公开(公告)号：US20040040583A1

公开(公告)日：2004-03-04

申请号：US10654849

申请日：2003-09-04

Applicant: Semitool, Inc.

Inventor： Ronald G. Breese ,  Dana R. Scranton ,  Eric J. Bergman ,  Michael E. Bartkoski ,  Cobby S. Grove

IPC: F23J001/00

CPC classification number: H01L21/02054 ,  B01D53/86 ,  B01D2257/106 ,  B08B3/02 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/67017 ,  H01L21/6704

Abstract: A workpiece processing system for processing semiconductor wafers and other flat media includes a standalone processing unit having two or more modules vertically stacked on top of one another. A first module includes an ozone generator, a DI water supply, a purge gas/drying gas supply, and optionally includes an ammonium hydroxide generator. A second module is preferably stacked on top of the first module and includes a processing chamber in communication with the devices in the first module. The processing chamber preferably includes a rotor for holding and rotating workpieces, one or more spray manifolds, an ozone destructor, an anti-static generator, and/or any other suitable workpiece-processing devices. The rotor is preferably designed to hold two workpiece-carrying cassettes each capable of holding up to 25 workpieces. A third module is preferably stacked on top of the second module and includes the system electronics and controls.

Abstract translation: 用于处理半导体晶片和其它平面介质的工件处理系统包括具有彼此垂直堆叠的两个或更多个模块的独立处理单元。 第一模块包括臭氧发生器，去离子水供应源，净化气体/干燥气体源，并且任选地包括氢氧化铵发生器。 第二模块优选堆叠在第一模块的顶部上，并且包括与第一模块中的装置通信的处理室。 处理室优选地包括用于保持和旋转工件的转子，一个或多个喷雾歧管，臭氧破坏器，防静电发生器和/或任何其它合适的工件加工装置。 转子优选地设计成容纳两个能够容纳多达25个工件的工件运载盒。 第三模块优选地堆叠在第二模块的顶部并且包括系统电子装置和控制。

公开(公告)号：US20030234029A1

公开(公告)日：2003-12-25

申请号：US10608789

申请日：2003-06-26

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman

IPC: B08B007/04 ,  B08B003/12

CPC classification number: H01L21/67028 ,  B08B3/045 ,  B08B3/048 ,  B08B3/102 ,  B08B3/12 ,  B08B11/02 ,  C03C23/0075 ,  C11D11/007 ,  H01L21/67051 ,  H01L21/67057

Abstract: A method of processing a semiconductor workpiece, wherein sonic agitation is applied to the workpiece during a Marangoni drying or surface tension gradient drying step. Sonic agitation is applied to the workpiece as it is withdrawn from an aqueous liquid in a process vessel, or as the aqueous liquid is drained from the process vessel. As a result, the cleaning and drying steps are performed simultaneously as a single comprehensive process, which enhances workpiece cleaning while reducing processing times, chemical volumes, and overall costs.

Abstract translation: 一种处理半导体工件的方法，其中在马兰戈尼干燥或表面张力梯度干燥步骤期间，对工件施加声波搅拌。 当工件从处理容器中的水性液体中取出时，或者当处理容器中排出水性液体时，对工件施加声波搅拌。 因此，清洁和干燥步骤作为单一综合处理同时进行，这增强了工件清洁，同时减少了处理时间，化学物质量和总体成本。

公开(公告)号：US20030088995A1

公开(公告)日：2003-05-15

申请号：US10334457

申请日：2002-12-30

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman ,  Ian Sharp ,  Craig P. Meuchel ,  H. Frederick Woods

IPC: F26B005/04

CPC classification number: H01L21/67034 ,  H01L21/67028 ,  H01L21/67057 ,  H01L21/67772 ,  H01L21/67775

Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract translation: 用于半导体晶片的高压干燥的系统包括将晶片插入开放容器中，将晶片浸入液体中，对容器进行加压密封，用惰性气体加压容器，然后控制 使用从保持在气 - 液界面正下方的深度提取水的可移动排水来排出液体。 此后，可以在容器中降低压力，并且可以除去干燥和干净的晶片。 高压抑制液体的沸点，从而允许使用较高的温度来优化反应性。 超声波与加压流体一起使用，以提高清洁性能。 超临界物质设置在含有晶片的密封容器中以促进清洁和其它处理。

公开(公告)号：US20010017143A1

公开(公告)日：2001-08-30

申请号：US09836080

申请日：2001-04-16

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman

IPC: B08B007/04

CPC classification number: H01L21/02054 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2230/01 ,  Y10S134/902 ,  Y10S438/906

Abstract: The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

Abstract translation: 本发明包括用于清洁晶片或其它半导体产品表面的方法。 使用被润湿到表面上的氧化溶液进行氧化。 氧化溶液可以包括水，臭氧，氯化氢，硫酸或过氧化氢中的一种或多种。 漂洗步骤除去氧化溶液并抑制进一步的活性​​。 此后，漂洗后的表面优选进行干燥步骤。 将表面暴露于氧化物去除蒸气以从其中除去半导体氧化物。 氧化物去除蒸气可以包括一种或多种：酸，例如卤化氢，例如氟化氢或氯化氢; 水; 异丙醇 或臭氧。 这些工艺可以使用离心加工和喷涂动作。

公开(公告)号：US20040221877A1

公开(公告)日：2004-11-11

申请号：US10870173

申请日：2004-06-18

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman

IPC: B08B003/00

CPC classification number: H01L21/02054 ,  B08B3/00 ,  B08B3/02 ,  B08B3/044 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2203/007 ,  B08B2203/0288 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/67017 ,  H01L21/6704 ,  H01L21/67051 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K3/3426 ,  Y02P70/613 ,  Y10S134/902 ,  H01L2924/00

Abstract: In a method and apparatus for cleaning or processing a workpiece, a process gas is brought into contact with the workpiece by diffusion through a heated liquid layer on the workpiece, and by bulk transport achieved by entraining the gas in a liquid stream, spray or jet impinging on the workpiece. The process gas, which may be ozone, is entrained in the liquid via entrainment nozzles. Use of entrainment and diffusion together increases the amount of gas available for reaction at the workpiece surface, increases the reaction rate, and decreases required process times.

Abstract translation: 在用于清洁或处理工件的方法和装置中，工艺气体通过扩散通过工件上的加热液体层与工件接触，并且通过将气体夹带在液体流中，喷射或射流 撞击工件。 可能是臭氧的工艺气体通过夹带喷嘴夹带在液体中。 夹带和扩散的使用一起增加了可在工件表面反应的气体的量，增加了反应速率，并减少了所需的处理时间。

公开(公告)号：US20040069320A1

公开(公告)日：2004-04-15

申请号：US10681553

申请日：2003-10-07

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman

IPC: B08B007/04 ,  B08B007/00 ,  B08B003/00

CPC classification number: H01L21/02054 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2230/01 ,  Y10S134/902 ,  Y10S438/906

Abstract: The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

公开(公告)号：US20040025901A1

公开(公告)日：2004-02-12

申请号：US10631378

申请日：2003-07-30

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman ,  Jeffrey J. Dennison ,  David P. Surdock

IPC: B08B003/12

CPC classification number: H01L21/67057 ,  B08B3/045 ,  B08B3/12

Abstract: A system and method for processing a workpiece, such as a semiconductor wafer, includes a spray mechanism that rotates around the workpiece while the workpiece rests on a stationary workpiece support in a process chamber. The spray mechanism preferably includes one or more spray arms attached to a motorized rotary union via hollow elbow sections. The rotary union is attached to a fluid supply valve and preferably includes a hollow shaft through which process fluid may travel from the fluid supply valve to the spray arms. The process chamber includes a drain through which process fluid may be removed from the process chamber. A process gas and/or vapor manifold, a sonic transducer, and/or a rinsing liquid manifold may be included in the process chamber for delivering a process gas or vapor, sonic energy, and/or a rinsing liquid into the process chamber in order to enhance processing of the workpiece.

Abstract translation: 用于处理诸如半导体晶片的工件的系统和方法包括在工件搁置在处理室中的固定工件支撑件上的情况下围绕工件旋转的喷射机构。 喷雾机构优选地包括通过空心弯头部分附接到电动旋转联接器的一个或多个喷射臂。 旋转联接器附接到流体供应阀，并且优选地包括中空轴，过程流体可以通过空心轴从流体供应阀行进到喷射臂。 处理室包括排出物，工序流体可以通过该排出物从处理室移除。 处理气体和/或蒸汽歧管，声音换能器和/或冲洗液体歧管可以包括在处理室中，用于将处理气体或蒸气，声能和/或冲洗液体按顺序输送到处理室 以加强工件的加工。

公开(公告)号：US20040020513A1

公开(公告)日：2004-02-05

申请号：US10631376

申请日：2003-07-30

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman

IPC: C23G001/00

CPC classification number: H01L21/6708 ,  B08B3/00 ,  B08B3/02 ,  B08B3/044 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2203/007 ,  B08B2230/01 ,  H01L21/3065 ,  H01L21/6704 ,  H01L21/67051 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K3/3426 ,  Y02P70/613 ,  Y10S134/902 ,  H01L2924/00

Abstract: A method of thinning a silicon wafer in a controllable cost-effective manner with minimal chemical consumption. The wafer is placed into a process chamber, after which ozone gas and HF vapor, are delivered into the process chamber to react with a silicon surface of the wafer. The ozone and HF vapor may be delivered sequentially, or may be mixed with one another before entering the process chamber. The ozone oxidizes the silicon surface of the wafer, while the HF vapor etches the oxidized silicon away from the wafer. The etched oxidized silicon is then removed from the process chamber. As a result, the wafer is thinned, which aids in preventing heat build-up in the wafer, and also makes the wafer easier to handle and cheaper to package. In alternative embodiments, HF may be delivered into the process chamber as an anhydrous gas or in aqueous form.

Abstract translation: 以最小的化学消耗以可控的成本有效的方式稀释硅晶片的方法。 将晶片放置在处理室中，之后将臭氧气体和HF蒸汽输送到处理室中以与晶片的硅表面反应。 可以顺序地输送臭氧和HF蒸气，或者可以在进入处理室之前彼此混合。 臭氧氧化晶片的硅表面，而HF蒸气将氧化的硅蚀刻离开晶片。 然后将蚀刻的氧化硅从处理室中取出。 结果，晶片变薄，这有助于防止晶片中的热积聚，并且还使晶片更容易处理并且更便宜的封装。 在替代实施例中，HF可以作为无水气体或以水的形式被输送到处理室中。

公开(公告)号：US20020026729A1

公开(公告)日：2002-03-07

申请号：US09924999

申请日：2001-08-07

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman ,  Ian Sharp ,  Craig P. Meuchel ,  H. Frederick Woods

IPC: F26B005/04

CPC classification number: H01L21/67034 ,  H01L21/67028 ,  H01L21/67057 ,  H01L21/67772 ,  H01L21/67775

Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

公开(公告)号：US20010027799A1

公开(公告)日：2001-10-11

申请号：US09836059

申请日：2001-04-16

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman

IPC: B08B003/02

CPC classification number: H01L21/02054 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2230/01 ,  Y10S134/902 ,  Y10S438/906

Abstract: The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or, ozone. The processes can use centrifugal processing and spraying actions.

Abstract translation: 本发明包括用于清洁晶片或其它半导体产品表面的方法。 使用被润湿到表面上的氧化溶液进行氧化。 氧化溶液可以包括水，臭氧，氯化氢，硫酸或过氧化氢中的一种或多种。 漂洗步骤除去氧化溶液并抑制进一步的活性​​。 此后，漂洗后的表面优选进行干燥步骤。 将表面暴露于氧化物去除蒸气以从其中除去半导体氧化物。 氧化物去除蒸气可以包括一种或多种：酸，例如卤化氢，例如氟化氢或氯化氢; 水; 异丙醇 或臭氧。 这些工艺可以使用离心加工和喷涂动作。