公开(公告)号：US11136624B2

公开(公告)日：2021-10-05

申请号：US16862314

申请日：2020-04-29

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Kim Yang Lee ,  David S. Kuo ,  Thomas Young Chang ,  Xiaomin Yang ,  ShuaiGang Xiao ,  Koichi Wago

IPC: C12Q1/6874 ,  G01N33/487 ,  G01N27/447 ,  C12Q1/6869

Abstract: A DNA sequencing device, and related methods, include a nanochannel sized to receive a DNA strand, a first electrode member exposed within the nanochannel, and a second electrode member exposed within the nanochannel and spaced apart from the first electrode to form an electrode gap. The second electrode member has a wedge shaped profile, and the first and second electrode members are operable to detect a change in electronic signal as the DNA strand passes through the electrode gap.

公开(公告)号：US09934806B2

公开(公告)日：2018-04-03

申请号：US15403040

申请日：2017-01-10

Applicant: Seagate Technology LLC

Inventor： Shuaigang Xiao ,  David S. Kuo ,  XiaoMin Yang ,  Kim Y. Lee ,  Yautzong Hsu ,  Koichi Wago

IPC: G11B5/596 ,  G11B20/12

CPC classification number: G11B5/59638 ,  G11B5/59655 ,  G11B5/746 ,  G11B5/84 ,  G11B5/855 ,  G11B20/1217 ,  G11B2020/1281

Abstract: Provided herein is a method, including creating a first pattern in a data region of a substrate, and creating a second pattern in a servo region of a substrate. A circumferential line pattern is created overlapping the first pattern to create rectangle-shaped protrusions in the data region of the substrate. A chevron pattern is created overlapping the second pattern to create chevron-derived protrusions in the servo region of the substrate.

公开(公告)号：US20160266493A1

公开(公告)日：2016-09-15

申请号：US15161097

申请日：2016-05-20

Applicant: Seagate Technology LLC

Inventor： Michael R. Feldbaum ,  Koichi Wago ,  Gennady Gauzner ,  Kim Y. Lee ,  David S. Kuo

IPC: G03F7/09

CPC classification number: C23F1/00 ,  B29C33/3842 ,  B29D17/00 ,  B29K2101/00 ,  B29K2909/00 ,  G03F7/0002 ,  G03F7/0017 ,  G03F7/09 ,  G03F7/2002 ,  G11B5/855 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/24917

Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.

公开(公告)号：US09299380B2

公开(公告)日：2016-03-29

申请号：US14062776

申请日：2013-10-24

Applicant: Seagate Technology LLC

Inventor： Michael R. Feldbaum ,  Koichi Wago ,  Bin Lu ,  David S. Kuo

IPC: B44C1/22 ,  G11B5/74 ,  G11B5/855 ,  H01F41/34 ,  H01F10/12

CPC classification number: G11B5/746 ,  G11B5/855 ,  H01F10/123 ,  H01F41/34

Abstract: Provided herein is a method including oxidizing tops of features of a patterned magnetic layer to form oxidized tops of the features; removing an excess of an applied first protective material down to at least the oxidized tops of the features to form a planarized layer; and applying a second protective material over the planarized layer.

Abstract translation: 本文提供了一种方法，包括使图案化磁性层的特征的顶部氧化以形成特征的氧化顶部; 将过量的所施加的第一保护材料除去至少所述特征的氧化顶部以形成平坦化层; 以及在所述平坦化层上施加第二保护材料。

公开(公告)号：US09181618B2

公开(公告)日：2015-11-10

申请号：US14635847

申请日：2015-03-02

Applicant: Seagate Technology LLC

Inventor： Michael Feldbaum ,  Koichi Wago ,  David Kuo

IPC: C23C14/48 ,  G11B5/84 ,  G11B5/855 ,  C23C14/06 ,  C23C14/08

CPC classification number: C23C14/48 ,  C23C14/0605 ,  C23C14/08 ,  G11B5/84 ,  G11B5/8408 ,  G11B5/855 ,  Y10T428/24612

Abstract: Provided herein is a method including conformally depositing a first layer over a patterned resist; depositing a second, thicker layer over the first layer; etching the second layer to expose the first layer; and patterning a magnetic layer by ion implantation in accordance with the patterned resist to form a patterned magnet layer.

Abstract translation: 本文提供了一种方法，包括在图案化的抗蚀剂上共形沉积第一层; 在第一层上沉积第二较厚的层; 蚀刻第二层以暴露第一层; 以及通过根据图案化的抗蚀剂的离子注入构图磁性层以形成图案化磁体层。

公开(公告)号：US20150294680A1

公开(公告)日：2015-10-15

申请号：US14251303

申请日：2014-04-11

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： XiaoMin Yang ,  Shuaigang Xiao ,  Kim Y. Lee ,  Koichi Wago ,  Philip Steiner

IPC: G11B5/84

CPC classification number: G11B5/746 ,  G03F7/0002 ,  G11B5/855

Abstract: The embodiments disclose a method including patterning a template substrate to have different densities using hierarchical block copolymer density patterns in different zones including a first pattern and a second pattern, using a first directed self-assembly to pattern a first zone in the substrate using a first block copolymer material, and using a second directed self-assembly to pattern a second zone in the substrate using a second block copolymer material.

Abstract translation: 实施方案公开了一种方法，其包括使用第一定向自组装使用第一和第二图案在第一图案和第二图案中分层嵌段共聚物密度图案在不同区域中图案化模板基底以具有不同的密度，以使用第一 嵌段共聚物材料，并且使用第二定向自组装来使用第二嵌段共聚物材料在基材中图案化第二区域。

公开(公告)号：US20150017482A1

公开(公告)日：2015-01-15

申请号：US14055799

申请日：2013-10-16

Applicant: Seagate Technology LLC

Inventor： Kim Y. Lee ,  Ganping Ju ,  Chubing Peng ,  Xiaobin Zhu ,  Yingguo Peng ,  Yukiko A. Kubota ,  Timothy J. Klemmer ,  Jan-Ulrich Thiele ,  Michael A. Seigler ,  Werner Scholz ,  David S. Kuo ,  Koichi Wago ,  Thomas P. Nolan

IPC: G11B5/72 ,  G11B5/74 ,  G11B5/84

CPC classification number: G11B5/746 ,  G11B5/855

Abstract: The embodiments disclose a plasmonic cladding structure including at least one conformal plasmonic cladding structure wrapped around plural stack features of a recording device, wherein the conformal plasmonic cladding structure is configured to create a near-field transducer in close proximity to a recording head of the recording device, at least one conformal plasmonic cladding structure with substantially removed top surfaces of the stack features with exposed magnetic layer materials and a thermally insulating filler configured to be located between the stack features.

Abstract translation: 这些实施例公开了一种等离子体激元包层结构，其包括缠绕在记录装置的多个堆叠特征上的至少一个共形等离子体激元包层结构，其中该共形等离子体激元包层结构被配置为在接近记录头的记录头处产生近场换能器 至少一个保形等离子体激元包层结构，其具有暴露的磁性层材料的堆叠特征的基本上去除的顶表面，以及被配置为位于堆叠特征之间的隔热填料。

公开(公告)号：US20200377939A1

公开(公告)日：2020-12-03

申请号：US16909827

申请日：2020-06-23

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Kim Yang Lee ,  Thomas Young Chang ,  David S. Kuo ,  ShuaiGang Xiao ,  Xiaomin Yang ,  Koichi Wago

IPC: C12Q1/6869 ,  G01N27/327 ,  B81C1/00 ,  G01N27/447 ,  B01L3/00

Abstract: A DNA sequencing device and related methods, wherein the device includes a substrate, a nanochannel formed in the substrate, a first electrode positioned on a first side of the nanochannel, and a second electrode. The second electrode is positioned on a second side of the nanochannel opposite the first electrode and is spaced apart from the first electrode to form an electrode gap that is exposed in the nanochannel. At least a portion of first electrode is movable relative to the second electrode to decrease a size of the electrode gap.

公开(公告)号：US10761058B2

公开(公告)日：2020-09-01

申请号：US15886608

申请日：2018-02-01

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Thomas Young Chang ,  David S. Kuo ,  Kim Yang Lee ,  Koichi Wago

IPC: G01N27/447 ,  B01L3/00 ,  G01N33/487 ,  C12Q1/6869 ,  B82Y15/00 ,  B82Y30/00

Abstract: A DNA sequencing device, and related method, which include an electrode and a plurality of spaced apart alignment structures. The electrode defines an electrode gap, the electrode being operable to detect a change in tunneling current as a DNA strand passes through the electrode gap. The plurality of spaced apart alignment structures are arranged to position nucleotides of the DNA strand in a predetermined orientation as the DNA strand passes through the electrode gap.

公开(公告)号：US10655164B2

公开(公告)日：2020-05-19

申请号：US15886442

申请日：2018-02-01

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Koichi Wago ,  ShuaiGang Xiao ,  Xiaomin Yang ,  Kim Yang Lee ,  David S. Kuo ,  Thomas Young Chang

IPC: G01N27/327 ,  C12Q1/6825 ,  C12Q1/6874 ,  G01N27/447 ,  B01L3/00 ,  C12Q1/6837 ,  G01N27/414 ,  C12Q1/6806 ,  G01N33/487 ,  C12Q1/6869

Abstract: Apparatus and methods to sequence DNA. A DNA sequencing device includes a passage, a first electrode, and a second electrode. The passage has a width and a length. The first and second electrodes are exposed within the passage and spaced apart from each other to form an electrode gap. The electrode gap is no greater than about 2 nm. The DNA sequencing device is operable to measure with the first and second electrodes a change in electronic signal in response to nucleotides of a DNA strand passing through the electrode gap.