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公开(公告)号：US10564119B2
公开(公告)日：2020-02-18
申请号：US15886685
申请日：2018-02-01
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： David S. Kuo , ShuaiGang Xiao , Kim Yang Lee , Xiaomin Yang , Koichi Wago , Thomas Young Chang
IPC: G01N27/327 , G01N33/487 , B82Y40/00 , G01N33/543 , C12Q1/6869 , B82Y5/00
Abstract: A DNA sequencing device includes a first layer having a nanochannel formed therein, and a pair of electrodes arranged vertically relative to each other and spaced apart to define an electrode gap. The electrode gap is exposed in the nanochannel, and the electrode gap is in the range of about 0.3 nm to about 2 nm.
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公开(公告)号：US10310182B2
公开(公告)日：2019-06-04
申请号：US14055773
申请日：2013-10-16
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Ganping Ju , Chubing Peng , Xiaobin Zhu , Yingguo Peng , Yukiko Kubota , Timothy J Klemmer , Jan-Ulrich Thiele , Michael A. Seigler , Werner Scholz , Kim Y. Lee , David S. Kuo , Koichi Wago
IPC: G02B6/122
Abstract: The embodiments disclose a stack feature of a stack configured to confine optical fields within and to a patterned plasmonic underlayer in the stack configured to guide light from a light source to regulate optical coupling.
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公开(公告)号：US09799362B1
公开(公告)日：2017-10-24
申请号：US15165615
申请日：2016-05-26
Applicant: Seagate Technology LLC
Inventor： Kim Yang Lee , Thomas P. Nolan , Philip L. Steiner , Thomas Y. Chang , Koichi Wago
CPC classification number: G11B5/66 , G11B5/746 , G11B5/855 , G11B2005/0021 , G11B2005/0024
Abstract: A three dimensional magnetic recording medium can consist of a first recording layer vertically stacked with a second recording layer. The first stacked recording layer may be tuned with at least one discrete track physically separating multiple data tracks in the first recording layer or tuned by being configured as a bit patterned media.
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公开(公告)号：US20170125049A1
公开(公告)日：2017-05-04
申请号：US15403040
申请日：2017-01-10
Applicant: Seagate Technology LLC
Inventor： Shuaigang Xiao , David S. Kuo , XiaoMin Yang , Kim Y. Lee , Yautzong Hsu , Koichi Wago
CPC classification number: G11B5/59638 , G11B5/59655 , G11B5/746 , G11B5/84 , G11B5/855 , G11B20/1217 , G11B2020/1281
Abstract: Provided herein is a method, including creating a first pattern in a data region of a substrate, and creating a second pattern in a servo region of a substrate. A circumferential line pattern is created overlapping the first pattern to create rectangle-shaped protrusions in the data region of the substrate. A chevron pattern is created overlapping the second pattern to create chevron-derived protrusions in the servo region of the substrate.
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公开(公告)号：US09620161B2
公开(公告)日：2017-04-11
申请号：US14824995
申请日：2015-04-16
Applicant: Seagate Technology LLC
Inventor： Shuaigang Xiao , David S. Kuo , XiaoMin Yang , Kim Y. Lee , Yautzong Hsu , Koichi Wago
CPC classification number: G11B5/59638 , G11B5/59655 , G11B5/746 , G11B5/84 , G11B5/855 , G11B20/1217 , G11B2020/1281
Abstract: Provided herein is an apparatus, including a first region of a substrate corresponding to a data region in a patterned recording medium; a first set of protrusions etched out of the first region of the substrate, wherein the protrusions of the first set of protrusions are rectangle shaped; a second region of the substrate corresponding to a servo region in a patterned recording medium; and a second set of protrusions etched out of the second region of the substrate, wherein the second set of protrusions includes radial lines etched into the substrate across chevrons etched out of the substrate.
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Patent Agency Ranking
公开(公告)号：US20160265119A1
公开(公告)日：2016-09-15
申请号：US15163214
申请日：2016-05-24
Applicant: Seagate Technology LLC
Inventor： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
CPC classification number: C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
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公开(公告)号：US09370907B2
公开(公告)日：2016-06-21
申请号：US14221165
申请日：2014-03-20
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
CPC classification number: C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
Abstract translation: 本文提供了一种包括基板的装置; 覆盖衬底的蚀刻停止层，其中蚀刻停止层基本上抵抗蚀刻条件; 以及覆盖在蚀刻停止层上的图案层，其中所述图案化层对于蚀刻条件基本不稳定，并且其中所述图案化层包括多个特征，所述特征包括高特征密度区域和低特征密度区域之间的基本一致的特征轮廓。
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18.发明申请METHOD OF FABRICATING ION IMPLANTATION MAGNETICALLY AND THERMALLY ISOLATED BITS IN HAMR BPM STACKS 审中-公开在HAMR BPM堆栈中制造离子植入磁性和热隔离位的方法公开(公告)号：US20140370331A1
公开(公告)日：2014-12-18
申请号：US14158704
申请日：2014-01-17
Applicant: Seagate Technology LLC
Inventor： Sunnie H. N. Lim , Koichi Wago
CPC classification number: G11B5/855
Abstract: The embodiments disclose a continuous thin film magnetic layer and a patterned hard mask layer configured to be deposited onto the continuous thin film magnetic layer and to have plural ion implantations, wherein the ion implantations are configured to create chemically and structurally altered localized magnetic regions unprotected by the patterned hard mask layer.
Abstract translation: 实施例公开了连续的薄膜磁性层和被构造成沉积在连续薄膜磁性层上并且具有多个离子注入的图案化的硬掩模层，其中离子注入被配置成产生化学和结构上改变的局部磁区，不受 图案化的硬掩模层。
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公开(公告)号：US09683295B2
公开(公告)日：2017-06-20
申请号：US15163214
申请日：2016-05-24
Applicant: Seagate Technology LLC
Inventor： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
IPC: H01L21/00 , C23F1/00 , B29C33/38 , G03F7/00 , B29D17/00 , G11B5/855 , G03F7/20 , G03F7/09 , B29K101/00
CPC classification number: C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
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公开(公告)号：US09605348B2
公开(公告)日：2017-03-28
申请号：US15161097
申请日：2016-05-20
Applicant: Seagate Technology LLC
Inventor： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
IPC: H01L21/00 , C23F1/00 , B29C33/38 , G03F7/00 , B29D17/00 , G11B5/855 , G03F7/20 , G03F7/09 , B29K101/00
CPC classification number: C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
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