公开(公告)号：US20210210437A1

公开(公告)日：2021-07-08

申请号：US17205779

申请日：2021-03-18

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoWang Koo ,  SungWon Cho ,  BongWoo Choi

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48 ,  H01R43/20 ,  H01R43/26 ,  H01R12/79 ,  H01R12/52

Abstract: A semiconductor device has a substrate including a terminal and an insulating layer formed over the terminal. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the insulating layer over the terminal is exposed from the encapsulant. A shielding layer is formed over the encapsulant and terminal. A portion of the shielding layer is removed to expose the portion of the insulating layer. The portion of the insulating layer is removed to expose the terminal. The portion of the shielding layer and the portion of the insulating layer can be removed by laser ablation.

公开(公告)号：US12288753B2

公开(公告)日：2025-04-29

申请号：US17369654

申请日：2021-07-07

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoungHee Park ,  KyoWang Koo ,  SungWon Cho

IPC: H01L23/552 ,  H01L21/56 ,  H01L21/78 ,  H01L23/04 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065

Abstract: A semiconductor device has a substrate. A lid is disposed over the substrate. An encapsulant is deposited over the substrate. A film mask is disposed over the encapsulant with the lid exposed from the film mask and encapsulant. A conductive layer is formed over the film mask, encapsulant, and lid. The film mask is removed after forming the conductive layer.

公开(公告)号：US11715703B2

公开(公告)日：2023-08-01

申请号：US17660093

申请日：2022-04-21

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： SungWon Cho ,  ChangOh Kim ,  Il Kwon Shim ,  InSang Yoon ,  KyoungHee Park

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L23/50 ,  H01L23/522 ,  H01L23/00 ,  H01L23/36 ,  H01L23/60 ,  H01L27/02

CPC classification number: H01L23/552 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/367 ,  H01L23/49816 ,  H01L23/50 ,  H01L23/5225 ,  H01L23/562 ,  H01L23/60 ,  H01L24/26 ,  H01L27/0248 ,  H01L2924/181

Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

公开(公告)号：US11688697B2

公开(公告)日：2023-06-27

申请号：US17662977

申请日：2022-05-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Dong Won Son ,  Byeonghoon Kim ,  Sung Ho Choi ,  Sung Jae Lim ,  Jong Ho Shin ,  SungWon Cho ,  ChangOh Kim ,  KyoungHee Park

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L23/552 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/49816 ,  H01L23/562 ,  H01L24/14 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/181 ,  H01L2924/3025

Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

公开(公告)号：US11444035B2

公开(公告)日：2022-09-13

申请号：US16991370

申请日：2020-08-12

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoWang Koo ,  SungWon Cho ,  BongWoo Choi ,  JiWon Lee

IPC: H01L23/552 ,  H01L23/66 ,  H01L23/28 ,  H01L25/00 ,  H01L21/56 ,  H01L23/00 ,  H01L21/60

Abstract: A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.

公开(公告)号：US11355452B2

公开(公告)日：2022-06-07

申请号：US17068482

申请日：2020-10-12

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Dong Won Son ,  Byeonghoon Kim ,  Sung Ho Choi ,  Sung Jae Lim ,  Jong Ho Shin ,  SungWon Cho ,  ChangOh Kim ,  KyoungHee Park

IPC: H01L23/34 ,  H01L23/28 ,  H01L21/00 ,  H05K7/20 ,  H01L23/552 ,  H01L23/31 ,  H01L23/00 ,  H01L23/498 ,  H01L23/367

Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

公开(公告)号：US11145603B2

公开(公告)日：2021-10-12

申请号：US16005387

申请日：2018-06-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Byung Joon Han ,  Il Kwon Shim ,  KyoungHee Park ,  Yaojian Lin ,  KyoWang Koo ,  In Sang Yoon ,  SeungYong Chai ,  SungWon Cho ,  SungSoo Kim ,  Hun Teak Lee ,  DeokKyung Yang

IPC: H01L23/00 ,  H01L23/552 ,  H01L23/498 ,  H01L21/48 ,  H01L21/683 ,  H01L23/31 ,  H01L25/16 ,  H01L21/56

Abstract: An integrated circuit packaging system and method of manufacture thereof includes: a substrate with internal circuitry between a substrate top side, a substrate bottom side, and vertical sides; an integrated circuit coupled to the internal circuitry; a molded package body formed directly on the integrated circuit and the substrate top side of the substrate; and a conductive conformal shield structure applied directly on the molded package body, the vertical sides, and to extend below the substrate bottom side coupled to the internal circuitry.

公开(公告)号：US10804217B2

公开(公告)日：2020-10-13

申请号：US16529486

申请日：2019-08-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： SungWon Cho ,  ChangOh Kim ,  Il Kwon Shim ,  InSang Yoon ,  KyoungHee Park

IPC: H01L27/14 ,  H01L21/00 ,  H01L23/552 ,  H01L23/00 ,  H01L23/36 ,  H01L23/522 ,  H01L23/50 ,  H01L23/60 ,  H01L23/498 ,  H01L27/02 ,  H01L23/31

Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

公开(公告)号：US20220384360A1

公开(公告)日：2022-12-01

申请号：US17817461

申请日：2022-08-04

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoWang Koo ,  SungWon Cho ,  BongWoo Choi ,  JiWon Lee

IPC: H01L23/552 ,  H01L23/66 ,  H01L23/28 ,  H01L25/00 ,  H01L21/56 ,  H01L23/00

Abstract: A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.

公开(公告)号：US20210118810A1

公开(公告)日：2021-04-22

申请号：US17136197

申请日：2020-12-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoWang Koo ,  SungWon Cho ,  BongWoo Choi ,  JiWon Lee

IPC: H01L23/552 ,  H01L21/311 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L23/66

Abstract: A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.