Abstract:
A tape film package is provided including an insulating pattern; a via contact in a via hole in the insulating pattern; first interconnection patterns extending from the via contact to a cutting surface of the insulating pattern; and second interconnection patterns connected to the via contact below the insulating pattern. The second interconnection patterns are parallel to the first interconnection patterns and spaced apart from the cutting surface of the insulating pattern.
Abstract:
Semiconductor packages are provided. A semiconductor package may include a semiconductor chip. The semiconductor package may include a substrate and first and second conductive regions on the substrate. In some embodiments, the substrate may be a flexible substrate, and the first and second conductive regions may be on the same surface of the flexible substrate. Display devices including semiconductor packages are also provided. In some embodiments, a display device may include a flexible substrate that is bent such that first and second conductive regions thereof are connected to each other via an intervening third conductive region.
Abstract:
A semiconductor package is provided. The semiconductor package may include a base film having a first surface and a second surface opposite the first surface, an interconnection pattern on the first surface of the base film, and a ground layer on the second surface of the base film. The semiconductor package may further include a semiconductor chip on the first surface of the base film within the first region and a via contact plug in the second region that penetrates the base film and is configured to electrically connect the interconnection pattern with the ground layer when electrostatic discharge occurs through the via contact plug.
Abstract:
Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a circuit substrate, a semiconductor chip mounted on the circuit substrate, and a thermal radiation film covering the semiconductor chip on the circuit substrate. The semiconductor chip includes first lateral surfaces opposite to each other in a first direction and second lateral surfaces opposite to each other in a second direction that intersects the first direction. A first width of the first lateral surface is less than a second width of the second lateral surface. The thermal radiation film covers a top surface of the semiconductor chip and entirely surrounds the first and second lateral surfaces of the semiconductor chip. The thermal radiation film has slits directed toward the first lateral surfaces from ends of the thermal radiation film.
Abstract:
A semiconductor package includes a film substrate; a wiring layer provided on the film substrate; and a semiconductor chip provided on the wiring layer and electrically connected to the wiring layer. The film substrate includes a first layer, wherein the first layer is an insulating layer having the wiring layer thereon. The film substrate further includes a second layer, wherein the second layer is attached to a bottom of the first layer and comprises a gas. The second layer is configured to be peeled off of the first layer.
Abstract:
A chip on film package includes a flexible base film having a first surface and a second surface opposite to each other that includes at least one through hole therein, a plurality of wirings disposed on the first surface and the second surface of the base film, respectively, that include a first lead and a second lead connected to each other through the at least one through hole, and a display panel driving chip and a touch panel sensor chip, each mounted on any one of the first surface and the second surface of the base film, wherein at least one of the display panel driving panel and the touch panel sensor chip is electrically connected to the first and second leads.
Abstract:
A COF substrate may include a base film, first upper conductive patterns, at least one second upper conductive pattern and lower conductive patterns. The first upper conductive patterns may be arranged on an upper surface of the base film. Each of the first upper conductive patterns may have an inner pattern and an outer pattern spaced apart from each other. The second upper conductive pattern may be arranged on the upper surface of the base film between the first upper conductive patterns. The lower conductive patterns may be arranged on a lower surface of the base film. The lower conductive patterns may be electrically connected between the inner pattern and the outer pattern. Thus, conductive materials causing a short between the panel patterns may not exist between the inner pattern and the outer pattern on the upper surface of the base film.
Abstract:
A chip on film package includes a flexible base film having a first surface and a second surface opposite to each other that includes at least one through hole therein, a plurality of wirings disposed on the first surface and the second surface of the base film, respectively, that include a first lead and a second lead connected to each other through the at least one through hole, and a display panel driving chip and a touch panel sensor chip, each mounted on any one of the first surface and the second surface of the base film, wherein at least one of the display panel driving panel and the touch panel sensor chip is electrically connected to the first and second leads.
Abstract:
A chip-on-film package may include a film substrate including a chip region and an edge region, a semiconductor chip provided on the chip region and mounted on a top surface of the film substrate, the semiconductor chip including a chip pad adjacent to a bottom surface thereof, an input line and an output line provided on the edge region and disposed on the top surface of the film substrate, a connection terminal interposed between the film substrate and the semiconductor chip, and a redistribution pattern disposed between the semiconductor chip and the connection terminal.
Abstract:
A semiconductor device includes: a substrate including a semiconductor chip region, a guard ring region adjacent to the semiconductor chip region, and an edge region adjacent to the guard ring region; a first interlayer insulating layer disposed on the substrate; a wiring structure disposed inside the first interlayer insulating layer and in the guard ring region, wherein the wiring structure includes a first wiring layer and a second wiring layer disposed above the first wiring layer; and a trench configured to expose at least a part of the first interlayer insulating, layer in the edge region, wherein the trench includes a first bottom surface and a second bottom surface formed at a level different from that of the first bottom surface, wherein the first bottom surface is formed between the wiring structure and the second bottom surface, and the second bottom surface is formed adjacent to the first bottom surface.