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公开(公告)号：US11315848B2
公开(公告)日：2022-04-26
申请号：US16703037
申请日：2019-12-04
Applicant: ROHM CO., LTD.
Inventor： Isamu Nishimura
IPC: H01L23/31 , H01L23/538 , H01L23/00 , H01L21/48 , H01L21/56 , H01L23/29 , H01L23/498 , H01L23/14 , H01L23/373 , H01L25/065 , H01L21/60
Abstract: A semiconductor device, includes: a semiconductor element including an element main surface and an element back surface facing opposite sides in a thickness direction; a wiring part electrically connected to the semiconductor element; an electrode pad electrically connected to the wiring part; a sealing resin configured to cover a part of the semiconductor element; and a first metal layer configured to make contact with the element back surface and exposed from the sealing resin, wherein the semiconductor element overlaps the first metal layer when viewed in the thickness direction.
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公开(公告)号：US20190252290A1
公开(公告)日：2019-08-15
申请号：US16269816
申请日：2019-02-07
Applicant: Rohm Co., Ltd.
Inventor： Isamu Nishimura
IPC: H01L23/373 , H01L23/31 , H01L23/498 , H01L21/56 , H01L21/288
CPC classification number: H01L23/3735 , H01L21/288 , H01L21/56 , H01L23/3157 , H01L23/49838 , H01L23/49866
Abstract: A semiconductor device includes a semiconductor element, a wiring portion, an electrode pad, a sealing resin and a heat dissipation layer. The semiconductor element has a front surface and a back surface opposite to the front surface in a thickness direction of the semiconductor device. The wiring portion is electrically connected to the semiconductor element. The electrode pad is electrically connected to the wiring portion. The sealing resin covers the semiconductor element. The heat dissipation layer is held in contact with the back surface of the semiconductor element and exposed from the sealing resin. The semiconductor element overlaps with the first heat dissipation layer as viewed in the thickness direction.
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公开(公告)号：US10141500B2
公开(公告)日：2018-11-27
申请号：US15640923
申请日：2017-07-03
Applicant: ROHM CO., LTD.
Inventor： Isamu Nishimura , Michihiko Mifuji , Satoshi Nakagawa
Abstract: A magnetoelectric converting element includes a substrate, a magnetosensitive layer, a first insulating layer, an underlying conductive layer, a second insulating layer, and a terminal conductor. The magnetosensitive layer is formed on the substrate. The first insulating layer is formed with first opening for exposing a part of the magnetosensitive layer. The underlying conductive layer is formed on the exposed part of the magnetosensitive layer. The second insulating layer is formed with a second opening for exposing a part of the underlying conductive layer. The terminal conductor is formed on the exposed part of the underlying conductive layer. The second opening is arranged to be located inside the first opening in plan view.
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公开(公告)号：US09704840B2
公开(公告)日：2017-07-11
申请号：US15226743
申请日：2016-08-02
Applicant: ROHM CO., LTD.
Inventor： Isamu Nishimura , Makoto Murata
IPC: H01L31/12 , H01L33/00 , H01L25/16 , H01L33/62 , H01L33/54 , H01L33/56 , H01L31/153 , H01L25/00 , G01S7/481
CPC classification number: H01L25/167 , G01S7/481 , H01L25/50 , H01L31/12 , H01L31/125 , H01L31/147 , H01L31/153 , H01L33/54 , H01L33/56 , H01L33/62 , H01L2224/16225 , H01L2924/15156 , H01L2924/15159 , H01L2933/0033
Abstract: The present invention provides an optical semiconductor device for improving minimization and increase of detection precision. An optical semiconductor device A1 of the present invention includes: a substrate 1, including a semiconductor material, and including a main surface 111 and a back surface 112; a semiconductor light-emitting element 7A at the substrate; a semiconductor light-receiving element 7B at the substrate; a conductive layer 3, conducting the semiconductor light-emitting element 7A and the semiconductor light-receiving element 7B; and an insulating layer 2 between at least a portion of the conductive layer 3 and the substrate; wherein the substrate 1 includes a recess 14 recessed from the main surface 111 and including a bottom surface 142A of a light-emitting side recess where the semiconductor light-emitting element 7A is disposed, and a bottom surface 142B of a light-receiving side recess where the semiconductor light-receiving element 7B is disposed; a light-emitting side transparent portion 18A for light from the semiconductor light-emitting element 7A to pass through the bottom surface 142A of the light-emitting side recess to the back surface 112; and a light-receiving side transparent portion 18B for light from the back surface 112 to pass through the bottom surface 142B of the light-receiving side recess to the semiconductor light-receiving element 7B.
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公开(公告)号：US09698092B2
公开(公告)日：2017-07-04
申请号：US14757968
申请日：2015-12-24
Applicant: ROHM CO., LTD.
Inventor： Isamu Nishimura
CPC classification number: H01L23/49827 , H01L21/486 , H01L23/13 , H01L23/147 , H01L23/24 , H01L23/3107 , H01L23/49811 , H01L2224/16225 , H01L2924/0002 , H01L2924/181 , H05K1/162 , H05K1/167 , H01L2924/00012 , H01L2924/00
Abstract: An electronic device, suitable for achieving a smaller size, includes a semiconductor substrate having a main surface and a back surface opposite to the main surface, a main electronic element arranged on the substrate, and a conducting layer electrically connected to the main electronic element. The substrate is formed with an element arrangement recessed portion that is recessed from the main surface and in which the main electronic element is arranged. The element arrangement recessed portion has a bottom surface facing in the thickness direction, and a side surface inclined with respect to the thickness direction of the substrate. The electronic device includes an auxiliary electronic element formed on the side surface of the element arrangement recessed portion.
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Patent Agency Ranking
公开(公告)号：US09136216B2
公开(公告)日：2015-09-15
申请号：US14181100
申请日：2014-02-14
Applicant: ROHM CO., LTD.
Inventor： Isamu Nishimura , Michihiko Mifuji , Kazumasa Nishio
IPC: H01L21/20 , H01L23/522 , H01L27/01 , H01L49/02 , H01L23/525 , H01L23/532
CPC classification number: H01L23/5228 , H01L21/76805 , H01L21/76829 , H01L21/7687 , H01L23/522 , H01L23/5223 , H01L23/5226 , H01L23/5258 , H01L23/528 , H01L23/53223 , H01L23/5329 , H01L27/016 , H01L28/24 , H01L28/60 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.
Abstract translation: 半导体器件具有选择性地设置在半导体衬底上的电阻器区域和布线区域。 在该半导体装置中，在半导体基板的上方形成第二层间绝缘膜，在电阻区域的第二层间绝缘膜上设置薄膜电阻。 在第二层间绝缘膜中形成有从下方接触薄膜电阻器的通孔。 在配线区域的第二层间绝缘膜上配置有布线。 从上方覆盖薄膜电阻器的虚拟布线配置在与布线相同层的第三布线层中，并且绝缘膜介于薄膜电阻和虚拟布线之间。
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公开(公告)号：US11305553B2
公开(公告)日：2022-04-19
申请号：US16899059
申请日：2020-06-11
Applicant: ROHM CO., LTD.
Inventor： Isamu Nishimura
IPC: B41J2/335
Abstract: A thermal print head includes: a substrate; a resistor layer supported by the substrate and including a plurality of heat generating portions arranged in a main scanning direction; a wiring layer supported by the substrate and forming an energizing path to the plurality of heat generating portions; and an insulating layer interposed between the substrate and the resistor layer, wherein the substrate has a cavity portion overlapping the plurality of heat generating portions when viewed in a thickness direction of the substrate.
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公开(公告)号：US20190341323A1
公开(公告)日：2019-11-07
申请号：US16394505
申请日：2019-04-25
Applicant: Rohm Co., Ltd.
Inventor： Isamu Nishimura
IPC: H01L23/31 , H01L21/56 , H01L23/495 , H01L23/367
Abstract: A semiconductor device includes a semiconductor element, a first substrate, a first electrode, a second electrode and a sealing resin. The first substrate has a first front surface and a first back surface that are spaced apart from each other in a thickness direction. The semiconductor element is mounted on the first main surface. The first electrode includes a first conductive portion and a second conductive portion. The first conductive portion is formed on a portion of the first front surface. The second conductive portion is connected to the first conductive portion and overlaps with the first substrate as viewed in a first direction perpendicular to the thickness direction. The sealing resin covers the semiconductor element. The second electrode is exposed from the sealing resin and electrically connected to the first electrode. The second electrode is in contact with the second conductive portion.
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公开(公告)号：US10470310B2
公开(公告)日：2019-11-05
申请号：US15464516
申请日：2017-03-21
Applicant: ROHM CO., LTD.
Inventor： Isamu Nishimura
Abstract: An electronic component includes a first functional element including a pair of first connecting electrode portions formed on a first mounting surface, a pair of pillar electrodes connected to the corresponding first connecting electrode portions, a second functional element that includes a pair of second connecting electrode portions formed on a second mounting surface and that is arranged in a space defined by the first mounting surface of the first functional element and the pair of pillar electrodes, a pair of pad electrodes connected to the corresponding second connecting electrode portions, and a sealing resin that seals the pair of pillar electrodes, the pair of pad electrodes and the second functional element so as to expose the first lower surfaces of the pair of pillar electrodes and the second lower surfaces of the pair of pad electrodes.
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公开(公告)号：US10347550B2
公开(公告)日：2019-07-09
申请号：US15686930
申请日：2017-08-25
Applicant: ROHM CO., LTD.
Inventor： Isamu Nishimura
IPC: H01L23/13 , H01L21/48 , H01L23/14 , H01L23/373 , H01L23/498 , H01L23/00 , H01L43/04 , H01L43/06
Abstract: The present disclosure provides a semiconductor device and a method of making the same for suppressing warpages of an article due to a difference of temperature strains during the process of making the semiconductor device. The semiconductor device of the present disclosure includes a substrate having a main surface and a recess recessed therefrom; a semiconductor element disposed in the recess; a wiring portion connected to the substrate and electrically connected to the semiconductor element; and a sealing resin filled in the recess. The substrate includes an electrical insulative synthetic resin. The recess has a bottom surface and a connecting surface connected to the bottom surface and the main surface. The connecting surface includes a first inclined surface connected to the bottom surface; a second inclined surface connected to the main surface; and an intermediate surface connected to the first inclined surface and the second inclined surface.
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