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    IMAGE SENSOR
    11.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20210175269A1

    公开(公告)日：2021-06-10

    申请号：US16996047

    申请日：2020-08-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Masato FUJITA ,  Yunki LEE ,  Eunsub SHIM ,  Kyungho LEE ,  Bumsuk KIM ,  Taehan KIM

    IPC: H01L27/146 ,  H04N5/355 ,  H04N5/369 ,  H04N5/3745

    Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.

    IMAGE SENSOR
    12.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20180191974A1

    公开(公告)日：2018-07-05

    申请号：US15805368

    申请日：2017-11-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun Sub SHIM ,  Kyungho LEE

    IPC: H04N5/355 ,  H04N5/243 ,  H04N5/345

    CPC classification number: H04N5/35581 ,  H04N5/243 ,  H04N5/345 ,  H04N5/35563 ,  H04N5/3559 ,  H04N5/3575 ,  H04N5/37457 ,  H04N9/045

    Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line.

    IMAGE SENSORS
    13.
    发明申请
    IMAGE SENSORS 有权
    图像传感器

    公开(公告)号：US20160027821A1

    公开(公告)日：2016-01-28

    申请号：US14675915

    申请日：2015-04-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungchak AHN ,  Youngsun OH ,  Kyungho LEE ,  Dongyoung JANG

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

    Abstract: An image sensor includes a substrate including a pixel region and a peripheral circuit region, and a first device isolation layer disposed in the substrate to define a plurality of unit pixels that are adjacent to each other in a first direction in the pixel region. Each of the plurality of unit pixels includes at least one light sensing element disposed in the substrate. The image sensor includes an interlayer insulating structure on the substrate, and a first blocking structure disposed on the first device isolation layer and penetrating the interlayer insulating structure. The first blocking structure is disposed between the plurality of unit pixels when viewed from a plan view. The first blocking structure extends in a second direction intersecting the first direction when viewed from a plan view.

    Abstract translation: 图像传感器包括：基板，包括像素区域和外围电路区域;以及第一器件隔离层，设置在所述基板中，以限定像素区域中沿着第一方向彼此相邻的多个单位像素。 多个单位像素中的每一个包括设置在基板中的至少一个感光元件。 图像传感器包括在基板上的层间绝缘结构，以及设置在第一器件隔离层上并穿透层间绝缘结构的第一阻挡结构。 当从平面图观察时，第一阻挡结构设置在多个单位像素之间。 当从俯视图观察时，第一阻挡结构沿与第一方向交叉的第二方向延伸。

    IMAGE SENSOR
    14.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240186355A1

    公开(公告)日：2024-06-06

    申请号：US18437691

    申请日：2024-02-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Masato FUJITA ,  Doosik SEOL ,  Kyungduck LEE ,  Kyungho LEE ,  Taesub JUNG

    IPC: H01L27/146 ,  H04N25/704 ,  H04N25/79

    CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N25/704 ,  H04N25/79

    Abstract: An image sensor includes a pixel array and a logic circuit. The pixel array includes a pixel isolation layer between a plurality of pixels. Each of the plurality of pixels include a pixel circuit below at least one photodiode. The logic circuit acquires a pixel signal from the plurality of pixels. The pixel array includes at least one autofocusing pixel, which includes a first photodiode, a second photodiode, a pixel internal isolation layer between the first and second photodiodes, and a microlens on the first and second photodiodes. The pixel internal isolation layer includes a first pixel internal isolation layer and a second pixel internal isolation layer, separated from each other in a first direction, perpendicular to the upper surface of the substrate, and the first pixel internal isolation layer and the second pixel internal isolation layer include different materials.

    IMAGE SENSOR AND OPERATING METHOD THEREOF
    15.
    发明申请
    IMAGE SENSOR AND OPERATING METHOD THEREOF 有权

    公开(公告)号：US20230008501A1

    公开(公告)日：2023-01-12

    申请号：US17853032

    申请日：2022-06-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub SHIM ,  Changhyun PARK ,  Kyungho LEE

    IPC: H04N5/353 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/343

    Abstract: An image sensor and an operating method of the image sensor may include a pixel array including a plurality of pixels; a controller configured to generate a pre-shutter driving signal associated with a pre-shutter operation, the pre-shutter driving signal generated before a first shutter operation and a first read operation corresponding to photographing a first frame is performed; a row driver configured to drive first control signals to the pixel array based on the pre-shutter driving signal, the first control signals associated with the pre-shutter operation; and the pixel array is configured to perform the pre-shutter operation in response to the first control signals, wherein levels of the first control signals correspond to levels of second control signals, the second control signals associated with the first read operation.

    IMAGE SENSOR CONTROLLING A CONVERSION GAIN IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME
    16.
    发明申请
    IMAGE SENSOR CONTROLLING A CONVERSION GAIN IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME 有权

    公开(公告)号：US20220345649A1

    公开(公告)日：2022-10-27

    申请号：US17860878

    申请日：2022-07-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jungbin YUN ,  Hwanwoong KIM ,  Eunsub SHIM ,  Kyungho LEE ,  Hongsuk LEE

    IPC: H04N5/355 ,  H04N5/343 ,  H04N5/369 ,  H04N5/374

    Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.

    CMOS IMAGE SENSORS
    17.
    发明申请
    CMOS IMAGE SENSORS 有权

    公开(公告)号：US20220293645A1

    公开(公告)日：2022-09-15

    申请号：US17826708

    申请日：2022-05-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Bin YUN ,  Kyungho LEE ,  Sung-Ho CHOI

    IPC: H01L27/146

    Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

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