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公开(公告)号：US20150221326A1
公开(公告)日：2015-08-06
申请号：US14610771
申请日：2015-01-30
Applicant: Seagate Technology LLC
Inventor： Wonjoon Jung , Dimitar V. Dimitrov , Mark T. Kief
CPC classification number: G11B5/332 , G01R33/098 , G11B5/315 , G11B5/39 , G11B5/3906 , G11B5/3912 , H01L43/08 , H01L43/10
Abstract: A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.have a magnetic stack configured without a fixed magnetization structure and with a barrier layer disposed between first and second magnetically free layers. At least one magnetically free layer can be coupled to a magnetic shield by magnetic electrode and coupling layers with the coupling layer configured with at least a non-magnetic first coupling sub-layer disposed between a magnetic second coupling sub-layer and a magnetic third coupling sub-layer.
Abstract translation: 数据传感器可以配置有设置在第一和第二磁屏蔽之间的磁性堆叠。 磁性堆叠可以具有通过第一和第二电极叠层分别耦合到第一和第二磁屏蔽的第一和第二无磁性层叠之间的非磁性间隔层。 第一无磁性层压体可以具有由过渡金属材料构成的第一子层，并且设置在由负磁致伸缩材料构成的第二子层和由正磁致伸缩材料构成的第三子层之间。 具有构造成没有固定磁化结构并且阻挡层设置在第一和第二无磁层之间的磁性堆叠。 至少一个无磁性层可以通过磁电极和耦合层耦合到磁屏蔽，耦合层配置有至少一个非磁性第一耦合子层，该非磁性第一耦合子层设置在磁性第二耦合子层和磁性第三耦合 子层。
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公开(公告)号：US08675401B2
公开(公告)日：2014-03-18
申请号：US13847135
申请日：2013-03-19
Applicant: Seagate Technology LLC
Inventor： Hai Li , Yiran Chen , Hongyue Liu , Kang Yong Kim , Dimitar V. Dimitrov , Henry F. Huang
IPC: G11C11/00
CPC classification number: G11C11/1673 , G11C7/06 , G11C7/065 , G11C29/02 , G11C29/021 , G11C29/028 , G11C2029/5006 , Y10S977/933
Abstract: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.
Abstract translation: 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流，形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。
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公开(公告)号：US20130292784A1
公开(公告)日：2013-11-07
申请号：US13934998
申请日：2013-07-03
Applicant: Seagate Technology LLC
Inventor： Haiwen Xi , Yuankai Zheng , Xiaobin Wang , Dimitar V. Dimitrov , Pat J. Ryan
IPC: H01L43/02
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228
Abstract: An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.
Abstract translation: 一种用于增强对诸如非易失性数据存储阵列中的磁存储元件的数据写入和保持的装置和方法。 根据各种实施例，可编程存储元件具有参考层和存储层。 参考层具有固定的磁性取向。 存储层被编程为具有与所述固定磁性取向反平行的磁性取向的第一区域和具有与所述固定磁性取向平行的磁性取向的第二区域。 可以将热辅助层结合到存储元件中以增强存储层的局部加热，以帮助在写入操作期间第一区域从平行转变为反平行磁取向。
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公开(公告)号：US20130140659A1
公开(公告)日：2013-06-06
申请号：US13748815
申请日：2013-01-24
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yuankai Zheng , Dimitar V. Dimitrov
IPC: H01L29/82
CPC classification number: H01L29/82 , G11C11/16 , G11C11/161
Abstract: Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.
Abstract translation: 公开了具有镜面绝缘间隔物的磁通闭合自旋转移转矩存储器。 磁通闭合自旋转移转矩存储单元包括多层自由磁性元件，其包括通过电绝缘和电子反射层反铁磁耦合到第二自由磁性层的第一自由磁性层。 电绝缘和非磁性隧道势垒层将自由磁性元件与参考磁性层分离。
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公开(公告)号：US20190051319A1
公开(公告)日：2019-02-14
申请号：US16160661
申请日：2018-10-15
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Justin Brons , Tong Zhao , Yuhang Cheng , Dimitar V. Dimitrov
CPC classification number: G11B5/314 , G11B5/3133 , G11B2005/0021
Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.
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Patent Agency Ranking
公开(公告)号：US10054649B2
公开(公告)日：2018-08-21
申请号：US15238354
申请日：2016-08-16
Applicant: Seagate Technology, LLC
Inventor： Eric W. Singleton , Qing He , Jae-Young Yi , Matt Johnson , Zheng Gao , Dimitar V. Dimitrov , Song S. Xue
CPC classification number: G01R33/0052 , B82Y25/00 , G01R33/0076 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398
Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.
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公开(公告)号：US09293159B2
公开(公告)日：2016-03-22
申请号：US14610771
申请日：2015-01-30
Applicant: Seagate Technology LLC
Inventor： Wonjoon Jung , Dimitar V. Dimitrov , Mark T. Kief
CPC classification number: G11B5/332 , G01R33/098 , G11B5/315 , G11B5/39 , G11B5/3906 , G11B5/3912 , H01L43/08 , H01L43/10
Abstract: A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.
Abstract translation: 数据传感器可以配置有设置在第一和第二磁屏蔽之间的磁性堆叠。 磁性堆叠可以具有通过第一和第二电极叠层分别耦合到第一和第二磁屏蔽的第一和第二无磁性层叠之间的非磁性间隔层。 第一无磁性层压体可以具有由过渡金属材料构成的第一子层，并且设置在由负磁致伸缩材料构成的第二子层和由正磁致伸缩材料构成的第三子层之间。
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公开(公告)号：US08687413B2
公开(公告)日：2014-04-01
申请号：US13779903
申请日：2013-02-28
Applicant: Seagate Technology LLC
Inventor： Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov , Dexin Wang
IPC: G11C11/00
CPC classification number: H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.
Abstract translation: 磁存储器单元包括分隔自由磁性元件和参考磁性元件的隧道势垒。 第一声子玻璃电子晶体层设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧。 第二声子玻璃电子晶体层也设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧上，以在自由磁性元件和参考磁性元件上提供珀尔帖效应。
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公开(公告)号：US20130188420A1
公开(公告)日：2013-07-25
申请号：US13788695
申请日：2013-03-07
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yiran Chen , Hai Li , Hongyue Liu , Ran Wang , Dimitar V. Dimitrov
IPC: G11C11/16
CPC classification number: G11C11/1673 , G11C11/1693
Abstract: A non-destructive self-reference spin-transfer torque memory unit is disclosed.
Abstract translation: 公开了一种非破坏性的自参考自旋转移转矩存储单元。
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公开(公告)号：US20130175647A1
公开(公告)日：2013-07-11
申请号：US13779903
申请日：2013-02-28
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov , Dexin Wang
IPC: H01L43/02
CPC classification number: H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.
Abstract translation: 磁存储器单元包括分隔自由磁性元件和参考磁性元件的隧道势垒。 第一声子玻璃电子晶体层设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧。 第二声子玻璃电子晶体层也设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧上，以在自由磁性元件和参考磁性元件上提供珀尔帖效应。
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