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公开(公告)号：US20250149084A1
公开(公告)日：2025-05-08
申请号：US18785752
申请日：2024-07-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changseung LEE , Minwoo CHOI , Bonwon KOO , Hajun SUNG , Kiyeon YANG
Abstract: Provided are a memory device for implementing a multi-level memory and a method of implementing a multi-level memory by using the memory device. The memory device includes first and second electrodes apart from each other, a self-selecting memory layer between the first and second electrodes having an ovonic threshold switching characteristic, including a chalcogenide-based material, and configured to have a threshold voltage varying depending on a polarity of and strength of a voltage applied thereto, and a resistive memory layer between the second electrode and the self-selecting memory layer and having a resistance characteristic varying depending on a voltage applied thereto. The memory device is configured to implement multi-level resistance states by changing at least one of a pulse polarity, a number of pulses, pulse height, and a pulse width of a voltage applied between the first and second electrodes.
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公开(公告)号：US20180188559A1
公开(公告)日：2018-07-05
申请号：US15632640
申请日：2017-06-26
Applicant: SAMSUNG ELECTRONICS CO., LTD. , IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
Inventor： Kiyeon YANG , Youngsun CHOI , Seokho SONG , Jaewoong YOON , Choloong HAN , Yongsung KIM , Jeongyub LEE , Changseung LEE
CPC classification number: G02F1/093 , G02B6/12007 , G02B6/2746 , G02B6/2935 , G02B6/4209 , G02B2006/12157 , G02F1/0955 , G02F1/31 , G02F2203/04 , G02F2203/06
Abstract: Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.
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3.发明申请DEVICE INCLUDING VERTICALLY ALIGNED TWO-DIMENSIONAL MATERIAL AND METHOD OF FORMING A VERTICALLY ALIGNED TWO-DIMENSIONAL MATERIAL 有权包括垂直对准的二维材料的装置和形成垂直对准的二维材料的方法公开(公告)号：US20170003248A1
公开(公告)日：2017-01-05
申请号：US14972873
申请日：2015-12-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiyeon YANG , Changseung LEE , Namjeong KIM , Yeonhee KIM
IPC: G01N27/414 , H01L21/3065 , H01L29/786 , H01L21/02
CPC classification number: G01N27/4141 , C30B25/04 , C30B29/46 , C30B29/60 , H01L21/02568 , H01L21/0259 , H01L21/02614 , H01L21/0262 , H01L21/02631 , H01L21/3065 , H01L29/0665 , H01L29/24 , H01L29/66969 , H01L29/778 , H01L29/7851 , H01L29/78681 , H01L29/78684 , H01L29/78696
Abstract: A transistor includes a substrate, a two-dimensional material including at least one layer that is substantially vertically aligned on the substrate such that an edge of the layer is on the substrate and the layer extends substantially vertical to the substrate, a source electrode and a drain electrode connected to opposite ends of the two-dimensional material, a gate insulation layer on the two-dimensional material between the source electrode and the drain electrode, and a gate electrode on the gate insulation layer. Each layer includes a semiconductor having a two-dimensional crystal structure.
Abstract translation: 晶体管包括衬底，二维材料，其包括在衬底上基本上垂直对准的至少一层，使得该层的边缘在衬底上，并且该层基本垂直于衬底延伸，源电极和 连接到二维材料的相对端的漏电极，在源电极和漏电极之间的二维材料上的栅极绝缘层，以及栅极绝缘层上的栅电极。 每个层包括具有二维晶体结构的半导体。
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公开(公告)号：US20240324246A1
公开(公告)日：2024-09-26
申请号：US18594355
申请日：2024-03-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiyeon YANG , Donggeon GU , Bonwon KOO , Jeonghee PARK , Hajun SUNG , Dongho AHN , Zhe WU , Changseung LEE , Minwoo CHOI
CPC classification number: H10B63/24 , H10B63/84 , H10N70/841 , H10N70/8825 , H10N70/8828
Abstract: Provided are a self-selecting memory device having polarity dependent threshold voltage shift characteristics and/or a memory apparatus including the self-selecting memory device. The memory device includes a first electrode, a second electrode apart from and facing the first electrode, and a memory layer between the first electrode and the second electrode. The memory layer has Ovonic threshold switching characteristics and is configured to have a threshold voltage of the memory layer be changed as a density of active traps in the memory layer is changed, the threshold voltage changing according to the polarity and the intensity of a bias voltage applied to the memory layer. Furthermore, an element composition distribution is configured to be maintained constant in the memory layer in response to the threshold voltage of the memory layer changing.
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公开(公告)号：US20210255037A1
公开(公告)日：2021-08-19
申请号：US17230636
申请日：2021-04-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chanwook BAIK , Jaekwan KIM , Byonggwon SONG , Kiyeon YANG , Jaesoong LEE , Jeongyub LEE , Kyungsang CHO
Abstract: An optical filter may include a first reflector and a second reflector. The first reflector may include a plurality of first gratings having a first sub-wavelength dimension and being arranged to recur at a first interval in a first direction. The second reflector may be spaced apart from the first reflector and include a plurality of second gratings having a second sub-wavelength dimension and arranged to recur at a second interval in a direction parallel to the first direction. The first reflector and the second reflector may include different materials or different geometric structures from each other. Accordingly, it is easy to adjust the transmission wavelength characteristics of the optical filter.
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Patent Agency Ranking
公开(公告)号：US20180274977A1
公开(公告)日：2018-09-27
申请号：US15926362
申请日：2018-03-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chanwook BAIK , Jaekwan KIM , Byonggwon SONG , Kiyeon YANG , Jaesoong LEE , Jeongyub LEE , Kyungsang CHO
CPC classification number: G01J3/021 , F21V7/22 , G01J3/0224 , G01J3/1804 , G01J3/26 , G01J2003/1861 , G02B5/1809 , G02B5/1866 , G02B5/20 , G02B5/203 , G02B27/4272
Abstract: An optical filter may include a first reflector and a second reflector. The first reflector may include a plurality of first gratings having a first sub-wavelength dimension and being arranged to recur at a first interval in a first direction. The second reflector may be spaced apart from the first reflector and include a plurality of second gratings having a second sub-wavelength dimension and arranged to recur at a second interval in a direction parallel to the first direction. The first reflector and the second reflector may include different materials or different geometric structures from each other. Accordingly, it is easy to adjust the transmission wavelength characteristics of the optical filter.
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7.发明申请公开(公告)号：US20180148584A1
公开(公告)日：2018-05-31
申请号：US15499376
申请日：2017-04-27
Inventor： Kunmo CHU , Byonggwon SONG , Sunghoon PARK , Kiyeon YANG , Changseung LEE
IPC: C09D5/24 , C09D7/12 , C09D183/04 , H01L23/00
CPC classification number: C09D5/24 , C08K3/041 , C08K3/08 , C08K3/10 , C08K2201/001 , C08K2201/003 , C08K2201/011 , C09D7/61 , C09D7/69 , C09D7/70 , C09D11/52 , C09D183/04 , H01B1/22 , H01B1/24 , H01L21/4867 , H01L23/49883 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/33 , H01L24/48 , H01L2224/13101 , H01L2224/16225 , H01L2224/27515 , H01L2224/29105 , H01L2224/29191 , H01L2224/29193 , H01L2224/3003 , H01L2224/48091 , H01L2924/00014 , H01L2924/10161 , H01L2924/15159 , H01R13/2414 , H05K1/028 , H05K1/095 , H05K1/189 , H05K2201/026 , H05K2201/0323 , H05K2203/128 , H01L2924/014 , H01L2224/45099
Abstract: Provided are a paste material, a method of forming the paste material, a wiring member formed from the paste material, and an electronic device including the wiring member. The paste material may include a plurality of liquid metal particles and a polymer binder. The paste material may further include a plurality of nanofillers. At least some of the plurality of nanofillers may each have an aspect ratio equal to or greater than about 3. A content of the plurality of liquid metal particles may be greater than a content of the polymer binder and may be greater than a content of the plurality of nanofillers. The wiring member may be formed by using the paste material, and the wiring member may be used in various electronic devices.
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8.发明申请公开(公告)号：US20250098558A1
公开(公告)日：2025-03-20
申请号：US18828335
申请日：2024-09-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hajun SUNG , Minwoo CHOI , Youngjae KANG , Kiyeon YANG , Changseung LEE
Abstract: A chalcogenide-based memory material may include a ternary semiconductor compound having a composition represented by XaY′bSec, wherein the chalcogenide-based memory material may have an ovonic threshold-switching (OTS) characteristic, and a threshold voltage of the chalcogenide-based memory material may change according to a polarity and an intensity of an applied voltage. In XaY′bSec, X≠Y, a+b+c=1, a>0.12, b>0.18, c≥0.4, and X and Y′ independently may be different ones of In, Sb, Ga, Sn, Al, Ge, Si, and P. A memory device may include the chalcogenide-based memory material. An electronic apparatus may include the memory device.
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公开(公告)号：US20240074210A1
公开(公告)日：2024-02-29
申请号：US18164926
申请日：2023-02-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiyeon YANG , Bonwon Koo , Hajun Sung , Changseung Lee , Minwoo Choi
CPC classification number: H10B63/24 , H10B63/84 , H10N70/841 , H10N70/8828
Abstract: Disclosed are a memory device and a memory apparatus including the memory device. The memory device may include a first electrode, a second electrode spaced apart from the first electrode, an intermediate layer between the first electrode and the second electrode, and an interface layer in contact with the intermediate layer. The intermediate layer and the interface layer each may have ovonic threshold switching (OTS) characteristics. A material of the interface layer may have a threshold voltage shift greater than a threshold voltage shift (A Vth) of the intermediate layer.
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公开(公告)号：US20230354725A1
公开(公告)日：2023-11-02
申请号：US18349433
申请日：2023-07-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiyeon YANG , Dongho AHN , Changseung LEE
CPC classification number: H10N70/8828 , H10B63/24 , H10B63/84 , H10N70/066 , H10N70/231 , H10N70/8413
Abstract: A semiconductor apparatus may include a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.
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