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    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    11.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20140206116A1

    公开(公告)日：2014-07-24

    申请号：US14153442

    申请日：2014-01-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Wook HWANG ,  Sam Mook KANG ,  Han Kyu SEONG

    IPC: H01L33/00

    CPC classification number: H01L33/005 ,  H01L33/24

    Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures.

    Abstract translation: 提供了一种半导体发光器件及其制造方法。 一种制造半导体发光器件的多个发光纳米结构的方法，包括：在第一种类的半导体晶种层上形成多个第一导电型半导体芯，每个第一导电型半导体芯通过绝缘膜上的开口形成; 在每个第一导电型半导体芯上形成有源层; 在每个有源层上形成使用掩模图形的第二导电类型半导体层以覆盖有源层，以形成多个发光纳米结构; 以及在所述多个发光纳米结构上形成电极。

    METHOD OF MANUFACTURING DISPLAY MODULE USING LED
    12.
    发明申请
    METHOD OF MANUFACTURING DISPLAY MODULE USING LED 审中-公开

    公开(公告)号：US20190371779A1

    公开(公告)日：2019-12-05

    申请号：US16185602

    申请日：2018-11-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ji Hye YEON ,  Su Hyun JO ,  Sung Hyun SIM ,  Ha Nul YOO ,  Yong Il KIM ,  Han Kyu SEONG

    IPC: H01L25/00 ,  H01L25/18 ,  H01L23/00 ,  H01L33/50

    Abstract: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

    LIGHT SOURCE MODULE, DISPLAY PANEL, DISPLAY APPARATUS AND METHODS FOR MANUFACTURING THE SAME
    13.
    发明申请
    LIGHT SOURCE MODULE, DISPLAY PANEL, DISPLAY APPARATUS AND METHODS FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190333964A1

    公开(公告)日：2019-10-31

    申请号：US16503956

    申请日：2019-07-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jin Sub LEE ,  Han Kyu SEONG ,  Yong Il KIM ,  Jung Sub KIM ,  Seul Gee LEE

    IPC: H01L27/15 ,  H01L33/50 ,  H05B33/08

    Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    15.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20170125631A1

    公开(公告)日：2017-05-04

    申请号：US15235464

    申请日：2016-08-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin Sub LEE ,  Jung Sub KIM ,  Han Kyu SEONG ,  Soon Jo KWON ,  Ji Hye YEON ,  Dong Gun LEE

    IPC: H01L33/06 ,  H01L33/54 ,  H01L33/14 ,  H01L33/62 ,  H01L33/32 ,  H01L33/00

    Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer, and including: a plurality of quantum barrier layers; and a plurality of quantum well layers containing indium (In), the plurality of quantum barrier layers and the plurality of quantum well layers being alternately stacked on each other, the plurality of quantum well layers comprising a first quantum well layer and a second quantum well layer; and a second conductivity-type semiconductor layer disposed on the active layer, wherein the first quantum well layer is disposed closer to the first conductivity-type semiconductor layer than the second quantum well layer, wherein the second quantum well layer is disposed closer to the second conductivity-type semiconductor layer than the first quantum well layer, wherein a thickness of the second quantum well layer is greater than a thickness of the first quantum well layer, and wherein each of the first and the second quantum well layers comprises at least one graded layer having a varying amount of In composition, and the at least one graded layer of the second quantum well layer has a greater thickness than the at least one graded layer of the first quantum well layer.

    METHOD OF MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT-EMITTING DEVICE
    16.
    发明申请
    METHOD OF MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    制造纳米结构半导体发光器件的方法

    公开(公告)号：US20160099376A1

    公开(公告)日：2016-04-07

    申请号：US14867659

    申请日：2015-09-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hyeok HEO ,  Jin Sub LEE ,  Young Jin CHOI ,  Hyun Seong KUM ,  Ji Hye YEON ,  Dae Myung CHUN ,  Jung Sub KIM ,  Han Kyu SEONG

    IPC: H01L33/00 ,  H01L33/14 ,  H01L33/06 ,  H01L33/24 ,  H01L33/08

    CPC classification number: H01L33/005 ,  H01L33/06 ,  H01L33/08 ,  H01L33/145 ,  H01L33/24

    Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.

    Abstract translation: 根据一个示例性实施例，一种制造纳米结构半导体发光器件的方法包括：将第一导电型氮化物半导体材料的纳米孔彼此间隔开，并形成包含活性层的多层壳， 在每个纳米孔的表面上的第二导电型氮化物半导体层。 通过控制源气体通量，源气体流量，室压力，生长温度和生长速率的至少一个工艺参数来形成多层壳体的至少一部分，从而具有更高的膜厚度 均匀性

    NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    17.
    发明申请
    NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    纳米结构半导体发光器件及其制造方法

    公开(公告)号：US20140209859A1

    公开(公告)日：2014-07-31

    申请号：US14165112

    申请日：2014-01-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Nam Goo CHA ,  Geon Wook YOO ,  Han Kyu SEONG

    IPC: H01L33/04 ,  H01L33/20 ,  H01L33/00

    CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

    Abstract: A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores.

    Abstract translation: 一种制造纳米结构半导体发光器件的方法，包括提供由第一导电型半导体形成的基极层。 在基底层上形成包括蚀刻停止层的掩模。 在掩模中形成多个开口以暴露其中的区域。 通过在基底层的曝光区域上生长第一导电型半导体以填充多个开口来形成多个纳米孔。 通过使用蚀刻停止层来部分地去除掩模以暴露多个纳米孔的侧面部分。 在多个纳米孔的表面上依次生长有源层和第二导电型半导体层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
    18.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20140203240A1

    公开(公告)日：2014-07-24

    申请号：US14152465

    申请日：2014-01-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung Wook HWANG ,  Han Kyu SEONG ,  Nam Goo CHA

    IPC: H01L33/50 ,  H01L33/00

    CPC classification number: H01L33/24 ,  H01L33/005 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014

    Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.

    Abstract translation: 一种半导体发光器件，包括：衬底; 由第一导电型半导体制成的基底层，设置在基板上; 多个纳米尺度的发光单元，其设置在所述基底层的上表面的区域中，并且包括从所述基底层的上表面突出的第一导电型纳米半导体层，设置在所述第一导电性的纳米活性层 型纳米半导体层和设置在纳米活性层上的第二导电型纳米半导体层; 以及设置在基层的上表面的不同区域并具有层叠有源层的发光层叠体。

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