SSH CIRCUIT AND ELECTRONIC DEVICE
    1.
    发明公开

    公开(公告)号:US20240243717A1

    公开(公告)日:2024-07-18

    申请号:US18413268

    申请日:2024-01-16

    Applicant: ROHM Co., LTD.

    CPC classification number: H03H7/0115

    Abstract: An SSH circuit includes a plurality of unit lattices, each unit lattice including unit circuits. Each unit circuit includes two first inductors, a second inductor connected in series between the two first inductors, and two capacitors connected between a ground potential and two respective connection nodes at which the first and second inductors are connected to each other, an inductance of the second inductor being larger than that of the first inductors. In each unit lattice, the two connection nodes of each unit circuit are arranged at respective vertexes of both ends of each side forming a hyperrectangle, and the connection nodes arranged at each vertex being connected to each other and sharing the corresponding capacitor. The unit lattices are connected to each other by a mutual sharing of the first inductors by two unit lattices adjacent to each other. A peripheral edge has an uneven shape of unit lattices.

    Terahertz device and terahertz integrated circuit

    公开(公告)号:US10276919B2

    公开(公告)日:2019-04-30

    申请号:US15443636

    申请日:2017-02-27

    Abstract: A THz device includes: an antenna electrode capable of transmitting and receiving a THz wave to free space; first transmission lines capable of transmitting the THz wave, the first transmission lines respectively connected to the antenna electrodes; an active element of which a main electrode is connected to each of the first transmission lines; second transmission lines capable of transmitting the THz wave, the second transmission lines connected to the first active device; pad electrodes respectively connected to the second transmission lines; and a low-pass filter with respect to the THz wave, the low-pass filter connected to the pad electrodes, wherein impedance matching of between the antenna electrode and the active element is performed by an impedance conversion of the first transmission lines. The THz device is capable of the high-efficiency matching between the active element and the antenna due to the impedance conversion effect of the transmission line.

    Terahertz device
    3.
    发明授权

    公开(公告)号:US11243164B2

    公开(公告)日:2022-02-08

    申请号:US16983443

    申请日:2020-08-03

    Applicant: ROHM CO., LTD.

    Inventor: Kazuisao Tsuruda

    Abstract: There is provided a terahertz device including: a terahertz element configured to generate an electromagnetic wave; a reflection film provided at a position facing the terahertz element and configured to reflect the electromagnetic wave generated from the terahertz element in one direction; and an encapsulating material configured to encapsulate the terahertz element and the reflection film.

    Terahertz device and fabrication method of the same

    公开(公告)号:US10205242B2

    公开(公告)日:2019-02-12

    申请号:US15614700

    申请日:2017-06-06

    Applicant: ROHM CO., LTD.

    Abstract: THz device includes: a semiconductor substrate; a first semiconductor layer disposed on the semiconductor substrate; an active element formed by being laminated on the first semiconductor layer; a second electrode connected to the first semiconductor layer to be connected to a cathode K of the active element, the second electrode disposed on the semiconductor substrate; a first electrode connected to an anode A of the active element, the first electrode disposed on the semiconductor substrate to be opposite to the second electrode; a rear reflector metal layer disposed on a back side surface of the semiconductor substrate opposite to the first semiconductor layer, wherein the active element forms a resonator between the second and first electrodes, wherein electromagnetic waves are reflected on the rear reflector metal layer, and electromagnetic waves have a surface light-emission radiating pattern or surface light-receiving pattern in a vertical direction to the semiconductor substrate.

    Terahertz device and method for manufacturing terahertz device

    公开(公告)号:US11387783B2

    公开(公告)日:2022-07-12

    申请号:US17296192

    申请日:2019-11-28

    Applicant: ROHM CO., LTD.

    Abstract: Terahertz device includes first resin layer, columnar conductor, wiring layer, terahertz element, second resin layer, and external electrode. Resin layer includes first resin layer obverse face and first resin layer reverse face. Columnar conductor includes first conductor obverse face and first conductor reverse face, penetrating first resin layer in z-direction. Wiring layer spans between first resin layer obverse face and first conductor obverse face. The terahertz element includes element obverse face and element reverse face, and converts between terahertz wave and electric energy. Second resin layer includes second resin layer obverse face and second resin layer reverse face, and covers wiring layer and terahertz element. External electrode, disposed offset in a direction first resin layer reverse face faces with respect to first resin layer, is electrically connected to columnar conductor.

    Terahertz device
    7.
    发明授权

    公开(公告)号:US11335653B2

    公开(公告)日:2022-05-17

    申请号:US16999029

    申请日:2020-08-20

    Applicant: ROHM Co., Ltd.

    Inventor: Kazuisao Tsuruda

    Abstract: The task of the present invention is to achieve gain enhancement.
    A terahertz device (10) of the present invention includes a terahertz element (20) generating an electromagnetic wave, a dielectric (50) including a dielectric material and surrounding the terahertz element (20), a gas space (92) including a gas, and a reflecting film (82) serving as a reflecting portion. The reflecting film (82) includes a portion opposing the terahertz element (20) through the dielectric (50) and the gas space (92) and reflecting the electromagnetic wave toward a direction, wherein the electromagnetic wave is generated from the terahertz element (20) and transmitted through the dielectric (50) and the gas space (92). In addition, the refractive index of the dielectric (50) is lower than the refractive index of the terahertz element (20) and is higher than the refractive index of the gas in the gas space (92).

    Terahertz device
    8.
    发明授权

    公开(公告)号:US12174114B2

    公开(公告)日:2024-12-24

    申请号:US17998883

    申请日:2021-06-07

    Applicant: ROHM CO., LTD.

    Inventor: Kazuisao Tsuruda

    Abstract: A terahertz device includes an antenna base including reflective films, wherein: the reflective films are curved to be recessed; the reflective film and the reflective film are arranged to be adjacent to each other in a y direction; and when viewed from a z direction, the sizes of the reflective film and the reflective film along an x direction are smaller than the sizes of the reflective film and the reflective film along the y direction.

    Reflective detection device
    9.
    发明授权

    公开(公告)号:US10656021B2

    公开(公告)日:2020-05-19

    申请号:US15617313

    申请日:2017-06-08

    Applicant: ROHM CO., LTD.

    Abstract: A reflective detection device, includes: oscillation element oscillating a terahertz wave; exit part from which the terahertz wave exits; incident part to which the terahertz wave reflected from a detection target is incident; and detection element detecting the terahertz wave incident to the incident part, wherein the exit part and the incident part are disposed on one side in first direction and are spaced apart from each other in second direction with respect to the detection target, the terahertz wave exiting from the exit part travels to propagate from the exit part toward the incident part in the second direction along a direction toward the detection object in the first direction, and the terahertz wave incident to the incident part travels to propagate from the exit part toward the incident part in the second direction along a direction away from the detection target in the first direction.

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