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    Read/write head with integrated switch network
    11.
    发明授权
    Read/write head with integrated switch network 有权

    公开(公告)号：US09947357B2

    公开(公告)日：2018-04-17

    申请号：US15086959

    申请日：2016-03-31

    Applicant: Seagate Technology LLC

    Inventor： Tim Rausch ,  Jon D. Trantham ,  Jason Bryce Gadbois

    IPC: G11B5/60

    CPC classification number: G11B5/607 ,  G11B5/02 ,  G11B5/3977 ,  G11B5/4853

    Abstract: A read/write head has a set of components that at least include: at least one clearance actuator; at least one read transducer configured to read from a magnetic recording medium; and at least one write transducer configured to write to the magnetic recording medium. A switch network is coupled to the set of components and configured to, in response to a control signal, couple a selected sub-combination of the components to a common set of signal lines. The coupling of the selected sub-combination facilitates operation in a selected mode of the read/write head.

    Characterizing laser output in a HAMR device
    14.
    发明授权
    Characterizing laser output in a HAMR device 有权
    表征HAMR设备中的激光输出

    公开(公告)号：US09153272B1

    公开(公告)日：2015-10-06

    申请号：US14278386

    申请日：2014-05-15

    Applicant: Seagate Technology LLC

    Inventor： Tim Rausch ,  Jon D. Trantham ,  John W. Dykes ,  Won Choul Yang

    IPC: G11B11/00 ,  G11B7/1267 ,  G11B5/012 ,  G11B7/1263 ,  G11B5/00

    CPC classification number: G11B7/1267 ,  G11B5/012 ,  G11B5/314 ,  G11B5/455 ,  G11B5/6088 ,  G11B7/1263 ,  G11B2005/0021

    Abstract: At least one laser input current is applied to a laser in a heat assisted magnetic recording device. Laser output power of the laser is measured at the at least one applied laser current. A relationship is characterized amongst temperature, applied laser input current and laser output power. Laser current is set to an optimal laser current as determined at manufacturing. A metric of recording performance is measured to determine if the relationship is acceptable.

    Abstract translation: 至少一个激光输入电流被施加到热辅助磁记录装置中的激光器。 在至少一个施加的激光电流下测量激光器的激光输出功率。 温度，施加的激光输入电流和激光输出功率之间的关系的特征。 激光电流设置为在制造时确定的最佳激光电流。 测量记录性能的度量以确定该关系是否可接受。

    Forming a characterization parameter of a resistive memory element
    15.
    发明授权
    Forming a characterization parameter of a resistive memory element 有权
    形成电阻式存储元件的表征参数

    公开(公告)号：US09105360B2

    公开(公告)日：2015-08-11

    申请号：US13789123

    申请日：2013-03-07

    Applicant: Seagate Technology LLC

    Inventor： Ryan James Goss ,  Mark Allen Gaertner ,  Antoine Khoueir ,  David Scott Ebsen ,  Jon D. Trantham

    IPC: G06F12/00 ,  G11C29/50 ,  G06F11/10 ,  G11C13/00

    CPC classification number: G11C29/50008 ,  G06F11/10 ,  G06F11/1012 ,  G11C13/00 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2013/0083 ,  G11C2013/0092

    Abstract: An incremental signal is defined that includes at least one of a duration and a peak voltage that is less than a respective minimum programming time or minimum programming voltage step of a resistive memory element. A characterization procedure is repeatedly performed that at least involves: applying a signal to the memory element, the signal being incremented by the incremental signal during each subsequent application; measuring a first resistance of the memory element in response to the signal; and c) measuring a second resistance of the memory element after a time period has elapsed from the measurement of the first resistance with no programming signal applied. In response to the first and second resistance measurements of the characterization procedure, a characterization parameter of the memory element is formed.

    Abstract translation: 定义增量信号，其包括持续时间和峰值电压中的至少一个小于电阻式存储器元件的相应的最小编程时间或最小编程电压阶跃。 重复执行表征过程，其至少包括：将信号施加到存储元件，在每个随后的应用期间，信号由增量信号递增; 响应于所述信号测量所述存储元件的第一电阻; 以及c）在没有施加编程信号的第一电阻的测量经过一段时间之后测量存储元件的第二电阻。 响应于表征过程的第一和第二电阻测量，形成存储元件的表征参数。

    HEAD TO MEDIA PROXIMITY DETECTION
    17.
    发明申请
    HEAD TO MEDIA PROXIMITY DETECTION 有权
    到媒体接近检测

    公开(公告)号：US20140268407A1

    公开(公告)日：2014-09-18

    申请号：US14063942

    申请日：2013-10-25

    Applicant: Seagate Technology LLC

    Inventor： Antanas Daugela ,  Jon D. Trantham ,  Srinivas Tadepalli

    IPC: G11B21/12

    CPC classification number: G11B5/6029 ,  G11B5/607 ,  G11B5/6076

    Abstract: In one implementation, a method and apparatus is provided for determining an active fly height setting for a transducer head from samples collected from a proximity sensor during less than a single revolution of a disc. Implementations of the method and system use adaptive discrete wavelet transform parameters generated from the collected samples to determine an active fly height setting for a transducer head.

    Abstract translation: 在一个实施方案中，提供了一种方法和装置，用于在盘的单次旋转期间从接近传感器收集的样品确定换能器头的主动飞行高度设置。 方法和系统的实现使用从采集的样本产生的自适应离散小波变换参数，以确定换能器头的主动飞行高度设置。

    DATA PROTECTION FOR UNEXPECTED POWER LOSS
    18.
    发明申请
    DATA PROTECTION FOR UNEXPECTED POWER LOSS 审中-公开
    数据保护意外的电力损失

    公开(公告)号：US20140219021A1

    公开(公告)日：2014-08-07

    申请号：US13761965

    申请日：2013-02-07

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Jon D. Trantham ,  Michael Joseph Steiner ,  Antoine Khoueir

    IPC: G11C5/14

    CPC classification number: G11C5/143 ,  G11C7/24 ,  G11C11/005

    Abstract: A data storage device receives a write data command and data. The data is stored in a buffer of the data storage device. The data storage device issues a command complete status indication. After the command complete status indication is issued, the data are stored in a primary memory of the data storage device. The primary memory comprises a first type of non-volatile memory and the buffer comprises a second type of non-volatile memory that is different from the first type of non-volatile memory.

    Abstract translation: 数据存储装置接收写数据命令和数据。 数据存储在数据存储装置的缓冲器中。 数据存储设备发出命令完成状态指示。 在发出命令完成状态指示之后，将数据存储在数据存储设备的主存储器中。 主存储器包括第一类型的非易失性存储器，并且缓冲器包括与第一类型的非易失性存储器不同的第二类型的非易失性存储器。

    Balancing power, endurance and latency in a ferroelectric memory
    20.
    发明授权
    Balancing power, endurance and latency in a ferroelectric memory 有权

    公开(公告)号：US12282681B2

    公开(公告)日：2025-04-22

    申请号：US17841083

    申请日：2022-06-15

    Applicant: Seagate Technology LLC

    Inventor： Jon D. Trantham ,  Praveen Viraraghavan ,  John W. Dykes ,  Ian J. Gilbert ,  Sangita Shreedharan Kalarickal ,  Matthew J. Totin ,  Mohamad El-Batal ,  Darshana H. Mehta

    IPC: G06F3/06

    Abstract: Apparatus and method for managing data in a non-volatile memory (NVM) having an array of ferroelectric memory cells (FMEs). A data set received from an external client device is programmed to a group of the FMEs at a target location in the NVM using a selected profile. The selected profile provides different program characteristics, such as applied voltage magnitude and pulse duration, to achieve desired levels of power used during the program operation, endurance of the data set, and latency effects associated with a subsequent read operation to retrieve the data set. The profile may be selected from among a plurality of profiles for different operational conditions. The ferroelectric NVM may form a portion of a solid-state drive (SSD) storage device. Different types of FMEs may be utilized including ferroelectric tunneling junctions (FTJs), ferroelectric random access memory (FeRAM), and ferroelectric field effect transistors (FeFETs).

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