公开(公告)号：US10102872B2

公开(公告)日：2018-10-16

申请号：US15073396

申请日：2016-03-17

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Justin Brons ,  Tong Zhao ,  Yuhang Cheng ,  Dimitar V. Dimitrov

IPC: G11B5/31 ,  G11B5/00

Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.

公开(公告)号：US09041083B2

公开(公告)日：2015-05-26

申请号：US13748815

申请日：2013-01-24

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yuankai Zheng ,  Dimitar V. Dimitrov

IPC: H01L21/02 ,  H01L29/82 ,  G11C11/16

CPC classification number: H01L29/82 ,  G11C11/16 ,  G11C11/161

Abstract: Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.

Abstract translation: 公开了具有镜面绝缘间隔物的磁通闭合自旋转移转矩存储器。 磁通闭合自旋转移转矩存储单元包括多层自由磁性元件，其包括通过电绝缘和电子反射层反铁磁耦合到第二自由磁性层的第一自由磁性层。 电绝缘和非磁性隧道势垒层将自由磁性元件与参考磁性层分离。

公开(公告)号：US08908429B2

公开(公告)日：2014-12-09

申请号：US13784230

申请日：2013-03-04

Applicant: Seagate Technology LLC

Inventor： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

Abstract translation: 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

公开(公告)号：US08681541B2

公开(公告)日：2014-03-25

申请号：US13966361

申请日：2013-08-14

Applicant: Seagate Technology LLC

Inventor： Yong Lu ,  Hongyue Liu ,  Zheng Gao ,  Insik Jin ,  Dimitar V. Dimitrov

IPC: G11C11/14

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

Abstract translation: 公开了具有分离的读和写路径的磁存储器。 磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有 自由磁化方向。 第一磁化取向与第二磁化取向相反。 隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。 位线电耦合到第二端部。 源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。

公开(公告)号：US08681539B2

公开(公告)日：2014-03-25

申请号：US13862611

申请日：2013-04-15

Applicant: Seagate Technology LLC

Inventor： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Kaizhong Gao ,  Olle Heinonen ,  Wenzhong Zhu

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

Abstract: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.

Abstract translation: 自旋转矩存储器包括复合自由磁性元件，具有沿参考方向固定的磁化取向的参考磁性元件以及将复合自由磁性元件与磁性参考元件分离的电绝缘和非磁性隧道势垒层 。 自由磁性元件包括与软磁性层交换的硬磁性层。 复合自由磁性元件具有当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向。

公开(公告)号：US08780619B2

公开(公告)日：2014-07-15

申请号：US13934998

申请日：2013-07-03

Applicant: Seagate Technology LLC

Inventor： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

IPC: G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

Abstract: An apparatus and method for storing data in a semiconductor memory. In accordance with some embodiments, the semiconductor memory has a continuous storage layer of soft ferromagnetic material having opposing top and bottom surfaces with overall length and width dimensions and an overall thickness dimension between the opposing top and bottom surfaces. A plurality of spaced apart, discrete reference layers are adjacent a selected one of the opposing top or bottom surfaces of the continuous storage layer with each having a fixed magnetic orientation. A plurality of spaced apart, discrete barrier layers are disposed in contacting relation between the discrete reference layers and the continuous storage layer.

Abstract translation: 一种用于在半导体存储器中存储数据的装置和方法。 根据一些实施例，半导体存储器具有软铁磁材料的连续存储层，其具有相对的顶部和底部表面，其整体长度和宽度尺寸以及相对的顶部和底部表面之间的整体厚度尺寸。 多个间隔开的离散参考层与连续存储层的相对的顶表面或底表面中的所选择的一个相邻，每个具有固定的磁取向。 多个间隔开的离散阻挡层以离散参考层和连续存储层之间的接触关系设置。

公开(公告)号：US20140015075A1

公开(公告)日：2014-01-16

申请号：US13966361

申请日：2013-08-14

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yong Lu ,  Hongyue Liu ,  Zheng Gao ,  Insik Jin ,  Dimitar V. Dimitrov

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

Abstract translation: 公开了具有分离的读和写路径的磁存储器。 磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有 自由磁化方向。 第一磁化取向与第二磁化取向相反。 隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。 位线电耦合到第二端部。 源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。

公开(公告)号：US10580439B2

公开(公告)日：2020-03-03

申请号：US16160661

申请日：2018-10-15

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Justin Brons ,  Tong Zhao ,  Yuhang Cheng ,  Dimitar V. Dimitrov

IPC: G11B5/31 ,  G11B5/00

Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.

公开(公告)号：US09685202B1

公开(公告)日：2017-06-20

申请号：US15002663

申请日：2016-01-21

Applicant: Seagate Technology LLC

Inventor： John Charles Duda ,  Scott M. Franzen ,  Weibin Chen ,  Tae-Woo Lee ,  Dimitar V. Dimitrov ,  Huaqing Yin

IPC: G11B11/00 ,  G11B33/14 ,  G11B5/012 ,  G11B5/187 ,  G11B5/127 ,  G11B5/00 ,  G11B11/105 ,  G11B5/31 ,  G11B5/60

CPC classification number: G11B33/1426 ,  G11B5/012 ,  G11B5/1272 ,  G11B5/187 ,  G11B5/3106 ,  G11B5/3136 ,  G11B5/314 ,  G11B5/6088 ,  G11B11/10532 ,  G11B11/10543 ,  G11B11/10554 ,  G11B2005/0021

Abstract: A near-field transducer includes an enlarged portion and a peg protruding from a first edge. The enlarged portion has a second edge facing away from the first edge. The near-field transducer includes a heat sink disposed on the enlarged portion and with an outline shape that matches that of the enlarged portion. The heat sink is disposed at a first separation distance from the first edge of the enlarged portion and a second, greater, separation distance from the second edge of the enlarged portion. The first separation distance is greater than the second separation distance.

公开(公告)号：US20160284365A1

公开(公告)日：2016-09-29

申请号：US15073396

申请日：2016-03-17

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Justin Brons ,  Tong Zhao ,  Yuhang Cheng ,  Dimitar V. Dimitrov

IPC: G11B5/147

CPC classification number: G11B5/314 ,  G11B5/3133 ,  G11B2005/0021

Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.

Abstract translation: 包括近场换能器（NFT）的装置，所述NFT具有至少一个外表面; 以及位于所述至少一个外表面的至少一部分上的至少一个多层粘合层，所述多层粘合层包括第一层和第二层，所述第二层与所述至少一个外部表面的所述部分接触 第一层包括：钇（Y），钪（Sc），锆（Zr），铪（Hf），硅（Si），硼（B），钽（Ta），钡（Ba） 铝（Al），钛（Ti），铌（Nb），钙（Ca），铍（Be），锶（Sr），镁（Mg），锂（Li） 第二层包括：镧（La），硼（B），镥（Lu），铝（Al），氘（D），铈（Ce），铀（U），镨（Pr） ，硅（Si），铱（Ir），碳（C），钍（Th），钪（Sc），钛（Ti），钒（V），磷（P），钡（Ba） ，或其组合。