公开(公告)号：US20240274638A1

公开(公告)日：2024-08-15

申请号：US18648814

申请日：2024-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin YUN ,  Kyungho LEE ,  Sung-Ho CHOI

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

公开(公告)号：US20220304156A1

公开(公告)日：2022-09-22

申请号：US17679735

申请日：2022-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho LEE ,  Yunoh CHI

IPC: H05K1/14 ,  H05K1/11 ,  H05K3/00

Abstract: An electronic device is provided. The electronic device comprises an interposer disposed between first circuit board and second circuit board, and including an opening area and for accommodating the at least one electronic component, and the interposer comprises a board including an inner surface that faces the opening area and an outer surface that faces an opposite direction to the inner surface, wherein the outer surface is formed in a convexo-concave form having a plurality of first concave areas and a plurality of first concave areas, and a side conductive member disposed on the first concave areas and the first concave areas of the outer surface, and formed along the convexo-concave form of the outer surface.

公开(公告)号：US20220190007A1

公开(公告)日：2022-06-16

申请号：US17465217

申请日：2021-09-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuncheol KIM ,  Kyungho LEE ,  Kazunori KAKEHI ,  Doosik SEOL ,  Kyungduck LEE ,  Taesub JUNG ,  Masato FUJITA

IPC: H01L27/146

Abstract: An image sensor includes a substrate having first and second surfaces, pixel regions arranged in a direction parallel to the first surface, first and second photodiodes isolated from each other in each of the pixel regions, a first device isolation film between the pixel regions, a pair of second device isolation films between the first and second photodiodes and extending from the first device isolation film, a doped layer adjacent to the pair of second device isolation films and extending from the second surface to a predetermined depth and spaced apart from the first surface, the doped layer being isolated from the first device isolation film, and a barrier area between the pair of second device isolation films and having a potential greater than a potential of a portion of the substrate adjacent to the barrier area.

公开(公告)号：US20220093665A1

公开(公告)日：2022-03-24

申请号：US17328249

申请日：2021-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heegeun PARK ,  Kyungho LEE ,  Jangho MOON ,  Minchul LEE ,  Soyoung JEONG

IPC: H01L27/146

Abstract: Disclosed is an image sensor comprising a subtrate that includes a plurality of pixel groups each including a plurality of pixel regions, a plurality of color filters two-dimensionally arraned on a first surface of the substrate, and a pixel separation structure in the substrate. The pixel separation structure includes a first part that defines each of the pixel regions and a second part connected to the first part. The second part runs across an inside of each of the pixel regions.

公开(公告)号：US20200168644A1

公开(公告)日：2020-05-28

申请号：US16775519

申请日：2020-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin YUN ,  Kyungho LEE ,  Sung-Ho ChOI

IPC: H01L27/146

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

公开(公告)号：US20170012066A1

公开(公告)日：2017-01-12

申请号：US15090989

申请日：2016-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuksoon CHOI ,  Jungchak AHN ,  Hyuk AN ,  Kyungho LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645

Abstract: An image sensor includes a first conductivity type first impurity region surrounded by a pixel isolation layer surrounds; a first conversion device isolation layer intersecting the first impurity region in a first direction; a second conductivity type second impurity region disposed on a first side surface of the first conversion device isolation layer; a second conductivity type third impurity region disposed on a second side surface of the first conversion device isolation layer opposite the first side surface; and a second conversion device isolation layer intersecting the first impurity region in a second direction perpendicular to the first direction. The second impurity region and the third impurity region are disposed inside the first impurity region.

Abstract translation: 图像传感器包括由像素隔离层包围的第一导电类型的第一杂质区域; 在第一方向上与第一杂质区相交的第一转换器件隔离层; 第二导电类型的第二杂质区域，设置在第一转换器件隔离层的第一侧表面上; 第二导电类型的第三杂质区域，设置在与第一侧表面相对的第一转换器件隔离层的第二侧表面上; 以及在与第一方向垂直的第二方向上与第一杂质区交叉的第二转换器件隔离层。 第二杂质区域和第三杂质区域设置在第一杂质区域内。

公开(公告)号：US20250169216A1

公开(公告)日：2025-05-22

申请号：US19029586

申请日：2025-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin YUN ,  Kyungho LEE ,  Sung-Ho CHOI

IPC: H10F39/00 ,  H10F39/18

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

公开(公告)号：US20250060787A1

公开(公告)日：2025-02-20

申请号：US18937655

申请日：2024-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho LEE ,  Youngsun LEE ,  Jiwon KIM ,  Kwanghee RYU ,  Jungchul AN ,  Chulhyo YOON ,  Seungki CHOI

IPC: G06F1/16 ,  G06F3/0354 ,  G06F3/041 ,  H04M1/02

Abstract: An electronic device may include: a first housing; a second housing; a hinge structure; a display; and a sensor panel, wherein the sensor panel comprises: a support layer which comprises a polymer inclusive material and is in contact with an adhesive material arranged on at least one of a first surface of the first housing and a third surface of the second housing; a shielding layer arranged on the support layer; a first insulating layer arranged on the shielding layer; a first conductive pattern arranged on the first insulating layer; a second insulating layer arranged on the first conductive pattern; a second conductive pattern arranged on the second insulating layer; and a third insulating layer arranged on the second conductive pattern and facing one surface of the display, wherein the thickness of at least one of the first insulating layer and the third insulating layer is greater than the thickness of the second insulating layer.

公开(公告)号：US20230362505A1

公开(公告)日：2023-11-09

申请号：US18221921

申请日：2023-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungbin YUN ,  Hwanwoong KIM ,  Eunsub SHIM ,  Kyungho LEE ,  Hongsuk LEE

IPC: H04N5/335 ,  H01L27/146

CPC classification number: H04N25/59 ,  H04N25/709 ,  H04N25/42 ,  H04N25/76 ,  H01L27/14603 ,  H01L27/14645 ,  H01L27/14621

Abstract: An image sensor includes: a first pixel connected to a column line; and a second pixel connected to the column line. Each of the first pixel and the second pixel includes: one photodiode; a first floating diffusion region; a second floating diffusion region; one first transistor connected between the one photodiode and the first floating diffusion region; a second transistor connected between the first floating diffusion region and the second floating diffusion region; a third transistor connected to the second floating diffusion region; a fourth transistor including a gate connected to the first floating diffusion region; and a fifth transistor including a drain connected to a source of the fourth transistor and a source connected to the column line. The second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are electrically connected without an intermediate transistor.

公开(公告)号：US20220344389A1

公开(公告)日：2022-10-27

申请号：US17572180

申请日：2022-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghyung PYO ,  Jungbin YUN ,  Kyungho LEE ,  Seungjoon LEE ,  Wooseok CHOI

IPC: H01L27/146 ,  H04N5/369

Abstract: An image sensor is provided. The image sensor includes: a pixel array including first and second pixel groups, each of which includes unit pixels arranged in 4×4 array, each of the unit pixels including a photodiode provided, and the first and second pixel groups being alternately disposed in multiple directions; a logic circuit configured to acquire pixel signals from the unit pixels; first microlenses provided on corresponding unit pixels in the first pixel groups; and second microlenses provided on four corresponding unit pixels of the unit pixels included in the second pixel groups. Each of the first and second pixel groups includes a device isolation layer provided between the unit pixels, and a color filter provided on the first surface, and each of the second pixel groups includes an overflow region configured to move electrical charges between adjacent photodiodes.