公开(公告)号：US12099005B2

公开(公告)日：2024-09-24

申请号：US17597061

申请日：2020-06-30

Applicant: ROHM CO., LTD.

Inventor： Tomoichiro Toyama ,  Kazuisao Tsuruda

IPC: G01N21/3581 ,  H01L29/861 ,  H01Q9/16 ,  H03B7/08

CPC classification number: G01N21/3581 ,  H01L29/861 ,  H01Q9/16 ,  H03B7/08 ,  H03B2200/0084

Abstract: A terahertz device includes a base member, a terahertz element, an antenna base, and a reflection film. The terahertz element is mounted on the base member and configured to generate an electromagnetic wave. The antenna base is located opposing the base member and includes an antenna surface. The reflection film is formed on the antenna surface to reflect at least part of the electromagnetic wave generated by the terahertz element in one direction.

公开(公告)号：US11811365B2

公开(公告)日：2023-11-07

申请号：US17832209

申请日：2022-06-03

Applicant: ROHM CO., LTD.

Inventor： Kazuisao Tsuruda ,  Hideaki Yanagida

IPC: H03B7/08 ,  H01L23/14 ,  H01L23/28 ,  H01L23/498 ,  H01L23/538 ,  H01L23/66 ,  H01P1/20 ,  H01L23/00 ,  H01L23/31 ,  H01L25/065 ,  H01L25/00

CPC classification number: H03B7/08 ,  H01L23/14 ,  H01L23/28 ,  H01L23/3135 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/66 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/50 ,  H01P1/2005 ,  H01L2221/68345 ,  H01L2224/13111 ,  H03B2200/0084

Abstract: Terahertz device includes first resin layer, columnar conductor, wiring layer, terahertz element, second resin layer, and external electrode. Resin layer includes first resin layer obverse face and first resin layer reverse face. Columnar conductor includes first conductor obverse face and first conductor reverse face, penetrating first resin layer in z-direction. Wiring layer spans between first resin layer obverse face and first conductor obverse face. Terahertz element includes element obverse face and element reverse face, and converts between terahertz wave and electric energy. Second resin layer includes second resin layer obverse face and second resin layer reverse face, and covers wiring layer and terahertz element. External electrode, disposed offset in a direction first resin layer reverse face faces with respect to first resin layer, is electrically connected to columnar conductor. Terahertz element is conductively bonded to wiring layer.

公开(公告)号：US11569184B2

公开(公告)日：2023-01-31

申请号：US17719056

申请日：2022-04-12

Applicant: ROHM Co., Ltd.

Inventor： Kazuisao Tsuruda

IPC: H01L23/66 ,  H01Q15/16 ,  H01L29/20 ,  H01Q1/22 ,  H01Q19/13 ,  H01L29/88 ,  H01Q15/23

Abstract: A terahertz device of the present invention includes a terahertz element generating an electromagnetic wave, a dielectric including a dielectric material and surrounding the terahertz element, a gas space including a gas, and a reflecting film serving as a reflecting portion. The reflecting film includes a portion opposing the terahertz element through the dielectric and the gas space and reflecting the electromagnetic wave toward a direction, wherein the electromagnetic wave is generated from the terahertz element and transmitted through the dielectric and the gas space. In addition, the refractive index of the dielectric is lower than the refractive index of the terahertz element and is higher than the refractive index of the gas in the gas space.

公开(公告)号：US10957598B2

公开(公告)日：2021-03-23

申请号：US16755839

申请日：2018-10-02

Applicant: ROHM CO., LTD.

Inventor： Toshikazu Mukai ,  Jae Young Kim ,  Kazuisao Tsuruda

IPC: H01L21/822 ,  H01L29/88 ,  H01L29/866

Abstract: According to one aspect of the present disclosure, a terahertz device is provided. The terahertz device includes a semiconductor substrate, a terahertz element, and a first rectifying element. The terahertz element is disposed on the semiconductor substrate. The first rectifying element is electrically connected to the terahertz element in parallel.

公开(公告)号：US10066984B2

公开(公告)日：2018-09-04

申请号：US15808051

申请日：2017-11-09

Applicant: ROHM CO., LTD.

Inventor： Toshikazu Mukai ,  Jae-young Kim ,  Kazuisao Tsuruda

IPC: G01J5/02 ,  G01J1/02 ,  G01J1/06 ,  H01L31/02 ,  H01L31/167 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/109 ,  H01L31/0203

Abstract: The THz device module includes: a substrate; a THz device disposed on a front side surface of the substrate, and configured to oscillate or detect THz waves; a cap covering the THz device being separated from the THz device, and comprising an opening formed at a position opposite to the THz device in a vertical direction of the front side surface of the substrate; and a sealing member covering the opening of the cap so as to seal the THz device in conjunction with the substrate and the cap. A distance from the THz device to the sealing member is within a near-field pattern to which an electric field of the THz waves can be reached without interruption from a surface of the THz device to the sealing member. The THz device module efficiently emits or detects THz waves from the opening, thereby suppressing upsizing of the cap.