ,  H01L2224/48221 ,  H01L2224/4903 ,  H01L2224/49052 ,  H01L2224/49177

Abstract: A semiconductor package including a package substrate with an upper surface, a controller, and a die stack. The controller and the die stack are at the upper surface. The die stack includes a shingled sub-stack of semiconductor dies, a reverse-shingled sub-stack of semiconductor dies, and a bridging chip. The bridging chip is bonded between the shingled sub-stack and the reverse-shingled sub-stack, and has an internal trace. A first wire segment is bonded between the controller and a first end of the bridging chip, and a second wire segment is bonded between a second end of the bridging chip and each semiconductor die of the shingled sub-stack. The internal trace electrically couples the first and second wire segments. Additionally, a third wire segment is bonded between the controller and each semiconductor die of the reverse-shingled sub-stack.

公开(公告)号：US20230378128A1

公开(公告)日：2023-11-23

申请号：US17750200

申请日：2022-05-20

Applicant: Micron Technology, Inc.

Inventor： Seng Kim Ye ,  Kelvin Tan Aik Boo ,  Hong Wan Ng ,  Chin Hui Chong

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L25/0652 ,  H01L25/50 ,  H01L24/48 ,  H01L24/49 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06562 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48147 ,  H01L2224/48221 ,  H01L2224/4903 ,  H01L2224/49052 ,  H01L2224/49177

Abstract: A semiconductor package having a package substrate including an upper surface, a controller, a first die stack, and a second die stack. The controller, the first die stack, and the second die stack are at the upper surface. The first die stack includes a first shingled sub-stack and a first reverse-shingled sub-stack. The first die stack also includes a first bridging chip between the first shingled and reverse-shingled sub-stacks. The second die stack similarly includes a second shingled sub-stack and a second reverse-shingled sub-stack. The second die stack also includes a second bridging chip bonded to the top of the second reverse-shingled sub-stack. At least a portion of a bottom semiconductor die of the first reverse-shingled sub-stack is vertically aligned with a semiconductor die of the second shingled sub-stack and a semiconductor die of the second reverse-shingled sub-stack.

公开(公告)号：US11710722B2

公开(公告)日：2023-07-25

申请号：US17233129

申请日：2021-04-16

Applicant: Micron Technology, Inc.

Inventor： Kelvin Tan Aik Boo ,  Seng Kim Ye ,  Chin Hui Chong ,  Hong Wan Ng

IPC: H01L25/065 ,  H01L23/498 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L23/4985 ,  H01L24/48 ,  H01L25/50 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2225/0651 ,  H01L2225/06506 ,  H01L2225/06562 ,  H01L2225/06572

Abstract: A semiconductor device includes a rigid flex circuit that has a first rigid region and a second rigid region that are electrically connected by a flexible portion. A first die is mounted to a first side of the first rigid region. A second die is mounted to a second side of the second rigid region. The first and second sides are on opposite sides of the rigid flex circuit. The flexible portion is bent to hold the first and second rigid regions in generally vertical alignment with each other.

公开(公告)号：US11658154B2

公开(公告)日：2023-05-23

申请号：US16909522

申请日：2020-06-23

Applicant: Micron Technology, Inc.

Inventor： Seng Kim Ye ,  Hong Wan Ng

IPC: H01L25/065 ,  H01L25/18 ,  H01L25/00 ,  H01L23/00 ,  G06F13/16 ,  H01L23/31 ,  H01L21/66 ,  H01L25/03

CPC classification number: H01L25/0657 ,  G06F13/1668 ,  G06F13/1694 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/04 ,  H01L24/16 ,  H01L24/32 ,  H01L25/18 ,  H01L25/50 ,  H01L22/14 ,  H01L24/13 ,  H01L24/29 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/03 ,  H01L2224/04042 ,  H01L2224/1319 ,  H01L2224/13083 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2939 ,  H01L2224/29294 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/81855 ,  H01L2224/81856 ,  H01L2224/83 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/83874 ,  H01L2224/92227 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06506 ,  H01L2225/06562 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/1033 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/143 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/1443 ,  H01L2924/15184 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2924/00012 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/92247 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/29294 ,  H01L2924/00014 ,  H01L2224/2939 ,  H01L2924/00014 ,  H01L2224/83101 ,  H01L2924/00014 ,  H01L2224/2919 ,  H01L2924/0665 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2224/83855 ,  H01L2924/00014 ,  H01L2224/83874 ,  H01L2924/00014 ,  H01L2224/291 ,  H01L2924/014 ,  H01L2224/1319 ,  H01L2924/00014 ,  H01L2224/81856 ,  H01L2924/00014 ,  H01L2224/81855 ,  H01L2924/00014 ,  H01L2224/92227 ,  H01L2224/83 ,  H01L2924/15311 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00

Abstract: Semiconductor devices with controllers under stacks of semiconductor packages and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate, a controller attached to the package substrate, and at least two semiconductor packages disposed over the controller. Each semiconductor package includes a plurality of semiconductor dies. The semiconductor device further includes an encapsulant material encapsulating the controller and the at least two semiconductor packages.