公开(公告)号：US20180350872A1

公开(公告)日：2018-12-06

申请号：US15850232

申请日：2017-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pun Jae CHOI ,  Jacob Chang-Lin TARN ,  Han Kyu SEONG ,  Jin Hyuk SONG ,  Yoon Joon CHOI

IPC: H01L27/15 ,  H01L33/06 ,  H01L33/18 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  H01L25/075 ,  F21K9/232 ,  F21K9/235 ,  F21K9/237

CPC classification number: H01L27/156 ,  F21K9/232 ,  F21K9/235 ,  F21K9/237 ,  F21V31/005 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L31/00 ,  H01L31/0352 ,  H01L31/035236 ,  H01L31/105 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/387 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a plurality of light emitting cells having first and second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer therebetween, an insulating layer on the second surface of the plurality of light emitting cells and having first and second openings defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively, a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells, a transparent support substrate on the first surface of the plurality of light emitting cells, and a transparent bonding layer between the plurality of light emitting cells and the transparent support substrate.