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公开(公告)号：US20200244034A1
公开(公告)日：2020-07-30
申请号：US16847730
申请日：2020-04-14
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard
Abstract: A laser diode includes a semiconductor body having a substrate and a semiconductor layer sequence arranged on the substrate, which includes an active zone that generates electromagnetic radiation, wherein the semiconductor body has a first main surface and a second main surface opposite the first main surface and at least one first and second laser facet, which are respectively arranged transversely to the first and second main surfaces, and at least one structured facet region located at a transition between the first main surface and at least one of the first and second laser facets, and the structured facet region includes at least a strained compensation layer or a recess.
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公开(公告)号：US11923660B2
公开(公告)日：2024-03-05
申请号：US16973452
申请日：2019-06-06
Applicant: OSRAM OLED GmbH
Inventor： Bernhard Stojetz , Christoph Eichler , Alfred Lell , Sven Gerhard
CPC classification number: H01S5/18308 , H01S5/041 , H01S5/18361 , H01S5/4093 , H01S2301/176
Abstract: An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.
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公开(公告)号：US20230299562A1
公开(公告)日：2023-09-21
申请号：US18322661
申请日：2023-05-24
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bemhard Stojetz
CPC classification number: H01S5/22 , H01S5/04253 , H01S5/04254 , H01S5/3211 , H01S5/32341 , H01S2301/16
Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.
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公开(公告)号：US11581707B2
公开(公告)日：2023-02-14
申请号：US17324416
申请日：2021-05-19
Applicant: OSRAM OLED GmbH
Inventor： Clemens Vierheilig , Andreas Löffler , Sven Gerhard
Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.
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公开(公告)号：US20210273416A1
公开(公告)日：2021-09-02
申请号：US17324416
申请日：2021-05-19
Applicant: OSRAM OLED GmbH
Inventor： Clemens Vierheilig , Andreas Löffler , Sven Gerhard
IPC: H01S5/40 , H01S5/042 , H01S5/00 , H01S5/02345
Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.
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Patent Agency Ranking
公开(公告)号：US10938180B2
公开(公告)日：2021-03-02
申请号：US16834037
申请日：2020-03-30
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Löffler
Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.
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公开(公告)号：US10833475B2
公开(公告)日：2020-11-10
申请号：US16081881
申请日：2017-03-03
Applicant: OSRAM OLED GmbH
Inventor： Christoph Eichler , Sven Gerhard
IPC: H01S5/022 , H01L33/48 , H01L33/20 , H01L33/44 , H01L33/62 , H01L33/64 , H01S5/024 , H01S5/028 , H01S5/10 , H01S5/22 , H01S5/40
Abstract: An optoelectronic lighting device includes an optoelectronic semiconductor chip including a top side and an underside opposite the top side, wherein a semiconductor layer sequence is formed between the top side and the underside, the semiconductor layer sequence includes an active zone that generates electromagnetic radiation, and a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier is formed at one of the top side and the underside.
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公开(公告)号：US10811843B2
公开(公告)日：2020-10-20
申请号：US15761419
申请日：2016-09-27
Applicant: OSRAM OLED GMBH
Inventor： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Loeffler , Christoph Eichler
Abstract: The disclosure relates to a semiconductor laser includes a semiconductor layer sequence with an-n-type n-region, a p-type p-region and an active zone lying between the two for the purpose of generating laser radiation. A p-contact layer that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region for the purpose of current input. An electrically-conductive metallic p-contact structure is applied directly to the p-contact layer. The p-contact layer is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer during operation of the semiconductor laser. Two facets of the semiconductor layer sequence form resonator end surfaces for the laser radiation.
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公开(公告)号：US10784653B2
公开(公告)日：2020-09-22
申请号：US16079678
申请日：2017-02-23
Applicant: OSRAM OLED GmbH
Inventor： Andreas Loeffler , Clemens Vierheilig , Sven Gerhard
IPC: H01S5/22 , H01S5/40 , H01L25/16 , H01L33/00 , H01L33/22 , H01L33/24 , H01L33/32 , H01S5/02 , H01S5/042 , H01S5/343 , H01S5/323 , H01S5/227
Abstract: A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.
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公开(公告)号：US10673201B2
公开(公告)日：2020-06-02
申请号：US16311868
申请日：2017-06-07
Applicant: OSRAM OLED GmbH
Inventor： Christoph Eichler , Sven Gerhard , Alfred Lell , Bernhard Stojetz
Abstract: A semiconductor light source includes a laser and at least one phosphor, wherein the laser includes a semiconductor body having at least one active zone that generates laser radiation, at least one resonator having resonator mirrors and having a longitudinal axis is formed in the laser so that the laser radiation is guided and amplified along the longitudinal axis during operation and the active zone is located at least partially in the resonator, and the phosphor is optically coupled to the resonator in a gap-free manner so that in the direction transverse to the longitudinal axis at least part of the laser radiation is introduced into the phosphor and converted into a secondary radiation having a greater wavelength.
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