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公开(公告)号:US20170194330A1
公开(公告)日:2017-07-06
申请号:US15255652
申请日:2016-09-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Donghun LEE , TaeYong KWON , Dongwon KIM
IPC: H01L27/11 , H01L29/417 , H01L27/092
Abstract: An SRAM device includes first, second and third transistors, which are used as a pass gate transistor, a pull-down transistor, and a pull-up transistor, respectively. A channel region of each transistor may include a plurality of semiconductor sheets that are vertically stacked on a substrate. The semiconductor sheets used as the channel regions of the first and second transistors may have a width greater than the semiconductor sheets used as channel regions of the third transistor.
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公开(公告)号:US20240348366A1
公开(公告)日:2024-10-17
申请号:US18632819
申请日:2024-04-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Donghwa HAN , Seho MYUNG , Kwonjong LEE , Donghun LEE , Min JANG
CPC classification number: H04L1/006 , H03M13/23 , H03M13/41 , H04L1/0054
Abstract: The disclosure relates to fifth generation (5G) or sixth generation (6G) communication systems to support higher data rates. A receiver of a communication system includes a transceiver configured to receive a signal encoded based on polarization-adjusted convolutional (PAC) coding from a transmitter, and a controller configured to calculate branch metrics of branches defined in a trellis associated with the PAC, calculate a path metric based on an accumulated sum of the branch metrics, determine a path assigned to each state based on the path metric, and estimate a codeword based on the determined path, wherein a number of paths assigned to each state is dynamically determined according to the number of active states, and wherein the active state includes at least one branch.
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公开(公告)号:US20240322937A1
公开(公告)日:2024-09-26
申请号:US18612995
申请日:2024-03-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Donghun LEE , Seho MYUNG , Kwonjong LEE , Min JANG
CPC classification number: H04L1/0003 , H04L1/0009 , H04L25/067
Abstract: The present disclosure relates to a 5G communication system or a 6G communication system for supporting higher data rates beyond a 4G communication system such as long term evolution (LTE). A method performed by a receiving node in a wireless communication system is provided. The method comprises receiving, from a transmitting node, a codeword comprising at least one information bit, estimating a bit value of a first information bit of the at least one information bit as a first estimation bit value, and determining whether a log-likelihood ratio (LLR) indicating a probability ratio between bit values that are able to be estimated as the bit value of the first information bit is included in a first interval. In case that the LLR is included in the first interval, the method further comprises determining the bit value of the first information bit as a first estimation bit value or a second estimation bit value which is different from the first estimation bit value, by comparing a reliability value determined based on the LLR with at least one threshold.
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公开(公告)号:US20240288878A1
公开(公告)日:2024-08-29
申请号:US18649866
申请日:2024-04-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Minwoo RYU , Seokhyun KANG , Jinhee KIM , Sangsik YOON , Donghun LEE
CPC classification number: G05D1/622 , B25J5/007 , B25J11/0085 , G05D1/243
Abstract: A robot includes: a main body, one or more optical sensors provided at a lower portion of the main body, memory storing at least one program, and at least one processor, comprising processing circuitry, electrically connected with the optical sensors and the memory and configured to execute at least one instruction of the program. Each optical sensor includes: one or more light emitting elements for emitting light of a first wavelength band, one or more light receiving elements for receiving light of a second wavelength band induced by the light of the first wavelength band, and one or more optical filter layers arranged on the one or more light receiving elements to pass the light of the second wavelength band. The at least on processor is configured to obtain first detection information based on two or more sensing values obtained through the one or more light receiving elements, and, control to avoid a position associated with the first detection information when the first detection information is obtained.
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公开(公告)号:US20190189778A1
公开(公告)日:2019-06-20
申请号:US16284843
申请日:2019-02-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sungil PARK , Changhee KIM , Yunil LEE , Mirco CANTORO , Junggun YOU , Donghun LEE
Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.
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公开(公告)号:US20240243891A1
公开(公告)日:2024-07-18
申请号:US18412712
申请日:2024-01-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Donghun LEE , Seho MYUNG , Kwonjong LEE , Jungsoo JUNG
IPC: H04L5/00
CPC classification number: H04L5/0094
Abstract: The present disclosure relates to a 5G communication system or a 6G communication system for supporting higher data rates beyond a 4G communication system such as long term evolution (LTE). A method performed by a receiving node in a wireless communication system is provided. The method may include receiving data including a plurality of information bits from a transmitting node, sequentially decoding information bits from a first information bit to a designated information bit among the received plurality of information bits by using a first scheme, and decoding information bits from a second information bit following the designated information bit among the plurality of information bits by using a second scheme that is different from the first scheme.
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公开(公告)号:US20240212581A1
公开(公告)日:2024-06-27
申请号:US18436692
申请日:2024-02-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Wonkeun PARK , Youngki JUNG , Donghwan KIM , Donghun LEE
CPC classification number: G09G3/32 , H01L25/167 , H01L27/124 , G09G2300/0408 , G09G2300/0413 , G09G2320/0233
Abstract: A display module includes: a substrate; a first driving circuit provided in a center area on the substrate in a vertical form; a first pixel array formed on a left area of the substrate relative to the first driving circuit, wherein the first pixel array may include a first plurality of pixels disposed in a matrix form; and a second pixel array formed on a right area of the substrate relative to the first driving circuit, wherein the second pixel array may include a second plurality of pixels disposed in the matrix form, wherein each pixel of the first plurality of pixels and each pixel of the second plurality of pixels may include a plurality of inorganic light emitting devices, and wherein each of the first pixel array and the second pixel array are separated from the first driving circuit by a pre-set distance.
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公开(公告)号:US20240171308A1
公开(公告)日:2024-05-23
申请号:US18069072
申请日:2022-12-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Donghun LEE , Seho MYUNG , Kwonjong LEE , Juho LEE , Min JANG
CPC classification number: H04L1/0059 , H03M13/23 , H03M13/2933
Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate than 4G communication systems such as LTE systems. The disclosure relates to a method and device for dynamically selecting, or simultaneously performing, PAC code-based fano decoding and/or list decoding in a wireless communication system. The method for performing PAC code-based decoding by a reception device in a wireless communication system comprises identifying a specific criterion variable related to a channel state for selecting at least one of fano decoding or list decoding for a signal received from a transmission device, comparing the specific criterion variable related to the channel state with a threshold, performing the fano decoding in case that the specific criterion variable related to the channel state satisfies the threshold, and performing the list decoding in case that the specific criterion variable related to the channel state does not satisfy the threshold.
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公开(公告)号:US20230277024A1
公开(公告)日:2023-09-07
申请号:US18316713
申请日:2023-05-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeyoon JEONG , Hyoungjin LEE , Dohyeong HWANG , Minwoo RYU , Sangsik YOON , Donghun LEE
CPC classification number: A47L9/2805 , A47L9/2852 , A47L9/2894 , G05D1/024 , G05D1/0246 , G05D1/0255 , G05D1/12 , B25J5/007 , B25J11/0085 , B25J9/1697 , B25J13/003 , A47L2201/04 , G05D2201/0203
Abstract: A controlling method of a cleaning robot is provided. The controlling method includes obtaining lidar data while a lidar sensor rotates multiple times, calculating a reference value which is the average value of distances from a subject according to angles, based on the obtained lidar data, after the reference value is calculated, comparing the obtained lidar data with the reference value, sensing a motion of an object based on a comparison result, and determining that the object is located in a rotation section where the motion has been detected.
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公开(公告)号:US20200185393A1
公开(公告)日:2020-06-11
申请号:US16793912
申请日:2020-02-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Donghun LEE , TaeYong KWON , Dongwon KIM
IPC: H01L27/11 , H01L29/417 , H01L27/092 , H01L27/11582
Abstract: An SRAM device includes first, second and third transistors, which are used as a pass gate transistor, a pull-down transistor, and a pull-up transistor, respectively. A channel region of each transistor may include a plurality of semiconductor sheets that are vertically stacked on a substrate. The semiconductor sheets used as the channel regions of the first and second transistors may have a width greater than the semiconductor sheets used as channel regions of the third transistor.
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