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公开(公告)号:US20210140049A1
公开(公告)日:2021-05-13
申请号:US16827895
申请日:2020-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Narae HAN , Jeonggyu SONG , Yongsung KIM , Jooho LEE
IPC: C23C16/56 , H01L27/108 , H01L27/11502 , C23C16/455 , C23C14/58 , C23C14/08 , C23C16/40 , C01G15/00 , C01G27/02 , C01F7/02 , C01G25/02
Abstract: A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an InxOy-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.
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12.
公开(公告)号:US20230399749A1
公开(公告)日:2023-12-14
申请号:US18455941
申请日:2023-08-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Bo-Eun PARK , Jooho LEE , Yongsung KIM , Jeonggyu SONG
CPC classification number: C23C16/56 , C23C16/45525 , C23C14/5806 , C23C16/40 , C01G27/02 , C23C14/08 , H10B51/00 , H10B53/00 , C01P2004/24 , C01P2002/72 , C01P2006/40 , C01P2002/76
Abstract: A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.
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公开(公告)号:US20230206617A1
公开(公告)日:2023-06-29
申请号:US18068209
申请日:2022-12-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Daehyun BAN , Daehun KIM , Yongsung KIM , Dongwan LEE , Juyoung LEE
Abstract: An apparatus is provided. The apparatus includes an input/output interface configured to receive an image and output a result, a memory storing one or more instructions for processing the image by using a convolutional neural network, and a processor configured to process the image by executing the one or more instructions, wherein the convolutional neural network (CNN) may include one or more spatial transformation modules, and the spatial transformation module may include a spatial transformer configured to apply a spatial transform to first input data that is the image or an output of a previous spatial transformation module, by using a spatial transformation function, a first convolutional layer configured to perform a convolution operation between the first input data to which the spatial transform is applied and a first filter, and a spatial inverse transformer configured to apply a spatial inverse transform to an output of the first convolutional layer.
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公开(公告)号:US20230169679A1
公开(公告)日:2023-06-01
申请号:US17963419
申请日:2022-10-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongsung KIM , Hyunsoo CHOI , Daehyun BAN , Dongwan LEE , Juyoung LEE
CPC classification number: G06T7/73 , G06T3/60 , G06T2207/30196 , G06T2207/20081
Abstract: A server for pose estimation of a person and an operating method of the server are provided. The operating method includes obtaining an original image including a person, generating a plurality of input images by rotating the original image, obtaining first pose estimation results respectively corresponding to the plurality of input images, by inputting the plurality of input images to a pose estimation model, applying weights to the first pose estimation results respectively corresponding to the plurality of input images, and obtaining a second pose estimation result, based on the first pose estimation results to which the weights are applied, wherein the first pose estimation results and the second pose estimation result each include data indicating main body parts of the person.
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15.
公开(公告)号:US20230143124A1
公开(公告)日:2023-05-11
申请号:US17861577
申请日:2022-07-11
Inventor: Changsoo LEE , Sangwoon LEE , Yongsung KIM , Jinhong KIM , Hyungjun KIM , Jooho LEE
IPC: H01L49/02 , H01L27/108 , H01G4/008
CPC classification number: H01L28/55 , H01L27/10852 , H01G4/008 , H01L28/75
Abstract: A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrxTiyO3 in which a content of Ti is greater than a content of Sr.
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公开(公告)号:US20230022629A1
公开(公告)日:2023-01-26
申请号:US17702155
申请日:2022-03-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Boeun PARK , Yongsung KIM , Jeonggyu SONG , Jooho LEE
IPC: H01L49/02 , H01L27/11502
Abstract: An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.
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公开(公告)号:US20220406884A1
公开(公告)日:2022-12-22
申请号:US17844896
申请日:2022-06-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyungjun KIM , Changsoo LEE , Yong-Hee CHO , Yongsung KIM , Jooho LEE
IPC: H01L49/02 , H01L27/108
Abstract: Provided are a thin film structure, a capacitor including the thin film structure, a semiconductor device including the thin film structure, and a method of manufacturing the thin film structure, in which the thin film structure may include: a first electrode thin film disposed on a substrate and including a first perovskite-based oxide; and a protective film disposed on the first electrode thin film and including a second perovskite-based oxide that is oxygen-deficient and includes a doping element. The thin film structure may prevent the deterioration of conductivity and a crystalline structure of a perovskite-based oxide electrode, which is a lower electrode, even in a high-temperature oxidizing atmosphere for subsequent dielectric film deposition.
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公开(公告)号:US20220375032A1
公开(公告)日:2022-11-24
申请号:US17745192
申请日:2022-05-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Daehyun BAN , Yongsung KIM , Dongwan LEE , Juyoung LEE
Abstract: A method of operating an image processing apparatus is provided. The method includes generating a first feature map by performing a convolution operation between a first image and a first kernel group, generating a second feature map by performing a convolution operation between the first image and a second kernel group, generating a first combination map based on the first feature map, generating a second combination map based on the first feature map and the second feature map, generating a second image based on the first combination map and the second combination map, and generating a reconstructed image of the first image, based on the second image and the first image, and generating a high-resolution image of the first image by inputting the reconstructed image to an upscaling model.
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公开(公告)号:US20210183993A1
公开(公告)日:2021-06-17
申请号:US16895362
申请日:2020-06-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Haeryong KIM , Jungmin PARK , Yongsung KIM , Jooho LEE
IPC: H01L49/02 , H01L29/51 , H01L21/02 , H01L29/78 , H01L27/108
Abstract: Provided are a film structure including hafnium oxide, an electronic device including the same, and a method of manufacturing the same. The film structure including hafnium oxide includes a hafnium oxide layer including hafnium oxide crystallized in a tetragonal phase, and first and second stressor layers apart from each other with the hafnium oxide layer therebetween and applying compressive stress to the hafnium oxide layer.
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公开(公告)号:US20190086579A1
公开(公告)日:2019-03-21
申请号:US16020434
申请日:2018-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaekwan KIM , Jeongyub LEE , Seunghoon HAN , Yongsung KIM , Byunghoon NA , Jangwoo YOU , Changseung LEE
Abstract: Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.
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