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    QUANTUM ELECTROMAGNETIC FIELD SENSOR
    11.
    发明公开
    QUANTUM ELECTROMAGNETIC FIELD SENSOR 审中-公开

    公开(公告)号：US20240310422A1

    公开(公告)日：2024-09-19

    申请号：US18577054

    申请日：2022-07-06

    Applicant: SRI International

    Inventor： Kaitlin Moore ,  Sterling Eduardo McBride ,  Winston K. Chan ,  Alan M. Braun ,  Cale M. Gentry

    IPC: G01R29/08

    CPC classification number: G01R29/0885

    Abstract: In one example, a sensor comprising a vapor cell including a vapor of alkali atoms is disclosed. The sensor further comprises a system configured to direct electromagnetic (EM) radiation of one or more frequencies into the vapor cell and incident on the vapor of alkali atoms. The EM radiation of one or more frequencies is configured to prepare the alkali atoms from a first quantum state to a Rydberg state. The alkali atoms prepared in the Rydberg state comprise an orbital angular momentum quantum number that is at least the number of quanta of the one or more frequencies. The sensor further comprises a detector configured to detect a response of the alkali atoms to incident electromagnetic radiation after the alkali atoms are prepared in the Rydberg state.

    Photodiodes without excess noise
    14.
    发明授权
    Photodiodes without excess noise 有权

    公开(公告)号：US11362232B2

    公开(公告)日：2022-06-14

    申请号：US17056315

    申请日：2019-05-24

    Applicant: SRI International

    Inventor： Winston K. Chan

    IPC: H01L31/107 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/18 ,  G01J1/44 ,  G01S17/931 ,  G01S7/481

    Abstract: A photodiode, such as a linear mode avalanche photodiode can be made free of excess noise via having a superlattice multiplication region that allows only one electrical current carrier type, such as an electron or a hole, to accumulate enough kinetic energy to impact ionize when biased, where the layers are lattice matched. A photodiode can be constructed with i) a lattice matched pair of a first semiconductor alloy and a second semiconductor alloy in a superlattice multiplication region, ii) an absorber region, and iii) a semiconductor substrate. A detector with multiple photodiodes can be made with these construction layers in order to have a cutoff wavelength varied anywhere from 1.7 to 4.9 μm as well as a noise resulting from a dark current at a level such that an electromagnetic radiation signal with the desired minimum wavelength cutoff can be accurately sensed by the photodiode.

    Linear mode avalanche photodiodes without excess noise
    15.
    发明授权
    Linear mode avalanche photodiodes without excess noise 有权

    公开(公告)号：US11271130B2

    公开(公告)日：2022-03-08

    申请号：US17056309

    申请日：2018-07-11

    Applicant: SRI International

    Inventor： Winston K. Chan

    IPC: G01J1/44 ,  H01L31/107 ,  H01L31/0304 ,  H01L31/0352 ,  G01S17/931 ,  G01S7/481 ,  H01L31/18

    Abstract: A linear mode avalanche photodiode senses light and outputs electrical current by being configured to, generate a gain equal to or greater than 1000 times amplification while generating an excess noise factor of less than 3 times a thermal noise present at or above a non-cryogenic temperature due to the gain from the amplification. The linear mode avalanche photodiode detects one or more photons in the light by using a superlattice structure that is matched to suppress impact ionization for a first carrier in the linear mode avalanche photodiode while at least one of 1) increasing impact ionization, 2) substantially maintaining impact ionization, and 3) suppressing impact ionization to a lesser degree for a second carrier. The first carrier having its impact ionization suppressed is either i) an electron or ii) a hole; and then, the second carrier is the electron or the hole.

    COMPACT ELECTROSTATIC ION PUMP
    16.
    发明申请
    COMPACT ELECTROSTATIC ION PUMP 审中-公开

    公开(公告)号：US20200343081A1

    公开(公告)日：2020-10-29

    申请号：US16629528

    申请日：2018-07-11

    Applicant: SRI International

    Inventor： Sterling Eduardo McBride ,  Joey J. Michalchuk ,  Christopher E. Holland ,  Ashish Chaudhary ,  Winston K. Chan

    IPC: H01J41/20 ,  F04B37/14

    Abstract: The disclosure includes an outer electrode and an inner electrode. The outer electrode defines an inner volume and is configured to receive injected electrons through at least one aperture. The inner electrode positioned in the inner volume. The outer electrode and inner electrode are configured to confine the received electrons in orbits around the inner electrode in response to an electric potential between the outer electrode and the inner electrode. The apparatus does not include a component configured to generate an electron-confining magnetic field.

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