公开(公告)号：US20230042262A1

公开(公告)日：2023-02-09

申请号：US17522197

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo CHOI ,  Bonwon KOO ,  Yongyoung PARK ,  Hajun SUNG ,  Dongho AHN ,  Kiyeon YANG ,  Wooyoung YANG ,  Changseung LEE

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

Abstract: Provided are a switching device and a memory device including the switching device. The switching device includes first and second electrodes, and a switching material layer provided between the first and second electrodes and including a chalcogenide. The switching material layer includes a core portion and a shell portion covering a side surface of the core portion. The switching layer includes a material having an electrical resistance greater than an electrical resistance of the core portion, for example in at least one of the core portion or the shell portion.

公开(公告)号：US20220406842A1

公开(公告)日：2022-12-22

申请号：US17523363

申请日：2021-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hajun SUNG ,  Bonwon KOO ,  Segab KWON ,  Yongyoung PARK ,  Dongho AHN ,  Kiyeon YANG ,  Wooyoung YANG ,  Changseung LEE ,  Minwoo CHOI

IPC: H01L27/24 ,  H01L27/22 ,  C01B19/00

Abstract: Provided are a chalcogenide material, and a device and a memory device each including the same. The chalcogenide material may include: germanium (Ge) as a first component; arsenic (As) as a second component; at least one element selected from selenium (Se) and tellurium (Te) as a third component; and at least one element selected from the elements of Groups 2, 16, and 17 of the periodic table as a fourth component, wherein a content of the first component may be from 5 at % to 30 at %, a content of the second component may be from 20 at % to 40 at %, a content of the third component may be from 25 at % to 75 at %, and a content of the fourth component may be from 0.5 at % to 5 at %.

公开(公告)号：US20220140003A1

公开(公告)日：2022-05-05

申请号：US17244212

申请日：2021-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyoung YANG ,  Bonwon KOO ,  Chungman KIM ,  Kwangmin PARK ,  Hajun SUNG ,  Dongho AHN ,  Changseung LEE ,  Minwoo CHOI

IPC: H01L27/24 ,  H01L27/22 ,  H01L45/00 ,  H01L43/02 ,  H01L43/12

Abstract: A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).

公开(公告)号：US20160026056A1

公开(公告)日：2016-01-28

申请号：US14796510

申请日：2015-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bonwon KOO ,  Deukseok CHUNG ,  Hyunjoon KIM ,  Shanghyeun PARK ,  Changsoo LEE ,  Taewon JEONG

IPC: G02F1/157 ,  G02B1/11 ,  G02F1/1335

Abstract: Complex films having an electro-chromic mirror and an anti-reflective film, displays that include the complex films, and methods of manufacturing the complex films and the displays, include an electro-chromic mirror including a plurality of electro-chromic material layers, and an anti-reflective film including a plurality of anti-reflective material layers, wherein at least some of the plurality of anti-reflective material layers are between an uppermost layer and a lowermost layer of the plurality of electro-chromic material layers.

Abstract translation: 具有电致发光镜和抗反射膜的复合膜，包括复合膜的显示器以及制造复合膜和显示器的方法包括：包含多个电致密层的电致像镜，以及 包括多个抗反射材料层的抗反射膜，其中所述多个抗反射材料层中的至少一些位于所述多个电色材料层的最上层和最下层之间。