STRESS-RELEASING SOLDER MASK PATTERN FOR SEMICONDUCTOR DEVICES AND RELATED SYSTEMS AND METHODS

    公开(公告)号:US20240057265A1

    公开(公告)日:2024-02-15

    申请号:US17885338

    申请日:2022-08-10

    CPC classification number: H05K3/3452 H05K1/0271 H05K3/3436 H05K2201/099

    Abstract: Substrates having stress-releasing features, and associated systems and methods are disclosed herein. In some embodiments, the substrate includes a core layer, a metallization layer formed on an outer surface of the core layer, and a solder mask formed over the metallization layer and the outer surface. The metallization layer can include at least one bond pad and the solder mask can include a first opening exposing the bond pad. The first opening can be surrounded by a bonding region of the solder mask that thermally interfaces with the bond pad and/or any conductive structure bonded thereon. The solder mask can also include one or more second openings adjacent the first opening. Each of the second openings provides space for the solder mask to expand into to release stress due to thermal expansions of the bond pad, the solder mask, and/or the conductive structure during manufacturing and/or operation.

    Through stack bridge bonding devices and associated methods

    公开(公告)号:US12237301B2

    公开(公告)日:2025-02-25

    申请号:US17750225

    申请日:2022-05-20

    Abstract: A semiconductor package including a package substrate with an upper surface, a controller, and a die stack. The controller and the die stack are at the upper surface. The die stack includes a shingled sub-stack of semiconductor dies, a reverse-shingled sub-stack of semiconductor dies, and a bridging chip. The bridging chip is bonded between the shingled sub-stack and the reverse-shingled sub-stack, and has an internal trace. A first wire segment is bonded between the controller and a first end of the bridging chip, and a second wire segment is bonded between a second end of the bridging chip and each semiconductor die of the shingled sub-stack. The internal trace electrically couples the first and second wire segments. Additionally, a third wire segment is bonded between the controller and each semiconductor die of the reverse-shingled sub-stack.

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