公开(公告)号：US20210269715A1

公开(公告)日：2021-09-02

申请号：US17186434

申请日：2021-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Soo Kyung KWON ,  Seon-Yeong KIM ,  Yong Wook KIM ,  Ji-Yeong KIM ,  Eun Joo JANG ,  Sungwoo HWANG

IPC: C09K11/88 ,  C09K11/02 ,  H01L27/32 ,  H01L51/50

Abstract: A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

公开(公告)号：US20170094723A1

公开(公告)日：2017-03-30

申请号：US15275551

申请日：2016-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Yun KIM ,  Jong Wook ROH ,  Jongmin LEE ,  Doh Won JUNG ,  Sungwoo HWANG ,  Chan KWAK ,  Jinyoung HWANG

IPC: H05B3/12 ,  C01G23/04 ,  C01G55/00 ,  H01B1/02 ,  B22F1/00

Abstract: An electrical conductor including: a first conductive layer including a plurality of metal nanowires; and a second conductive layer disposed on a surface of the first conductive layer, wherein the second conductive layer includes a plurality of metal oxide nanosheets, wherein in the first conductive layer, a metal nanowire of the plurality of metal nanowires contacts at least two metal oxide nanosheets of the plurality of metal oxide nanosheets, and wherein the plurality of metal oxide nanosheets includes an electrical connection between contacting metal oxide nanosheets.

公开(公告)号：US20170092387A1

公开(公告)日：2017-03-30

申请号：US15275538

申请日：2016-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Yun KIM ,  Jong Wook ROH ,  Woojin LEE ,  Jongmin LEE ,  Doh Won JUNG ,  Sungwoo HWANG ,  Chan KWAK

IPC: H01B1/08 ,  H01B1/16 ,  H01B5/14 ,  H01B13/00

CPC classification number: H01B1/08 ,  G06F3/041 ,  G06F2203/04102 ,  G06F2203/04103 ,  H01B1/00 ,  H01B1/16 ,  H01B5/14 ,  H01B13/0036

Abstract: An electrical conductor including a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein the plurality of ruthenium oxide nanosheets include an electrical connection between contacting ruthenium oxide nanosheets and at least one of the plurality of ruthenium oxide nanosheets includes a plurality of metal clusters on a surface of the at least one ruthenium oxide nanosheet.

公开(公告)号：US20160156883A1

公开(公告)日：2016-06-02

申请号：US14953569

申请日：2015-11-30

Applicant: California Institute of Technology ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghoon HAN ,  Yu HORIE ,  Andrei FARAON ,  Sungwoo HWANG

IPC: H04N9/04 ,  G02B5/20 ,  G06T5/20

CPC classification number: G02B5/201 ,  G03B33/16 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14685

Abstract: An image sensor includes an optical sensor layer including a plurality of light-sensitive cells configured to sense light to generate electrical signals, and a color filter array layer disposed on the optical sensor layer and including a plurality of color filters respectively facing the plurality of light-sensitive cells. Each of the plurality of color filters includes a nanostructure in which a first material having a first refractive index and a second material having a second refractive index higher than the first refractive index are arranged. The first material and the second material are alternatively positioned at an interval less than a central wavelength of a color of the color filter. Thus, a thin image sensor having good wavelength selectivity and suitable for obtaining high resolution images is provided.

Abstract translation: 图像传感器包括：光传感器层，包括被配置为感测光以产生电信号的多个感光单元;以及滤色器阵列层，设置在光学传感器层上，并且包括分别面对多个光的多个滤色器 敏感细胞。 多个滤色器中的每一个包括其中布置具有第一折射率的第一材料和具有高于第一折射率的第二折射率的第二材料的纳米结构。 第一材料和第二材料可选择地以小于滤色器的颜色的中心波长的间隔定位。 因此，提供了具有良好的波长选择性并且适于获得高分辨率图像的薄图像传感器。

公开(公告)号：US20150280129A1

公开(公告)日：2015-10-01

申请号：US14589396

申请日：2015-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  The Board of Trustees of the Leland Stanford Junior University

Inventor： Tae-Ho KIM ,  Alex CHORTOS ,  Zhenan BAO ,  Sungwoo HWANG

IPC: H01L51/00 ,  H01L51/10 ,  H01L51/05 ,  H01L51/56

CPC classification number: H01L51/0097 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/10 ,  Y02E10/549 ,  Y02P70/521

Abstract: Provided are stretchable devices, methods of manufacturing the same, and electronic apparatuses including the stretchable devices. A stretchable device may include first and second material layers, each including an elastomeric polymer, and an organic layer that is disposed between the first and second material layers. The organic layer may include an organic semiconductor. As least one electrode element may be embedded in at least one of the first and second material layers. The at least one electrode element may be electrically connected to the organic layer. The stretchable device may be stretchable in a direction parallel to the organic layer. The stretchable device may be a transistor, and may further include a gate electrode.

Abstract translation: 提供可拉伸装置，其制造方法和包括可拉伸装置的电子设备。 可拉伸装置可以包括第一和第二材料层，每个材料层包括弹性聚合物，以及设置在第一和第二材料层之间的有机层。 有机层可以包括有机半导体。 至少一个电极元件可以嵌入在第一和第二材料层中的至少一个中。 所述至少一个电极元件可电连接到有机层。 可拉伸装置可以在与有机层平行的方向上是可拉伸的。 可拉伸装置可以是晶体管，并且还可以包括栅电极。

公开(公告)号：US20230148437A9

公开(公告)日：2023-05-11

申请号：US16800468

申请日：2020-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Seunghoon HAN ,  Amir ARBABI ,  Andrei FARAON ,  Sungwoo HWANG ,  Jangwoo YOU ,  Byounglyong CHOI ,  Hyeonsoo PARK

IPC: G02B9/14 ,  G02B9/10 ,  G02B5/18 ,  G02B13/00 ,  G02B9/12 ,  G02B13/18 ,  G02B3/08 ,  G02B1/00 ,  H04N5/225

CPC classification number: G02B9/14 ,  H05K999/99 ,  G02B9/10 ,  G02B5/1876 ,  G02B13/003 ,  G02B13/0035 ,  G02B9/12 ,  G02B13/0055 ,  G02B13/18 ,  G02B3/08 ,  G02B1/002 ,  H04N5/2254 ,  G02B2207/101

Abstract: Provided an imaging apparatus including a first optical device, a second optical device disposed such that light transmitted through the first optical device is incident on the second optical device, and a third optical device disposed such that light transmitted through the second optical device is incident on the third optical device, wherein at least one of the first optical device, the second optical device, and the third optical device includes a plurality of nanostructures, and heights of at least two nanostructures of the plurality of nanostructures are different from each other.

公开(公告)号：US20220406974A1

公开(公告)日：2022-12-22

申请号：US17846143

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seon-Yeong KIM ,  Yong Wook KIM ,  Soo Kyung KWON ,  Ji-Yeong KIM ,  Sungwoo HWANG

IPC: H01L33/50 ,  C01G9/00 ,  C30B33/06

Abstract: Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal, wherein the nanostructures further include tellurium, wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1, wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.

公开(公告)号：US20220119708A1

公开(公告)日：2022-04-21

申请号：US17503436

申请日：2021-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong KIM ,  Yong Wook KIM ,  Soo Kyung KWON ,  Ji-Yeong KIM ,  Sungwoo HWANG

IPC: C09K11/88 ,  H01L51/50 ,  C01B19/04 ,  C09K11/70 ,  C01G9/00

Abstract: A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.

公开(公告)号：US20220017818A1

公开(公告)日：2022-01-20

申请号：US17490552

申请日：2021-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Nayoun WON ,  Sungwoo HWANG ,  Eun Joo JANG ,  Soo Kyung KWON ,  Yong Wook KIM ,  Jihyun MIN ,  Garam PARK ,  Shang Hyeun PARK ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yong Seok HAN

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L51/50 ,  H01L27/32 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US20210222061A1

公开(公告)日：2021-07-22

申请号：US17226154

申请日：2021-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook JANG ,  Yuho WON ,  Sungwoo HWANG ,  Ji Yeong KIM ,  Eun Joo JANG

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L51/50 ,  H01L27/32 ,  C09D133/00 ,  C08F220/06 ,  C09D133/02

Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.